Publications

• Communication dans un congrès

Selective etching of implanted silicon dioxide in hydrofluoric acid

V. Passi, Aurélie Lecestre, Emmanuel Dubois, J.P. Raskin

34th International Conference on Micro and Nano Engineering, MNE 2008, 2008, Athens, Greece. ⟨hal-00361548⟩

• Communication dans un congrès

An optically powered radio over fiber remote unit using wavelength division multiplexing

D. Wake, C. Lethien, C. Sion, Jean-Pierre Vilcot, N.J. Gomes

IEEE Topical Meeting on Microwave Photonics joint with Asia-Pacific Microwave Photonics Conference, IEEE MWP2008/APMP2008, 2008, Australia. pp.197-200, ⟨10.1109/MWP.2008.4666670⟩. ⟨hal-00360445⟩

• Article dans une revue

Piezoelectric response of PZT nanostructures obtained by focused ion beam

Denis Remiens, Liang Ruihong, David Troadec, D. Deresmes, Caroline Soyer, Antonio Da Costa, Rachel Desfeux

Pb(Zrx,Ti1 - x)O3 (PZT) microscale island (1μm∼ 100nm) was fabricated by Focused Ion Beam (FIB) before and after its crystallization. In the first case the FIB etching is realized on amorphous films and a post annealing treatment, at the crystallization temperature of the PZT films, is necessary to…

Integrated Ferroelectrics, 2008, 100 (1), pp.16-25. ⟨10.1080/10584580802540173⟩. ⟨hal-00800679⟩

• Communication dans un congrès

Small signal and noise equivalent circuit for CMOS 65 nm up to 110 GHz

N. Waldhoff, C. Andrei, D. Gloria, Francois Danneville, Gilles Dambrine

38th European Microwave Conference, EuMC 2008, 2008, Netherlands. pp.321-324, ⟨10.1109/EUMC.2008.4751453⟩. ⟨hal-00362371⟩

• Article dans une revue

Time-resolved interference experiments in a solid state environment

S. Gustavsson, R. Leturcq, M. Studer, T. Ihn, K. Ensslin, D.C. Driscoll, A.C. Gossard

Physica E: Low-dimensional Systems and Nanostructures, 2008, 40, pp.1044-1047. ⟨10.1016/j.physe.2007.09.209⟩. ⟨hal-00357782⟩

• Article dans une revue

Investigation on the emission wavelength of GaInNAs/GaAs strained compressive quantum wells on GaAs substrates

Abdelkader Aissat, Said Nacer, Messaoud Bensebti, Jean-Pierre Vilcot

In this paper, we study the effect of the incorporation of nitrogen in strained GaInAs quantum well structures. We evaluate the influence of nitrogen on the conduction band energy by using the band anticrossing model. The incorporation of nitrogen appears to decrease the bandgap energy and increase…

Microelectronics Journal, 2008, 39, pp.63-66. ⟨10.1016/j.mejo.2007.10.014⟩. ⟨hal-00357304⟩

• Article dans une revue

A comparative study of two non-destructive testing methods to assess near-surface mechanical damage in concrete structures

M. Goueygou, O. Abraham, J.F. Lataste

NDT & E International, 2008, 41, pp.448-456. ⟨10.1016/j.ndteint.2008.03.001⟩. ⟨hal-00356657⟩

• Article dans une revue

Characterization of ultrathin SOI film and application to short channel MOSFETs

Xing Tang, N. Reckinger, G. Larrieu, Emmanuel Dubois, D. Flandre, J.P. Raskin, B. Nysten, A.M. Jonas, V. Bayot

In this study, a very dilute solution (NH4OH:H2O2:H2O 1:8:64 mixture) was employed to reduce the thickness of commercially available SOI wafers down to 3 nm. The etch rate is precisely controlled at 0.11 Å s−1 based on the self-limited etching speed of the solution. The thickness uniformity of the…

Nanotechnology, 2008, 19, pp.165703-1-7. ⟨10.1088/0957-4484/19/16/165703⟩. ⟨hal-00356972⟩

• Ouvrages

Scienze e Religioni. Il ruolo delle scienze naturali, ipotesi di studio e prospettive (Sciences and Religions. The role of natural sciences, study hypotheses and perspectives)

Rafel Pascual, Raffaele Pisano

• Article dans une revue

Integration of PtSi in p-type MOSFETs using a sacrificial low-temperature germanidation process

Nicolas Breil, Emmanuel Dubois, Aomar Halimaoui, Arnaud Pouydebasque, Guilhem Larrieu, Adam Laszcz, J. Ratajcak, Thomas Skotnicki

In this letter, an original selective etching method of Pt with respect to PtSi using a sacrificial low-temperature germanidation process is used for the integration of valence band edge contacts in p-type MOSFET devices. After silicidation annealing, the excess of Pt due to incomplete reaction…

IEEE Electron Device Letters, 2008, 29, pp.152-154. ⟨10.1109/LED.2007.914090⟩. ⟨hal-00356971⟩