Publications

• Article dans une revue

UHV fabrication of the ytterbium silicide as potential low schottky barrier S/D contact material for N-type MOSFET

Dmitri Yarekha, G. Larrieu, N. Breil, Emmanuel Dubois, S. Godey, X. Wallart, Caroline Soyer, Denis Remiens, N. Reckinger, Xing Tang, A. Laszcz, J. Ratajczak, A. Halimaoui

ECS Transactions, 2009, 19, pp.339-344. ⟨10.1149/1.3118961⟩. ⟨hal-00471999⟩

• Article dans une revue

Dynamics of coupled spins in quantum dots with strong spin-orbit interaction

A. Pfund, I. Shorubalko, K. Ensslin, R. Leturcq

We investigated the time dependence of two-electron spin states in a double quantum dot fabricated in an InAs nanowire. In this system, spin-orbit interaction has substantial influence on the spin states of confined electrons. Pumping single electrons through a Pauli spin-blockade configuration…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2009, 12, 79, pp.121306(R). ⟨10.1103/PhysRevB.79.121306⟩. ⟨hal-00473084⟩

• Communication dans un congrès

InAlN/GaN heterostructures for microwave power and beyond

E. Kohn, M. Alomari, A. Denisenko, M. Dipalo, D. Maier, F Medjdoub, C. Pietzka, S. Delage, M.A. Di Forte-Poisson, E. Morvan, N. Sarazin, J.C. Jacquet, C. Dua, J.F. Carlin, N. Grandjean, M. Py, M. Gonschorek, J. Kuzmik, D. Pogany, G. Pozzovivo, C. Ostermaier, L. Toth, B. Pecz, Jean-Claude de Jaeger, Christophe Gaquière, K. Cico, K. Fröhlich, A. Kermaidis, E. Iliopoulos, G. Konstantinidis, C. Giessen, M. Heuken, B. Schineller

International Electron Devices Meeting, IEDM 2009, 2009, United States. pp.1-4, ⟨10.1109/IEDM.2009.5424395⟩. ⟨hal-00474463⟩

• Article dans une revue

Performance evaluation of a multi-band UWB location and communication system based on modified Gegenbauer functions

A. Lamari, F. Elbahhar, Atika Rivenq, Jean-Michel Rouvaen, M. Heddebaut

Wireless Personal Communications, 2009, 48, pp.361-384. ⟨10.1007/s11277-008-9527-9⟩. ⟨hal-00471833⟩

• Article dans une revue

Ultrathin InAlN/AlN barrier HEMT with high performance in normally off operation

C. Ostermaier, G. Pozzovivo, J.F. Carlin, B. Basnar, W. Schrenk, Y. Douvry, Christophe Gaquière, J.C. Dejaeger, K. Cico, K. Frohlich, M. Gonschorek, N. Grandjean, G. Strasser, D. Pogany, J. Kuzmik

IEEE Electron Device Letters, 2009, 30, pp.1030-1032. ⟨10.1109/LED.2009.2029532⟩. ⟨hal-00473635⟩

• Article dans une revue

Doping of poly(3-hexylthiophene) nanofibers : microscopic morphology and electrical properties

S. Desbief, G. Derue, P. Leclère, S. Lenfant, D. Vuillaume, R. Lazzaroni

European Physical Journal: Applied Physics, 2009, 46, pp.12504-1-5. ⟨10.1051/epjap/2009017⟩. ⟨hal-00472767⟩

• Communication dans un congrès

Terahertz plasmonic antennas for quantum cascade lasers

Tahsin Akalin, Wilfried Maineult, Pierre Gellie, Emilien Peytavit, Alessio Andronico, Pascal Filloux, Giuseppe Leo, Jean-Francois Lampin, Carlo Sirtori, Harvey E. Beere, David Ritchie, Stefano Barbieri

Quantum Cascade Lasers (QCL) are probably the most promising sources for Terahertz wave generation. The key issue especially for double metal QCLs is the extraction and the beam shaping of the emitted power. We propose a solution with a TEM-Horn Antenna and we compare it to the most recently…

Asia Pacific Microwave Conference, APMC 2009, Dec 2009, Singapour, Singapore. pp.183-185, ⟨10.1109/APMC.2009.5385404⟩. ⟨hal-00474429⟩

• Article dans une revue

Numerical simulation of magnus force control for projectiles configurations

F. Simon, S. Deck, P. Guillen, A. Merlen, R. Cayzac

Computers and Fluids, 2009, 38, pp.965-968. ⟨10.1016/j.compfluid.2008.09.006⟩. ⟨hal-00469677⟩

• Article dans une revue

InSb heterostructure nanowires : MOVPE growth under extreme lattice mismatch

P. Caroff, M.E. Messing, B.M. Borg, K.A. Dick, K. Deppert, L.E. Wernersson

Nanotechnology, 2009, 20, pp.495606-1-7. ⟨10.1088/0957-4484/20/49/495606⟩. ⟨hal-00471954⟩

• Article dans une revue

Atomic scale flattening, step formation and graphitization blocking on 6H-and 4H-SiC{0001} surfaces under Si flux

F.J. Ferrer, E. Moreau, D. Vignaud, S. Godey, X. Wallart

Semiconductor Science and Technology, 2009, 24, pp.125014-1-4. ⟨10.1088/0268-1242/24/12/125014⟩. ⟨hal-00471909⟩