Publications

• Article dans une revue

Nanowire biocompatibility in the brain - Looking for a needle in a 3D stack

Cecilia Eriksson-Linsmeier, Christelle Prinz, Lina M. E. Pettersson, Philippe Caroff, Lars Samuelson, Jens Schouenborg, Lars Montelius, Nils Danielsen

We investigated the brain-tissue response to nanowire implantations in the rat striatum after 1, 6, and 12 weeks using immunohistochemistry. The nanowires could be visualized in the scar by confocal microscopy (through the scattered laser light). For the nanowire-implanted animals, there is a…

Nano Letters, 2009, 9 (12), pp.4184–4190. ⟨10.1021/nl902413x⟩. ⟨hal-00471929⟩

• Article dans une revue

Approach to interference cancellation in DS-CDMA optical networks

A. Okassa-M'Foubat, Iyad Dayoub, Jean-Michel Rouvaen, W. Hamouda, A. Mazen

Journal of Optical Communications and Networking, 2009, 1, pp.204-212. ⟨10.1364/JOCN.1.000204⟩. ⟨hal-00471830⟩

• Article dans une revue

Diagnostics and doppler tomography of liquid flows with ultrasonic phase conjugation

Nikolay Smagin, Y.V. Pyl'Nov, V.L. Preobrazhenskii, Philippe Pernod

Acoustical Physics, 2009, 55, pp.657-664. ⟨10.1134/S1063771009040228⟩. ⟨hal-00469643⟩

• Communication dans un congrès

A High Mobility Field-Effect Transistor as an Antenna for sub-THz Radiation

Maciej Sakowicz, Jerzy Łusakowski, Krzysztof Karpierz, Marian Grynberg, Wojciech Gwarek, Stephane Boubanga Tombet, Dominique Coquillat, Wojciech Knap, Andrey Shchepetov, S. Bollaert

The experiments on radiation coupling to field effect transistors working as terahertz radiation detectors are reported. Two types of high electron mobility transistors: InGaAs/InAlAs and GaAs/AlGaAs, with different layout geometries are studied. We show that terahertz radiation coupling efficiency…

29th International Conference on Physics of Semiconductors, ICPS-29, Jul 2008, Rio de Janeiro, Brazil. pp.503-504, ⟨10.1063/1.3295528⟩. ⟨hal-00545966⟩

• Article dans une revue

A simple method for measuring Si-Fin sidewall roughness by AFM

X.H. Tang, V. Bayot, N. Reckinger, D. Flandre, J.P. Raskin, Emmanuel Dubois, B. Nysten

The gate oxide reliability and the electrical behavior of FinFETs are directly related to the surface characteristics of the fin vertical sidewalls. The surface roughness of the fin sidewalls is one of the most important structural parameters to be monitoredin order to optimize the fin patterning…

IEEE Transactions on Nanotechnology, 2009, 8, pp.611-616. ⟨10.1109/TNANO.2009.2021064⟩. ⟨hal-00471972⟩

• Article dans une revue

Deep level investigation by capacitance and conductance transient spectroscopy in AlGaN/GaN/SiC HEMTs

M. Gassoumi, B. Grimbert, M.A. Poisson, Julien Fontaine, M.A. Zaidi, Christophe Gaquière, H. Maaref

Journal of Optoelectronics and Advanced Materials, 2009, 11, pp.1713-1717. ⟨hal-00473671⟩

• Communication dans un congrès

Multimode transmitters with ΔΣ-based all-digital RF signal generation

A. Frappe, A. Flament, B. Stefanelli, A. Kaiser

18th Workshop on Advances in Analog Circuit Design, AACD 2009, 2009, Lund, Sweden. ⟨hal-00575268⟩

• Communication dans un congrès

Optimisation de la bande passante d'un détecteur acousto-optique

N. Ouail, Michel Pommeray, Jean-Claude Kastelik, Samuel Dupont

Horizons de l'Optique, OPTIQUE Lille 2009, 2009, Villeneuve d'Ascq, France. ⟨hal-00575295⟩

• Communication dans un congrès

Acoustic waves in layered media : comparative study of Raman scattering and reflection delay time

E.H. El Boudouti, R. Zelmat, Y. El Hassouani, R. Bailich, Bahram Djafari-Rouhani

15th International Conference on Photoacoustic and Photothermal Phenomena, ICPPP15, 2009, Leuven, Belgium. ⟨hal-00575398⟩

• Communication dans un congrès

Observation of the 'lobe structure' in the ballistic interferometers

Y. Yamauchi, M. Hashisaka, S. Nakamura, K. Chida, S. Kasai, T. Ono, R. Leturcq, K. Ensslin, D.C. Driscoll, A.C. Gossard, K. Kobayashi

18th International Conference on Electronic Properties of Two-Dimensional Systems, EP2DS-18, 2009, Kobe, Japan. ⟨hal-00575422⟩