Publications

• Article dans une revue

Integrated 3D silicon electrodes for electrochemical sensing in microfluidic environments : application to single cell characterization

V. Senez, E. Lennon, S. Ostrovidov, T. Yamamoto, H. Fujita, Y. Sakai, T. Fujii

IEEE Sensors Journal, 2008, 8, pp.548-557. ⟨10.1109/JSEN.2008.918948⟩. ⟨hal-00356897⟩

• Article dans une revue

High-efficiency uni-travelling-carrier photomixer at 1.55 μm and spectroscopy application up to 1.4 THz

Alexandre Beck, Guillaume Ducournau, Mohammed Zaknoune, Emilien Peytavit, Tahsin Akalin, Jean-Francois Lampin, Francis Mollot, Francis Hindle, Chun Yang, Gaël Mouret

The fabrication of InGaAs/InP uni-travelling-carrier photodiodes integrated with broadband horn antennas and demonstration of photomixing up to 1.8 THz are reported. A radiated power of 1.1 µW at 940 GHz was measured for a photocurrent of only 2.75 mA (50 mW optical power), demonstrating the high…

Electronics Letters, 2008, 44, pp.1320-1322. ⟨10.1049/el:20082219⟩. ⟨hal-00356950⟩

• Communication dans un congrès

An all-digital delta-sigma RF signal generator for mobile communication transmitters in 90nm CMOS

A. Frappe, B. Stefanelli, A. Flament, A. Kaiser, A. Cathelin

IEEE Radio Frequency Integrated Circuits Symposium, IEEE RFIC 2008, 2008, Atlanta, GA,, United States. pp.13-16, ⟨10.1109/RFIC.2008.4561375⟩. ⟨hal-00360804⟩

• Article dans une revue

Comparative Sb and As segregation at the InP on GaAsSb interface

X. Wallart, S. Godey, Y. Douvry, L. Desplanque

Applied Physics Letters, 2008, 93, pp.123119-1-3. ⟨10.1063/1.2991299⟩. ⟨hal-00356947⟩

• Article dans une revue

Modelling of bulk acoustic wave devices built on piezoelectric stack structures : impedance matrix analysis and network representation

Victor Y. Zhang, Bertrand Dubus, Jean-Etienne Lefebvre, Tadeusz Gryba

The fundamental electro-acoustic properties of a solid layer are deduced in terms of its impedance matrix (Z) and represented by a network for modeling the bulk acoustic wave devices built on piezoelectric stacked structures. A piezoelectric layer is described by a three-port equivalent network, a…

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2008, 55 (3), pp.704-716. ⟨10.1109/TUFFC.2008.695⟩. ⟨hal-00360089⟩

• Autre publication scientifique

Elaboration et caractérisations de films ferroélectriques relaxeurs de PMN-PT : intégration sur silicium et applications MEMS

M. Detalle

2008. ⟨hal-00362347⟩

• Chapitre d'ouvrage

Electronic properties of organic monolayers and molecular devices

D. Vuillaume

Deleonibus S. Electronic device architectures for the NANO-CMOS era - From ultimate CMOS scaling to beyond CMOS devices, Pan Stanford Publishing, pp.299-331, 2008. ⟨hal-00362364⟩

• Article dans une revue

Resistivity and surface states density of n and p type silicon nanowires

Francois Vaurette, J.P. Nys, D. Deresmes, B. Grandidier, D. Stiévenard

Journal of Vacuum Science and Technology, 2008, 26, pp.945-948. ⟨10.1116/1.2908438⟩. ⟨hal-00357381⟩

• Communication dans un congrès

Molecular dynamics simulation of the recrystallization of disordered Si layers

E. Lampin, Christophe Krzeminski

Workshop SiMaDes-II, Atomic scale simulations and experimental studies of disordered systems, 2008, Grenoble, France. ⟨hal-00361542⟩

• Communication dans un congrès

Organometallic synthesis and characterization of spherical PbSe nanocrystals (NCs)

Justin Habinshuti, S. Turrell, O. Robbe-Cristini, B. Grandidier, C. Kinowski

Ecole thématique ‘Croissance de nano-objets métalliques et semi-conducteurs dans des matrices diélectriques destinées aux applications optiques', 2008, Villeneuve d'Ascq, France. ⟨hal-00361982⟩