Publications

• Communication dans un congrès

Output power density higher than 1W/mm at 4GHz thanks to an original silicon LDEMOS transistor layout

D. Ducatteau, D. Fournier, G. Bekangba, P. Chevalier, Christophe Gaquière

5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.150-153. ⟨hal-00550007⟩

• Communication dans un congrès

A contribution to the characterization of the interference power in cognitive radio networks

B. Pijcke, Marie Zwingelstein, Marc G. Gazalet, M Gharbi, Patrick Corlay, François-Xavier Coudoux

3rd European Wireless Technology Conference, EuWiT 2010, 2010, Ville inconnue, France. pp.137-140. ⟨hal-00550030⟩

• Communication dans un congrès

A localization technique for LOS and NLOS scenario

P. Stefanut, D.P. Gaillot, A. Nasr, M. Lienard, Pierre Degauque

3rd European Wireless Technology Conference, EuWiT 2010, 2010, France. pp.121-124. ⟨hal-00550033⟩

• Article dans une revue

Electron beam nanolithography in AZnLOF 2020

E. Herth, P. Tilmant, M. Faucher, M. François, Christophe Boyaval, Francois Vaurette, Y. Deblock, Bernard Legrand, L. Buchaillot

Microelectronic Engineering, 2010, 87, pp.2057-2060. ⟨10.1016/j.mee.2009.12.079⟩. ⟨hal-00548989⟩

• Article dans une revue

Proposal and performance analysis of normally off n++ GaN/InAlN/AlN/GaN HEMTs with 1-nm-thick InAlN barrier

J. Kuzmik, C. Ostermaier, G. Pozzovivo, B. Basnar, W. Schrenk, J.F. Carlin, M. Gonschorek, E. Feltin, N. Grandjean, Y. Douvry, Christophe Gaquière, Jean-Claude de Jaeger, K. Cico, K. Frölich, J. Skriniarova, J. Kovacs, G. Strasser, D. Pogany, E. Gornik

IEEE Transactions on Electron Devices, 2010, 57, pp.2144-2154. ⟨10.1109/TED.2010.2055292⟩. ⟨hal-00549465⟩

• Article dans une revue

Optical response of resonator induced plasmon filters : nanometric diatomic structures

G.H. Cocoletzi, M.A. Palomino-Ovando, L. Dobrzynski, Bahram Djafari-Rouhani, Abdellatif Akjouj

Superlattices and Microstructures, 2010, 48, pp.380-387. ⟨10.1016/j.spmi.2010.07.011⟩. ⟨hal-00549441⟩

• Article dans une revue

A three-dimensional Monte Carlo model for the simulation of nanoelectronic devices

T. Sadi, Jean-Luc Thobel

We present a three-dimensional (3D) semi-classical ensemble Monte Carlo model newly developed to simulate a variety of nanoelectronic devices. The characteristics of the 3D model are compared with the widely used two-dimensional (2D) models. The advantages of our model, in terms of accuracy in…

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2010, 23, pp.200-214. ⟨10.1002/jnm.735⟩. ⟨hal-00549480⟩

• Communication dans un congrès

Influence of temperature on high frequency performance of graphene nano ribbon field effect

N. Meng, J.F. Fernandez, D. Vignaud, Gilles Dambrine, H. Happy

68th Device Research Conference, DRC 2010, 2010, United States. pp.69-70, ⟨10.1109/DRC.2010.5551934⟩. ⟨hal-00549925⟩

• Communication dans un congrès

Injection-locking of terahertz quantum cascade lasers up to 35GHz via RF amplitude modulation

P. Gellie, S. Barbieri, Jean-Francois Lampin, P. Filloux, C. Manquest, C. Sirtori, I. Sagnes, S.P. Khanna, E.H. Linfield, H.E. Beere, D.A. Ritchie

35th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2010, 2010, Italy. pp.1-2, ⟨10.1109/ICIMW.2010.5612807⟩. ⟨hal-00549949⟩

• Communication dans un congrès

THz plasmonic waves launchers for metamaterials studies

Tahsin Akalin, Willie J. Padilla

3rd Annual Winter Topical Meeting of the IEEE Photonics Society, WIN2010, Jan 2010, Majorca, Spain. pp.36-37. ⟨hal-00549951⟩