Publications

• Article dans une revue

Deep levels in AlGaN/GaN HEMTs on silicon substrate are characterized by current deep level transient spectroscopy

H. Mosbahi, M. Gassoumi, Christophe Gaquière, M.A. Zaidi, H. Maaref

Optoelectronics and Advanced Materials - Rapid Communications, 2010, 4, pp.1783-1785. ⟨hal-00567897⟩

• Article dans une revue

Characterization of ytterbium silicide formed in ultra high vacuum

Adam Laszcz, Jacek Ratajczak, Andrzej Czerwinski, Jerzy Katcki, Vesna Srot, Fritz Phillipp, Peter A. van Aken, Dmitri Yarekha, Nicolas Reckinger, Guilhem Larrieu, Emmanuel Dubois

The formation of ytterbium silicide fabricated by annealing at 480 °C for one hour has been studied by means of high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). The annealing process has been performed under ultra high vacuum (UHV) conditions…

Journal of Physics: Conference Series, 2010, 209 : 16th International Conference on Microscopy of Semiconducting Materials, pp.012056 (1--4). ⟨10.1088/1742-6596/209/1/012056⟩. ⟨hal-00549559⟩

• Article dans une revue

Negative refraction of zero order flexural Lamb waves through a two-dimensional phononic crystal

Juliette Pierre, Olga Boyko-Kazymyrenko, Laurent Belliard, Jerome O. Vasseur, Bernard Bonello

We investigate experimentally the refraction of antisymmetric Lamb waves at frequencies in the second band of a two-dimensional phononic crystal. The heterostructure is made of a square lattice of air inclusions in a silicon plate. Our experimental scheme is based on the selective generation of…

Applied Physics Letters, 2010, 97 (12), pp.121919. ⟨10.1063/1.3491290⟩. ⟨hal-00549436⟩

• Article dans une revue

An ontology-based framework for geospatial clustering

Xin Wang, Wei Gu, Danielle Ziébelin, Howard J. Hamilton

no abstract

International Journal of Geographical Information Science, 2010, 24 (11), pp.1601-1630. ⟨hal-00953146⟩

• Article dans une revue

Control of III-V nanowire crystal structure by growth parameter tuning [Invited]

Kimberly A. Dick, Philippe Caroff, Jessica Bolinsson, Maria E. Messing, Jonas Johansson, Knut Deppert, L.R. Wallenberg, Lars Samuelson

In this work we investigate the variation of the crystal structure of gold-seeded III–V nanowires with growth parameters, in order to gain a cohesive understanding of these effects. We investigate six III–V materials: GaAs, InAs, GaP, InP, GaSb and InSb, over a variation of growth conditions. All…

Semiconductor Science and Technology, 2010, 25 (2), pp.024009-1-11. ⟨10.1088/0268-1242/25/2/024009⟩. ⟨hal-00548699⟩

• Article dans une revue

Improved dielectric properties of Bi1.5Zn1.0Nb1.5O7/(111)-oriented Ba0.6Sr0.4TiO3 bilayered films for tunable microwave applications

L.H. Yang, G.S. Wang, X.L. Dong, Denis Remiens

Journal of the American Ceramic Society, 2010, 93, pp.1215-1217. ⟨10.1111/j.1551-2916.2009.03516.x⟩. ⟨hal-00549505⟩

• Article dans une revue

Label-free analysis of water-polluting parasite by electrochemical impedance spectroscopy

T. Houssin, J. Follet, A. Follet, E. Dei-Casa, V. Senez

Biosensors and Bioelectronics, 2010, 25, pp.1122-1129. ⟨10.1016/j.bios.2009.09.039⟩. ⟨hal-00549495⟩

• Article dans une revue

Imperfection-sensitive ductility of aluminium thin films

M. Coulombier, A. Boé, C. Brugger, J.P. Raskin, T. Pardoen

Scripta Materialia, 2010, 62, pp.742-745. ⟨10.1016/j.scriptamat.2010.01.048⟩. ⟨hal-00548611⟩

• Article dans une revue

A 60 GHz power amplifier with 14.5 dBm saturation power and 25% peak PAE in CMOS 65 nm SOI

A. Siligaris, Y. Hamada, C. Mounet, C. Raynaud, B. Martineau, N. Deparis, N. Rolland, M. Fukaishi, P. Vincent

IEEE Journal of Solid-State Circuits, 2010, 45, pp.1286-1294. ⟨10.1109/JSSC.2010.2049456⟩. ⟨hal-00548603⟩

• Article dans une revue

Diameter dependence of the wurtzite-zinc blende transition in InAs nanowires

J. Johansson, K.A. Dick, P. Caroff, M.E. Messing, J. Bolinsson, K. Deppert, L. Samuelson

Journal of Physical Chemistry C, 2010, 114, pp.3837-3842. ⟨10.1021/jp910821e⟩. ⟨hal-00548709⟩