Publications

• Communication dans un congrès

Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET

Aurélien Olivier, Nicolas Wichmann, Jiongjong Mo, Albert M.D. Noudeviwa, Yannick Roelens, L. Desplanque, X. Wallart, Francois Danneville, Gilles Dambrine, S. Bollaert, François Martin, O. Desplats, Jérôme Saint-Martin, Minghua Shi, Y. Wang, M-P Chauvat, P. Ruterana, Hassan Maher

In this paper, a 200 nm n-channel inversion-type self-aligned In 0.53 Ga 0.47 As MOSFET with a Al 2 O 3 gate oxide deposited by Atomic Layer Deposition (ALD) is demonstrated. Two ion implantation processes using silicon nitride side-wall are performed for the fabrication of the n-type source and…

22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, May 2010, Takamatsu, Japan. pp.41-43, ⟨10.1109/ICIPRM.2010.5515926⟩. ⟨hal-00549921⟩

• Communication dans un congrès

G-band low noise amplifier and oscillator for synthetic aperture applications

G. Desruelles, N. Rolland, P. Rolland

40th European Microwave Conference, EuMC 2010, 2010, France. pp.525-528. ⟨hal-00549933⟩

• Communication dans un congrès

A compact coplanar waveguide metamaterial-inspired line and its use in tunable narrow bandpass filters

Alejandro Borja, Jorge Carbonell, Vicente Boria, Angel Belenguer, Didier Lippens

In this paper, novel cells, arrays, and reconfigurable metamaterial-inspired coplanar waveguide lines are studied. The novelty stems from the control of the so-called electric and magnetic plasma frequencies by properly designing the loading elements. In particular, wide shunt wires permit one to…

40th European Microwave Conference, EuMC 2010, Sep 2010, Paris, France. pp.922-925, ⟨10.23919/EUMC.2010.5616941⟩. ⟨hal-00549943⟩

• Communication dans un congrès

Temperature dependent degradation modes in AlGaN/GaN HEMTs

Y. Douvry, Virginie Hoel, Jean-Claude de Jaeger, N. Defrance, N. Malbert, N. Labat, A. Curutchet, C. Sury, C. Dua, M. Oualli, M. Piazza, J. Bluet, W. Chikhaoui, C. Bru-Chevallier

5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, Paris, France. pp.114-117. ⟨hal-00550022⟩

• Article dans une revue

Charged impurity scattering and mobility in gated silicon nanowires

M.P. Persson, H. Mera, Y.M. Niquet, C. Delerue, M. Diarra

We study the effects of charged impurity scattering on the electronic transport properties of h110i-oriented Si nanowires in a gate-all-around geometry, where the impurity potential is screened by the gate, gate oxide and conduction band electrons. The electronic structure of the doped nanowires is…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82 (11), pp.115318. ⟨10.1103/PhysRevB.82.115318⟩. ⟨hal-00549048⟩

• Communication dans un congrès

Influence de la température et de l'efficacité d'injection sur les caractéristiques physiques des lasers à cascades quantiques

A. Hamadou, D. Nehari, S. Lamari, Jean-Luc Thobel

International Conference on Optics, Photonics and their Applications, ICOPA 2010, 2010, Algiers, Algérie. ⟨hal-00591740⟩

• Article dans une revue

A novel design of a multiband microstrip antenna for the 3G cellular phones applications

M. Ben Ahmed, M. Bouhorma, F. El Ouaai, A. Mamouni, A.A. Boudhir

International Journal of Information and Communication Technologies, 2010, 3, pp.1-7. ⟨hal-00591736⟩

• Communication dans un congrès

Bottom-up approach to designing nanostructured materials for a variety of applications

D. Hourlier

7th International Conference on Inorganic Materials, 2010, Biarritz, France. ⟨hal-00591743⟩

• Article dans une revue

Asymmetric Franck-Condon factors in suspended carbon nanotube quantum dots

F. Cavaliere, E. Mariani, Renaud Leturcq, C. Stampfer, M. Sassetti

Electronic states and vibrons in carbon nanotube quantum dots have in general different location and size. As a consequence, the conventional Anderson-Holstein model, coupling vibrons to the dot total charge only, may no longer be appropriated in general. Here we explicitly address the role of the…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 81 (20), pp.201303(R). ⟨10.1103/PhysRevB.81.201303⟩. ⟨hal-00549039⟩

• Article dans une revue

Nonequilibrium fluctuation relations in a quantum coherent conductor

S. Nakamura, Y. Yamauchi, M. Hashisaka, K. Chida, K. Kobayashi, T. Ono, R. Leturcq, K. Ensslin, K. Saito, Y. Utsumi, A.C. Gossard

We experimentally demonstrate the validity of non-equilibrium fluctuation relations by using a quantum coherent conductor. In equilibrium the fluctuation-dissipation relation leads to the correlation between current and current noise at the conductor, namely, Johnson-Nyquist relation. When the…

Physical Review Letters, 2010, 104 (8), pp.080602. ⟨10.1103/PhysRevLett.104.080602⟩. ⟨hal-00549432⟩