Publications

• Article dans une revue

Influence of the branches width on the nonlinear output characteristics of InAlAs/InGaAs-based three-terminal junctions

I. Iniguez de La Torre, T. Gonzalez, D. Pardo, C. Gardes, Yannick Roelens, S. Bollaert, J. Mateos

Journal of Applied Physics, 2009, 105 (9), pp.094504. ⟨10.1063/1.3124363⟩. ⟨hal-00471809⟩

• Article dans une revue

Enhancement in nanoscale electrical properties of lead zirconic titanate island fabricated by focused ion beam

R.H. Liang, Denis Remiens, D. Deresmes, Caroline Soyer, David Troadec, X.L. Dong, L.H. Yang, Rachel Desfeux, Antonio Da Costa, Jean-François Blach

Journal of Applied Physics, 2009, 105 (4), pp.044101. ⟨10.1063/1.3073892⟩. ⟨hal-00473718⟩

• Article dans une revue

Molecular dynamics simulations of the solid phase epitaxy of Si : growth mechanism and orientation effects

E. Lampin, Christophe Krzeminski

Journal of Applied Physics, 2009, 106, pp.063519-1-8. ⟨10.1063/1.3211972⟩. ⟨hal-00471990⟩

• Article dans une revue

Left Hand dispersion of a stack of sub-wavelength hole metal arrays at terahertz frequencies

Charles Croënne, F. Garet, Eric Lheurette, J.-L. Coutaz, D. Lippens

Applied Physics Letters, 2009, 94, pp.133112. ⟨hal-00597580⟩

• Article dans une revue

Analog/RF performance of multichannel SOI MOSFET

T.C. Lim, E. Bernard, O. Rozeau, T. Ernst, B. Guillaumot, N. Vulliet, C. Buj-Dufournet, M. Paccaud, Sylvie Lepilliet, Gilles Dambrine, Francois Danneville

IEEE Transactions on Electron Devices, 2009, 56, pp.1473-1482. ⟨10.1109/TED.2009.2021438⟩. ⟨hal-00469684⟩

• Article dans une revue

Arsenic-segregated rare earth silicide junctions : reduction of Schottky barrier and integration in metallic n-MOSFETs on SOI

G. Larrieu, Dmitri Yarekha, Emmanuel Dubois, N. Breil, Olivier Faynot

As an attempt to considerably reduce the equivalent contact resistivity of Schottky junctions, this letter studies the integration of rare-earth silicides, known to feature the lowest Schottky barriers (SBs) to electrons, coupled with a dopant segregation based on arsenic (As$^+$) implantation.…

IEEE Electron Device Letters, 2009, 30 (12), pp.1266-1268. ⟨10.1109/LED.2009.2033085⟩. ⟨hal-00471974⟩

• Article dans une revue

Al and Ti/Al contacts on n-GaN

L. Dobos, B. Pecz, L. Toth, Z.J. Horvath, Z.E. Horvath, E. Horvath, A. Toth, B. Beaumont, Z. Bougrioua

Vacuum, 2009, 84, pp.228-230. ⟨10.1016/j.vacuum.2009.04.022⟩. ⟨hal-00472682⟩

• Article dans une revue

A 60 GHz six-port distance measurement system with sub-millimeter accuracy

Kamel Haddadi, M.M. Wang, D. Glay, T. Lasri

IEEE Microwave and Wireless Components Letters, 2009, 19, pp.644-646. ⟨10.1109/LMWC.2009.2029744⟩. ⟨hal-00472454⟩

• Article dans une revue

Light coupling between photonic crystal and standard photonic waveguides in a compact photonic integrated circuitry using 2D FDTD

S. Haxha, Iyad Dayoub, F. Abdelmalek, W. Aroua, J. Trombi, H. Bouchriha

Open Optics Journal, 2009, 3, pp.44-51. ⟨10.2174/1874328500903010044⟩. ⟨hal-00471828⟩

• Article dans une revue

Magnetically tunable left handed metamaterials by liquid crystal orientation

F. Zhang, L. Kang, Q. Zhao, J. Zhou, X. Zhao, D. Lippens

Optics Express, 2009, 17, pp.4360–4366. ⟨10.1364/OE.17.004360⟩. ⟨hal-00471881⟩