Publications

• Thèse

Développement de résonateurs électromécaniques en technologie Silicon On Nothing, à détection capacitive et amplifiée par transistor MOS, en vue d'une co-intégration permettant d'adresser une application de référence de temps, Development of electromechanical resonators using a Silicon On Nothing technology, with capacitive and enhanced MOSFET detection, in a perspective of a co-integration to address time reference applications

Cédric Durand

Les résonateurs électromécaniques (MEMS), de part leurs bonnes performances, leur petite taille, ou encore leurs possibilités d'intégration au plus proche des transistors, présentent un fort potentiel pour le remplacement des quartz dans les applications de référence de temps. Dans ce contexte…, Due to good performances, small size, or either integration possibilities very close to transistors, electromechanical resonators offer a strong potential for quartz replacement in time reference applications. In this context, we propose to develop electromechanical resonators in a perspective of a…

Micro et nanotechnologies/Microélectronique. Université des Sciences et Technologie de Lille - Lille I, 2009. Français. ⟨NNT : ⟩. ⟨tel-00375804⟩

• Communication dans un congrès

Intégration Mixte SiP/SoC d'un Transmetteur en Technologie CMOS/BiCMOS/BAW/IPD pour des Applications Multimodes WCDMA/DCS

Eric Kerhervé, Andreas Kaiser

FETCH 2009, Jan 2009, Chexbres, Suisse. ⟨hal-00401324⟩

• Article dans une revue

Ferroelectric tunable balanced right- and left-handed transmission lines

A. Marteau, G. Velu, G. Houzet, Ludovic Burgnies, Eric Lheurette, Jean-Claude Carru, D. Lippens

Applied Physics Letters, 2009, 94 (2), pp.023507. ⟨10.1063/1.3068495⟩. ⟨hal-00471867⟩

• Article dans une revue

A birefringent reflector from a 1D anisotropic photonic crystal

Noama Ouchani, Driss Bria, Bahram Djafari-Rouhani, Abdlekarim Nougaoui

We demonstrate theoretically that a one-dimensional anisotropic photonic crystal can exhibit an absolute photonic band gap in which the propagation of light is prohibited for all polarizations and for a given incidence plane. Our structure is formed by the combination of a simple finite…

Journal of Physics: Condensed Matter, 2009, 21, pp.485401/1-10. ⟨10.1088/0953-8984/21/48/485401⟩. ⟨hal-00473066⟩

• Article dans une revue

Experimental and theoretical evidence for subwavelength imaging in phononic crystals

A. Sukhovich, B. Merheb, K. Muralidharan, Jerome O. Vasseur, Yan Pennec, P.A. Deymier, J.H. Page

Physical Review Letters, 2009, 102, pp.154301-1-4. ⟨10.1103/PhysRevLett.102.154301⟩. ⟨hal-00473085⟩

• Article dans une revue

Atomic-scale modeling of the interaction between short polypeptides and carbon surfaces

G. Gianese, V. Rosato, F. Cleri, M. Celino, P. Morales

Journal of Physical Chemistry B, 2009, 113, pp.12105-12112. ⟨10.1021/jp903652v⟩. ⟨hal-00473075⟩

• Article dans une revue

High thermally induced index variations with short response time in InP/GaInAsP/InP waveguide Schottky diodes

N. Saadsaoud, Malek Zegaoui, Didier Decoster, El Hadj Dogheche, X. Wallart, Jean Chazelas

Thermally induced index variations as high as 0.1 were recorded in InP/GaAsInP1.15/InP waveguide Schottky diodes for 1W/mm electrical power per electrode length. Pulse response characterisation showed almost 700ns response time for 1s square pulses under forward biased conditions (I=20mA, V=300mV).

Electronics Letters, 2009, 45 (15), pp.802-803. ⟨10.1049/el.2009.0696⟩. ⟨hal-00473047⟩

• Article dans une revue

Acoustic waves in solids and fluid layered materials

E.H. El Boudouti, Bahram Djafari-Rouhani, Abdellatif Akjouj, L. Dobrzynski

Surface Science Reports, 2009, 64, pp.471-594. ⟨10.1016/j.surfrep.2009.07.005⟩. ⟨hal-00473067⟩

• Article dans une revue

Phase diagrams and optical properties of phosphide, arsenide, and antimonide binary and ternary III-V nanoalloys

G. Guisbiers, M. Wautelet, L. Buchaillot

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2009, 79, pp.155426-1-8. ⟨10.1103/PhysRevB.79.155426⟩. ⟨hal-00472756⟩

• Article dans une revue

AlGaN/GaN MISHEMT with hBN as gate dielectric

J.C. Gerbedoen, Ali Soltani, M. Mattalah, M. Moreau, P. Thevenin, Jean-Claude de Jaeger

Metal/Insulator/Semiconductor AlGaN/GaN High Electron Mobility Transistors (MISHEMTs) on sapphire substrate were fabricated with hexagonal Boron Nitride (hBN) thin film as gate dielectric. The hBN thin film, deposited by MW-PECVD, is an insulator permitting to obtain a low leakage current gate, an…

Diamond and Related Materials, 2009, 18, pp.1039 - 1042. ⟨10.1016/j.diamond.2009.02.018⟩. ⟨hal-00435395⟩