Publications

• Communication dans un congrès

Radar system for collision avoidance and target detection in confined areas and subway environment

C. Tatkeu, Fouzia Boukour, Laila Sakkila, Yassin El Hillali, P.G. Deloof, Atika Rivenq, J.P. Ghys

2nd International Conference on Wireless Communications in Underground and Confined Areas, ICWCUCA 2008, 2008, Canada. pp.1-2. ⟨hal-00360435⟩

• Communication dans un congrès

Elaboration de nanofils de silicium sur pointes de tungstène pour caractérisation en sonde atomique et microscopie champ proche

T. Xu, B. Grandidier, J.P. Nys, D. Stiévenard, E. Cadel, R. Larde, P. Pareige

1ères Journées Nanosciences Nord-Ouest, J2NO 2008, 2008, Poitiers, France. ⟨hal-00361980⟩

• Communication dans un congrès

Optoelectronic programming of carbon nanotube devices and circuits

G. Agnus, C. Anghel, W. Zhao, Vincent Derycke, A. Filoramo, Y. Thuillier, S. Lenfant, D. Vuillaume, B. Giffard, C. Gamrat, J.P. Bourgoin

4th International Meeting on Molecular Electronics, ElecMol'08, 2008, Grenoble, France. ⟨hal-00361613⟩

• Communication dans un congrès

Selective etching of implanted silicon dioxide in hydrofluoric acid

V. Passi, Aurélie Lecestre, Emmanuel Dubois, J.P. Raskin

34th International Conference on Micro and Nano Engineering, MNE 2008, 2008, Athens, Greece. ⟨hal-00361548⟩

• Article dans une revue

Piezoelectric response of PZT nanostructures obtained by focused ion beam

Denis Remiens, Liang Ruihong, David Troadec, D. Deresmes, Caroline Soyer, Antonio Da Costa, Rachel Desfeux

Pb(Zrx,Ti1 - x)O3 (PZT) microscale island (1μm∼ 100nm) was fabricated by Focused Ion Beam (FIB) before and after its crystallization. In the first case the FIB etching is realized on amorphous films and a post annealing treatment, at the crystallization temperature of the PZT films, is necessary to…

Integrated Ferroelectrics, 2008, 100 (1), pp.16-25. ⟨10.1080/10584580802540173⟩. ⟨hal-00800679⟩

• Article dans une revue

Power dissipated measurement of an ultrasonic generator in a viscous medium by flowmetric method

Valérie Mancier, Didier Leclercq

Ultrasonics Sonochemistry, 2008, 15, pp.973-980. ⟨10.1016/j.ultsonch.2008.03.005⟩. ⟨hal-00356988⟩

• Article dans une revue

Nonquasi-static large-signal model of GaN FETs through an equivalent voltage approach

Alberto Santarelli, Valeria Di Giacomo, Antonio Raffo, Fabio Filicori, Giorgio Vannini, Raphaël Aubry, Christophe Gaquière

A new empirical nonlinear model of GaN-based electron devices is presented in the article. The model takes into account low-frequency dispersion due to self-heating and charge-trapping phenomena and provides accurate predictions at frequencies where nonquasi-static effects are important. The model…

International Journal of RF and Microwave Computer-Aided Engineering, 2008, 18, pp.507-516. ⟨10.1002/mmce.20326⟩. ⟨hal-00357800⟩

• Article dans une revue

Time-resolved interference experiments in a solid state environment

S. Gustavsson, R. Leturcq, M. Studer, T. Ihn, K. Ensslin, D.C. Driscoll, A.C. Gossard

Physica E: Low-dimensional Systems and Nanostructures, 2008, 40, pp.1044-1047. ⟨10.1016/j.physe.2007.09.209⟩. ⟨hal-00357782⟩

• Article dans une revue

Wet-chemical approach for the halogenation of hydrogenated boron-doped diamond electrodes

Mei Wang, Manash R. Das, Vera G. Praig, François Lenormand, Musen Li, Rabah Boukherroub, Sabine Szunerits

Brominated and chlorinated boron-doped diamond electrodes were prepared through a radical substitution reaction and reacted further with alkyl-Grignard reagents.

Chemical Communications, 2008, 47, pp. 6294-6296. ⟨10.1039/b810975c⟩. ⟨hal-00417517⟩

• Article dans une revue

Investigation on the emission wavelength of GaInNAs/GaAs strained compressive quantum wells on GaAs substrates

Abdelkader Aissat, Said Nacer, Messaoud Bensebti, Jean-Pierre Vilcot

In this paper, we study the effect of the incorporation of nitrogen in strained GaInAs quantum well structures. We evaluate the influence of nitrogen on the conduction band energy by using the band anticrossing model. The incorporation of nitrogen appears to decrease the bandgap energy and increase…

Microelectronics Journal, 2008, 39, pp.63-66. ⟨10.1016/j.mejo.2007.10.014⟩. ⟨hal-00357304⟩