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Affichage de 10931 à 10940 sur 16098

Communication dans un congrès

The mechanical science and fortifications in the Renaissance. Hypothesis and perspectives

Raffaele Pisano

3rd ESHS European Congress for the History of Science ESHS, Wien, 10–12 September, ESHS, Sep 2008, Wien, Austria, Austria. ⟨hal-04519082⟩

Communication dans un congrès

Modelling, fabrication and measurement of AlN based photodetectors

Hassan Ali Barkad, Ali Soltani, Michel Rousseau, Jean-Claude de Jaeger

19th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide, Diamond 2008, Sep 2008, Sitges, Spain. ⟨hal-00811738⟩

Communication dans un congrès

Raman Spectroscopy of boron-doped silicon nanowires

M. Marczak, E. Pichonat, W. Gebicki, Thierry Melin, D. Hourlier

EMRS 2008, Sep 2008, Varsovie, Poland. ⟨hal-00332973⟩

Article dans une revue

Investigation of the electrocatalytic activity of boron-doped diamond electrodes modified with palladium or gold nanoparticles for oxygen reduction reaction in basic medium

Sabine Szunerits, Rabah Boukherroub

The paper reports on the electrocatalytic activity of boron-doped diamond (BDD) electrodes electrochemically modified with palladium (Pd) or gold nanoparticles (Au NPs) towards oxygen reduction reaction (ORR) in alkaline medium. The BDD/Pd NP interface shows a well-defined diffusion-controlled…

Comptes Rendus. Chimie, 2008, 11 (9), pp. 1004-1009. ⟨10.1016/j.crci.2008.01.015⟩. ⟨hal-00365509⟩

Article dans une revue

New THz excitation of planar Goubau line

A. Treizebre, Bertrand Bocquet, Yansheng Xu, Renato G. Bosisio

Quite recently, it has been found that conducting wires lying on a flat dielectric substrate can propagate Terahertz (THz) waves in the same way as conducting wires entirely coated with a dielectric (Goubau line). This phenomenon is interesting because it is a basic requirement to fabricate…

Microwave and Optical Technology Letters, 2008, 50, pp.2998-3001. ⟨10.1002/mop.23850⟩. ⟨hal-00356900⟩

Article dans une revue

GaNAsSb material for ultrafast microwave photoconductive switching application

Kian Hua Tan, Sonn Fatt Yoon, Charlotte Tripon-Canseliet, Wan Khai Loke, Satrio Wicaksono, Salim Faci, Naïma Saadsaoud, Jean-Francois Lampin, Didier Decoster, Jean Chazelas

We report a photoconductive switch with GaNAsSb as active material for microwave switching application. The GaNAsSb layer was grown by molecular beam epitaxy in conjunction with a rf plasma-assisted nitrogen source and a valved antimony cracker source. The 0.5 μm thick GaNAsSb photoabsorption layer…

Applied Physics Letters, 2008, 93 (6), pp.063509. ⟨10.1063/1.2971204⟩. ⟨hal-00580735⟩