Publications

• Article dans une revue

2x2 InP optical switching matrix based on carrier-induced effects for 1.55-µm applications

Malek Zegaoui, Nargess Choueib, Joseph Harari, Didier Decoster, V. Magnin, X. Wallart, Jean Chazelas

This letter demonstrates a 2 × 2 low optical crosstalk and low power consumption switching matrix device based on carrier-induced effects on an InP substrate. The matrix device comprises two digital optical switches (DOSs) with a wide multimode Y-junction associated with a sinusoidal passive…

IEEE Photonics Technology Letters, 2009, 21 (19), pp.1357-1359. ⟨10.1109/LPT.2009.2026484⟩. ⟨hal-00472780⟩

• Article dans une revue

Reconfigurable complex digital delta-sigma modulator synthesis for digital wireless transmitters

C.N. Nzeza, A. Kaiser, A. Cathelin

Revue Roumaine des Sciences Techniques. Serie Électrotechnique et Énergétique, 2009, 4, pp.385-394. ⟨hal-00471992⟩

• Article dans une revue

Fast relaxation of hot carriers by impact ionization in semiconductor nanocrystals : role of defects

Guy Allan, Christophe Delerue

We present calculations predicting that defects at the surface of semiconductor nanocrystals have a strong influence on the dynamics of hot carriers after photoexcitation. The relaxation of excited carriers by impact ionization of carriers trapped on deep levels is efficient, in particular in the…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2009, 79, pp.195324-1-5. ⟨10.1103/PhysRevB.79.195324⟩. ⟨hal-00473094⟩

• Article dans une revue

Electron transport properties of gallium nitride for microscopic power device modelling

Brahim Benbakhti, Michel Rousseau, Ali Soltani, Jean-Claude de Jaeger

The design of power GaN devices has to take into account the impact of temperature on device materials due to highly dissipated power and a consequent large self-heating. The accurate knowledge of transport properties as a function of the lattice temperature is essential in order to make a good…

Journal of Physics: Conference Series, 2009, 193, pp.012005-1-4. ⟨10.1088/1742-6596/193/1/012005⟩. ⟨hal-00473639⟩

• Article dans une revue

Contactless microwave technique based on a spread-loss model for dielectric materials characterization

Kamel Haddadi, M.M. Wang, O. Benzaim, D. Glay, T. Lasri

IEEE Microwave and Wireless Components Letters, 2009, 19, pp.33-35. ⟨10.1109/LMWC.2008.2008573⟩. ⟨hal-00472450⟩

• Article dans une revue

Carrier dynamics in Fe-doped GaN epilayers

R. Aleksiejunas, M. Azize, Z. Bougrioua, T. Malinauskas, S. Nargelas, K. Jarasiunas

Physica Status Solidi C: Current Topics in Solid State Physics, 2009, 6, pp.S723-S726. ⟨10.1002/pssc.200880832⟩. ⟨hal-00472681⟩

• Article dans une revue

Nanowire biocompatibility in the brain - Looking for a needle in a 3D stack

Cecilia Eriksson-Linsmeier, Christelle Prinz, Lina M. E. Pettersson, Philippe Caroff, Lars Samuelson, Jens Schouenborg, Lars Montelius, Nils Danielsen

We investigated the brain-tissue response to nanowire implantations in the rat striatum after 1, 6, and 12 weeks using immunohistochemistry. The nanowires could be visualized in the scar by confocal microscopy (through the scattered laser light). For the nanowire-implanted animals, there is a…

Nano Letters, 2009, 9 (12), pp.4184–4190. ⟨10.1021/nl902413x⟩. ⟨hal-00471929⟩

• Article dans une revue

In-plane polarities of nonpolar wurtzite epitaxial films deposited on m- and r-plane sapphire substrates

Philippe Vennéguès, Tiankai Zhu, Z. Bougrioua, Denis Martin, J. Zuniga-Perez, Nicolas Grandjean

The in-plane polarities of GaN and ZnO non-polar films deposited on r - and m-sapphire are compared. The polarity is unique on r-sapphire and mixed on m-sapphire because the direction on the substrate surface parallel to the wurztite c-direction is polar in the first case and nonpolar in the second…

Japanese Journal of Applied Physics Part 1: Regular Papers and Short Notes and Review Papers, 2009, 48 (9), pp.090211-1-3. ⟨10.1143/JJAP.48.090211⟩. ⟨hal-00472455⟩

• Article dans une revue

Modeling of three-dimensional diffusible resistors with the one-dimensional tube multiplexing method

J.N. Gillet, J.Y. Degorce, M. Meunier

Semiconductor Science and Technology, 2009, 24, pp.095010-1-11. ⟨10.1088/0268-1242/24/9/095010⟩. ⟨hal-00473096⟩

• Article dans une revue

Determination of the electrostatic lever arm of carbon nanotube field effect transistors using Kelvin force microscopy

David Brunel, D. Deresmes, Thierry Melin

We use Kelvin force microscopy (KFM) to study the electrostatic properties of single-walled carbon nanotube field effect transistor devices (CNTFETs) with backgate geometry at room temperature. We show that KFM maps recorded as a function of the device backgate polarization enable a complete…

Applied Physics Letters, 2009, 94, pp.223508-1-3. ⟨10.1063/1.3148364⟩. ⟨hal-00473086⟩