Publications

• Communication dans un congrès

Study of nano-domains by piezoresponse force microscopy of relaxor PMN-PT thin films : influence of the annealing temperature, film thickness and composition

M. Detalle, R. Liang, Caroline Soyer, Denis Remiens, X. Dong

European Materials Research Society Spring Meeting, E-MRS Spring 2009, Symposium H : Synthesis, Processing and Characterization of Nanoscale Multi Functional Oxide Films II, 2009, Strasbourg, France. ⟨hal-00575749⟩

• Chapitre d'ouvrage

Métamateriaux électromagnétiques : des micro-ondes à l'optique

D. Lippens

Leray J.L., Boudenot J.C., Gautier J. La micro-nano électronique, enjeux et mutations, CNRS ÉDITIONS, pp.355-358, 2009. ⟨hal-00575785⟩

• Communication dans un congrès

Time domain analyses of trapping effects of AlInN/GaN HEMT devices

Christophe Gaquière, D. Ducatteau, D. Theron, F Medjdoub, M.A. Poisson

International Microwave Symposium, IMS 2009, Workshop WWC : Advanced Measurement Techniques, Adapted for Different Memory Effects, 2009, Boston, MA, United States. ⟨hal-00575423⟩

• Communication dans un congrès

Novel approach for planar Bragg grating characterization using prism coupling

J. Pello, T. Le, A. Lim, El Hadj Dogheche, M. Kaba, K. Pita, Didier Decoster, J.P. Huignard, S.C. Tjin, J. Chazelas

Asia Communications and Photonics Conference and Exhibition, ACP 2009, Optoelectronic Materials and Devices IV, 2009, China. pp.76310A-1-7, ⟨10.1117/12.852247⟩. ⟨hal-00579156⟩

• Communication dans un congrès

Wurtzite-zinc blende transition in InAs nanowires : experiments and theory

Jonas Johansson, Philippe Caroff, Kimberly A. Dick, Maria E. Messing, Jessica Bolinsson, Knut Deppert, Lars Samuelson

13th European Workshop on Metalorganic Vapor Phase Epitaxy, EWMOVPE XIII, 2009, Ulm, Germany. ⟨hal-00810483⟩

• Article dans une revue

Determination of the electrostatic lever arm of carbon nanotube field effect transistors using Kelvin force microscopy

David Brunel, D. Deresmes, Thierry Melin

We use Kelvin force microscopy (KFM) to study the electrostatic properties of single-walled carbon nanotube field effect transistor devices (CNTFETs) with backgate geometry at room temperature. We show that KFM maps recorded as a function of the device backgate polarization enable a complete…

Applied Physics Letters, 2009, 94, pp.223508-1-3. ⟨10.1063/1.3148364⟩. ⟨hal-00473086⟩

• Communication dans un congrès

Electrode sizing for guided wave resonator above a Bragg mirror

I. Kone, A. Reinhardt, F. Domingue, Bertrand Dubus, L. Buchaillot, F. Casset, J.F. Carpentier, M. Aid

63rd IEEE International Frequency Control Symposium, joint with 23rd European Frequency and Time Forum, EFTF-IFCS 2009, 2009, France. pp.904-907, ⟨10.1109/FREQ.2009.5168318⟩. ⟨hal-00474071⟩

• Article dans une revue

Self-heating phenomena in high-power III-N transistors and new thermal characterization methods developed within EU project TARGET

J. Kuzmik, S. Bychikhin, E. Pichonat, Christophe Gaquière, E. Morvan, E. Kohn, Jean-Pierre Teyssier, D. Pogany

In the framework of the Top Amplifier Research Groups in a European Team (TARGET) project, we developed a new electrical method for the temperature measurement of HEMTs and performed several unique studies on the self-heating effects in AlGaN/GaN HEMTs. This method, in combination with transient…

International Journal of Microwave and Wireless Technologies, 2009, 1, pp.153 - 160. ⟨10.1017/S1759078709990444⟩. ⟨hal-00514218⟩

• Article dans une revue

Diagnostics and doppler tomography of liquid flows with ultrasonic phase conjugation

Nikolay Smagin, Y.V. Pyl'Nov, V.L. Preobrazhenskii, Philippe Pernod

Acoustical Physics, 2009, 55, pp.657-664. ⟨10.1134/S1063771009040228⟩. ⟨hal-00469643⟩

• Article dans une revue

A simple method for measuring Si-Fin sidewall roughness by AFM

X.H. Tang, V. Bayot, N. Reckinger, D. Flandre, J.P. Raskin, Emmanuel Dubois, B. Nysten

The gate oxide reliability and the electrical behavior of FinFETs are directly related to the surface characteristics of the fin vertical sidewalls. The surface roughness of the fin sidewalls is one of the most important structural parameters to be monitoredin order to optimize the fin patterning…

IEEE Transactions on Nanotechnology, 2009, 8, pp.611-616. ⟨10.1109/TNANO.2009.2021064⟩. ⟨hal-00471972⟩