Publications

• Article dans une revue

UHV fabrication of the ytterbium silicide as potential low schottky barrier S/D contact material for N-type MOSFET

Dmitri Yarekha, G. Larrieu, N. Breil, Emmanuel Dubois, S. Godey, X. Wallart, Caroline Soyer, Denis Remiens, N. Reckinger, Xing Tang, A. Laszcz, J. Ratajczak, A. Halimaoui

ECS Transactions, 2009, 19, pp.339-344. ⟨10.1149/1.3118961⟩. ⟨hal-00471999⟩

• Article dans une revue

Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs

G. Larrieu, Dmitri Yarekha, Emmanuel Dubois, D. Deresmes, N. Breil, N. Reckinger, Xing Tang, A. Halimaoui

The paper focuses on specific issues associated to rare earth silicide integration on UTB-SOI substrate with a particular attention to erbium and ytterbium silicides. Due to the limited Si source, defects generation on SOI is prevented compared to bulk substrate. Reaction of RE with dielectric…

ECS Transactions, 2009, 19 (4), pp.201-207. ⟨10.1149/1.3117410⟩. ⟨hal-00471998⟩

• Article dans une revue

TEM characterization of polysilicon and silicide fin fabrication processes of FinFETs

J. Ratajczak, Adam Laszcz, A. Czerwinski, J. Katcki, Xing Tang, N. Reckinger, Dmitri Yarekha, Guilhem Larrieu, Emmanuel Dubois

Acta Physica Polonica A, 2009, 116, pp.89-91. ⟨hal-00472000⟩

• Article dans une revue

InSb heterostructure nanowires : MOVPE growth under extreme lattice mismatch

P. Caroff, M.E. Messing, B.M. Borg, K.A. Dick, K. Deppert, L.E. Wernersson

Nanotechnology, 2009, 20, pp.495606-1-7. ⟨10.1088/0957-4484/20/49/495606⟩. ⟨hal-00471954⟩

• Article dans une revue

Atomic scale flattening, step formation and graphitization blocking on 6H-and 4H-SiC{0001} surfaces under Si flux

F.J. Ferrer, E. Moreau, D. Vignaud, S. Godey, X. Wallart

Semiconductor Science and Technology, 2009, 24, pp.125014-1-4. ⟨10.1088/0268-1242/24/12/125014⟩. ⟨hal-00471909⟩

• Article dans une revue

The collagen assisted self-assembly of silicon nanowires

B. Salhi, Francois Vaurette, B. Grandidier, D. Stievenard, O. Melnyk, Yannick Coffinier, Rabah Boukherroub

Nanotechnology, 2009, 20, pp.235601-1-6. ⟨10.1088/0957-4484/20/23/235601⟩. ⟨hal-00473380⟩

• Communication dans un congrès

Analog to digital microfluidic converter

Renaud Dufour, Chang Wu, Farida Bendriaa, Vincent Thomy, Vincent Senez

This paper presents an Analog to Digital Microfluidic Converter (ADMC) using passive valves and enabling the conversion of a continuous liquid flow into droplets for electrowetting on dielectric (EWOD) actuation. Valves calibration, geometry characteristics and losses reduction have been optimized…

European COMSOL Conference, 2009, Milan, Italy. pp.1-4. ⟨hal-05146777⟩

• Article dans une revue

Study of the high-frequency performance of III-As nanojunctions using a three-dimensional ensemble Monte Carlo model

T. Sadi, Jean-Luc Thobel

Journal of Physics: Conference Series, 2009, 193, pp.012017-1-4. ⟨10.1088/1742-6596/193/1/012017⟩. ⟨hal-00473657⟩

• Article dans une revue

Tunable room temperature terahertz sources based on two dimensional plasma instability in GaN HEMTs

A. El Fatimy, T. Suemitsu, T. Otsuji, N. Dyakonova, W. Knap, Y.M. Meziani, S. Vandenbrouk, K. Madjour, D. Theron, Christophe Gaquière, P. Prystawko, C. Skierbiszewski

Journal of Physics: Conference Series, 2009, 193, pp.012072-1-4. ⟨10.1088/1742-6596/193/1/012072⟩. ⟨hal-00473645⟩

• Article dans une revue

Physical analysis of thermal effects on the optimization of GaN Gunn diodes

Xing Tang, Michel Rousseau, Christophe Dalle, Jean-Claude de Jaeger

Applied Physics Letters, 2009, 95, pp.142102-1-3. ⟨10.1063/1.3240873⟩. ⟨hal-00473636⟩