Publications

• Communication dans un congrès

Evaluation des effets d'exposition des téléphones cellulaires sur la tête humaine

S. Bri, O. Benzaim, A. Mamouni

TELECOM'2009 & 6èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2009, Maroc. pp.B1-5, 1-4. ⟨hal-00573517⟩

• Article dans une revue

Self-heating phenomena in high-power III-N transistors and new thermal characterization methods developed within EU project TARGET

J. Kuzmik, S. Bychikhin, E. Pichonat, Christophe Gaquière, E. Morvan, E. Kohn, Jean-Pierre Teyssier, D. Pogany

In the framework of the Top Amplifier Research Groups in a European Team (TARGET) project, we developed a new electrical method for the temperature measurement of HEMTs and performed several unique studies on the self-heating effects in AlGaN/GaN HEMTs. This method, in combination with transient…

International Journal of Microwave and Wireless Technologies, 2009, 1, pp.153 - 160. ⟨10.1017/S1759078709990444⟩. ⟨hal-00514218⟩

• Communication dans un congrès

Novel approach for planar Bragg grating characterization using prism coupling

J. Pello, T. Le, A. Lim, El Hadj Dogheche, M. Kaba, K. Pita, Didier Decoster, J.P. Huignard, S.C. Tjin, J. Chazelas

Asia Communications and Photonics Conference and Exhibition, ACP 2009, Optoelectronic Materials and Devices IV, 2009, China. pp.76310A-1-7, ⟨10.1117/12.852247⟩. ⟨hal-00579156⟩

• Communication dans un congrès

A High Mobility Field-Effect Transistor as an Antenna for sub-THz Radiation

Maciej Sakowicz, Jerzy Łusakowski, Krzysztof Karpierz, Marian Grynberg, Wojciech Gwarek, Stephane Boubanga Tombet, Dominique Coquillat, Wojciech Knap, Andrey Shchepetov, S. Bollaert

The experiments on radiation coupling to field effect transistors working as terahertz radiation detectors are reported. Two types of high electron mobility transistors: InGaAs/InAlAs and GaAs/AlGaAs, with different layout geometries are studied. We show that terahertz radiation coupling efficiency…

29th International Conference on Physics of Semiconductors, ICPS-29, Jul 2008, Rio de Janeiro, Brazil. pp.503-504, ⟨10.1063/1.3295528⟩. ⟨hal-00545966⟩

• Article dans une revue

Fast relaxation of hot carriers by impact ionization in semiconductor nanocrystals : role of defects

Guy Allan, Christophe Delerue

We present calculations predicting that defects at the surface of semiconductor nanocrystals have a strong influence on the dynamics of hot carriers after photoexcitation. The relaxation of excited carriers by impact ionization of carriers trapped on deep levels is efficient, in particular in the…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2009, 79, pp.195324-1-5. ⟨10.1103/PhysRevB.79.195324⟩. ⟨hal-00473094⟩

• Article dans une revue

Determination of the electrostatic lever arm of carbon nanotube field effect transistors using Kelvin force microscopy

David Brunel, D. Deresmes, Thierry Melin

We use Kelvin force microscopy (KFM) to study the electrostatic properties of single-walled carbon nanotube field effect transistor devices (CNTFETs) with backgate geometry at room temperature. We show that KFM maps recorded as a function of the device backgate polarization enable a complete…

Applied Physics Letters, 2009, 94, pp.223508-1-3. ⟨10.1063/1.3148364⟩. ⟨hal-00473086⟩

• Article dans une revue

Comment on "Size-dependent composition and molar extinction coefficient of PbSe semiconductor nanocrystals

Iwan Moreels, Karel Lambert, David de Muynck, Frank Vanhaecke, Dirk Poelman, José C Martins, Guy Allan, Zeger Hens

Comment on "Size-dependent composition and molar extinction coefficient of PbSe semiconductor nanocrystals". ACS Nano, 2009, 3, pp.2053. ⟨10.1021/nn9005363⟩. ⟨hal-00473074⟩

• Article dans une revue

Ultracompact optical filter based on a stub resonator in GaInAsP/InP optical wire technology

Sophie Maricot, Marie Lesecq, Jean-Pierre Vilcot, Christiane Legrand, Marc François, Maxime Beaugeois

Optics Letters, 2009, 34, pp.1936-1938. ⟨10.1364/OL.34.001936⟩. ⟨hal-00473045⟩

• Article dans une revue

Orbital and charge-resolved polaron states in CdSe dots and rods probed by scanning tunneling spectroscopy

Z. Sun, I. Swart, C. Delerue, D. Vanmaekelbergh, P. Liljeroth

Physical Review Letters, 2009, 102, pp.196401-1-4. ⟨10.1103/PhysRevLett.102.196401⟩. ⟨hal-00473341⟩

• Article dans une revue

12 GHz F-max GaN/AlN/AlGaN nanowire MISFET

S. Vandenbrouck, K. Madjour, D. Theron, Y.J. Dong, Y. Li, C.M. Lieber, Christophe Gaquière

IEEE Electron Device Letters, 2009, 30, pp.322-324. ⟨10.1109/LED.2009.2014791⟩. ⟨hal-00473429⟩