Publications

• Communication dans un congrès

Modeling of silicon nanowire growth : shaping, doping, and self-arrangement

A. Klimovskaya, A. Efremov, D. Hourlier

IVth Ukrainian Scientific Conference on Physics of Semiconductors, USCPS-4, 2009, Zaporizhzhya, Ukraine. ⟨hal-00810513⟩

• Article dans une revue

Highly selective left-handed transmission line loaded with split ring resonators and wires

Alejandro Borja, Jorge Carbonell, Vicente Boria, Didier Lippens

Applied Physics Letters, 2009, 94 (14), pp.143503-1-3. ⟨10.1063/1.3116647⟩. ⟨hal-00471869⟩

• Communication dans un congrès

InAlN/GaN heterostructures for microwave power and beyond

E. Kohn, M. Alomari, A. Denisenko, M. Dipalo, D. Maier, F Medjdoub, C. Pietzka, S. Delage, M.A. Di Forte-Poisson, E. Morvan, N. Sarazin, J.C. Jacquet, C. Dua, J.F. Carlin, N. Grandjean, M. Py, M. Gonschorek, J. Kuzmik, D. Pogany, G. Pozzovivo, C. Ostermaier, L. Toth, B. Pecz, Jean-Claude de Jaeger, Christophe Gaquière, K. Cico, K. Fröhlich, A. Kermaidis, E. Iliopoulos, G. Konstantinidis, C. Giessen, M. Heuken, B. Schineller

International Electron Devices Meeting, IEDM 2009, 2009, United States. pp.1-4, ⟨10.1109/IEDM.2009.5424395⟩. ⟨hal-00474463⟩

• Chapitre d'ouvrage

Optical and vibrational properties of boron nitride nanotubes

L. Wirtz, A. Rubio

Y.K. Yap. B-C-N nanotubes and related nanostructures, Springer, chapter 5, 105-148, 2009, ⟨10.1007/978-1-4419-0086-9_5⟩. ⟨hal-00575802⟩

• Article dans une revue

Reversible electrowetting on superhydrophobic double-nanotextured surfaces

F. Lapierre, V. Thomy, Yannick Coffinier, R. Blossey, Rabah Boukherroub

Langmuir, 2009, 25, pp.6551-6558. ⟨10.1021/la803756f⟩. ⟨hal-00471821⟩

• Article dans une revue

UHV fabrication of the ytterbium silicide as potential low schottky barrier S/D contact material for N-type MOSFET

Dmitri Yarekha, G. Larrieu, N. Breil, Emmanuel Dubois, S. Godey, X. Wallart, Caroline Soyer, Denis Remiens, N. Reckinger, Xing Tang, A. Laszcz, J. Ratajczak, A. Halimaoui

ECS Transactions, 2009, 19, pp.339-344. ⟨10.1149/1.3118961⟩. ⟨hal-00471999⟩

• Article dans une revue

Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs

G. Larrieu, Dmitri Yarekha, Emmanuel Dubois, D. Deresmes, N. Breil, N. Reckinger, Xing Tang, A. Halimaoui

The paper focuses on specific issues associated to rare earth silicide integration on UTB-SOI substrate with a particular attention to erbium and ytterbium silicides. Due to the limited Si source, defects generation on SOI is prevented compared to bulk substrate. Reaction of RE with dielectric…

ECS Transactions, 2009, 19 (4), pp.201-207. ⟨10.1149/1.3117410⟩. ⟨hal-00471998⟩

• Article dans une revue

TEM characterization of polysilicon and silicide fin fabrication processes of FinFETs

J. Ratajczak, Adam Laszcz, A. Czerwinski, J. Katcki, Xing Tang, N. Reckinger, Dmitri Yarekha, Guilhem Larrieu, Emmanuel Dubois

Acta Physica Polonica A, 2009, 116, pp.89-91. ⟨hal-00472000⟩

• Article dans une revue

InSb heterostructure nanowires : MOVPE growth under extreme lattice mismatch

P. Caroff, M.E. Messing, B.M. Borg, K.A. Dick, K. Deppert, L.E. Wernersson

Nanotechnology, 2009, 20, pp.495606-1-7. ⟨10.1088/0957-4484/20/49/495606⟩. ⟨hal-00471954⟩

• Article dans une revue

Atomic scale flattening, step formation and graphitization blocking on 6H-and 4H-SiC{0001} surfaces under Si flux

F.J. Ferrer, E. Moreau, D. Vignaud, S. Godey, X. Wallart

Semiconductor Science and Technology, 2009, 24, pp.125014-1-4. ⟨10.1088/0268-1242/24/12/125014⟩. ⟨hal-00471909⟩