Publications

• Communication dans un congrès

Temperature dependent degradation modes in AlGaN/GaN HEMTs

Y. Douvry, Virginie Hoel, Jean-Claude de Jaeger, N. Defrance, N. Malbert, N. Labat, A. Curutchet, C. Sury, C. Dua, M. Oualli, M. Piazza, J. Bluet, W. Chikhaoui, C. Bru-Chevallier

5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, Paris, France. pp.114-117. ⟨hal-00550022⟩

• Article dans une revue

LP MOCVD growth of InAlN/GaN HEMT heterostructure : comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications

M.A. Di Forte-Poisson, N. Sarazin, M. Magis, M. Tordjman, J. Di Persio, R. Langer, E. Iliopoulos, A. Georgakilas, P. Kominou, M. Guziewicz, E. Kaminska, A. Piotrowska, Christophe Gaquière, M. Oualli, E. Chartier, E. Morvan, S. Delage

Physica Status Solidi C: Current Topics in Solid State Physics, 2010, 7, pp.1317-1324. ⟨10.1002/pssc.200983114⟩. ⟨hal-00549909⟩

• Article dans une revue

Analysis of deep levels in AlGaN/GaN/Al2O3 heterostructures by CDLTS under a gate pulse

M. Gassoumi, O. Fathallah, Christophe Gaquière, H. Maaref

Physica B: Condensed Matter, 2010, 405, pp.2337-2339. ⟨10.1016/j.physb.2010.02.042⟩. ⟨hal-00549453⟩

• Article dans une revue

Charged impurity scattering and mobility in gated silicon nanowires

M.P. Persson, H. Mera, Y.M. Niquet, C. Delerue, M. Diarra

We study the effects of charged impurity scattering on the electronic transport properties of h110i-oriented Si nanowires in a gate-all-around geometry, where the impurity potential is screened by the gate, gate oxide and conduction band electrons. The electronic structure of the doped nanowires is…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82 (11), pp.115318. ⟨10.1103/PhysRevB.82.115318⟩. ⟨hal-00549048⟩

• Communication dans un congrès

Influence de la température et de l'efficacité d'injection sur les caractéristiques physiques des lasers à cascades quantiques

A. Hamadou, D. Nehari, S. Lamari, Jean-Luc Thobel

International Conference on Optics, Photonics and their Applications, ICOPA 2010, 2010, Algiers, Algérie. ⟨hal-00591740⟩

• Article dans une revue

A novel design of a multiband microstrip antenna for the 3G cellular phones applications

M. Ben Ahmed, M. Bouhorma, F. El Ouaai, A. Mamouni, A.A. Boudhir

International Journal of Information and Communication Technologies, 2010, 3, pp.1-7. ⟨hal-00591736⟩

• Communication dans un congrès

Bottom-up approach to designing nanostructured materials for a variety of applications

D. Hourlier

7th International Conference on Inorganic Materials, 2010, Biarritz, France. ⟨hal-00591743⟩

• Article dans une revue

Asymmetric Franck-Condon factors in suspended carbon nanotube quantum dots

F. Cavaliere, E. Mariani, Renaud Leturcq, C. Stampfer, M. Sassetti

Electronic states and vibrons in carbon nanotube quantum dots have in general different location and size. As a consequence, the conventional Anderson-Holstein model, coupling vibrons to the dot total charge only, may no longer be appropriated in general. Here we explicitly address the role of the…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 81 (20), pp.201303(R). ⟨10.1103/PhysRevB.81.201303⟩. ⟨hal-00549039⟩

• Article dans une revue

Nonequilibrium fluctuation relations in a quantum coherent conductor

S. Nakamura, Y. Yamauchi, M. Hashisaka, K. Chida, K. Kobayashi, T. Ono, R. Leturcq, K. Ensslin, K. Saito, Y. Utsumi, A.C. Gossard

We experimentally demonstrate the validity of non-equilibrium fluctuation relations by using a quantum coherent conductor. In equilibrium the fluctuation-dissipation relation leads to the correlation between current and current noise at the conductor, namely, Johnson-Nyquist relation. When the…

Physical Review Letters, 2010, 104 (8), pp.080602. ⟨10.1103/PhysRevLett.104.080602⟩. ⟨hal-00549432⟩

• Article dans une revue

Monte Carlo based microscopic description of electron transport in GaAs/Al0.45Ga0.55As quantum-cascade laser structure

P. Borowik, Jean-Luc Thobel, L. Adamowicz

Results of multiparticle Monte Carlo simulations of midinfrared quantum cascade lasers structure initially fabricated by Page et al. are presented. The main aim of this paper is to discuss in details how electric current flows through the structure and which subbands are involved in this process.…

Journal of Applied Physics, 2010, 108 (7), pp.073106. ⟨10.1063/1.3488909⟩. ⟨hal-00549482⟩