Publications

• Article dans une revue

Intrinsic current gain cutoff frequency of 30 GHz with carbon nanotube transistors

A. Le Louarn, F. Kapche, Jean-Marc Bethoux, Henri Happy, Gilles Dambrine, Vincent Derycke, Pascale Chenevier, N. Izard, M. F. Goffman, Jean-Philippe Bourgoin

High frequency capabilities of carbon nanotube field-effect transistors (CNTFETs) are investigated. Structures with a large number of single-walled carbon nanotubes were fabricated using dielecrophoresis to increase the density of nanotubes in the device channel. The authors obtained an intrinsic…

Applied Physics Letters, 2007, 90, pp.233108-1-3. ⟨10.1063/1.2743402⟩. ⟨hal-00255760⟩

• Communication dans un congrès

Réalisation de grille nitrure de longueur inférieure à 100nm pour des applications haute fréquence de HEMTs AlGaN/GaN

S. Boulay, Virginie Hoel, S. Touati, E. Delos, Christophe Gaquière, Jean-Claude de Jaeger, M.A. Poisson, S. Delage, Y. Cordier

15èmes Journées Nationales Microondes, JNM 2007, 2007, France. pp.5C1-1-4. ⟨hal-00370327⟩

• Communication dans un congrès

Mesure de signaux réfléchis de faible amplitude dans un canal multitrajet

Michael Bocquet, Christophe Loyez, A. Benlarbi-Delaï

15èmes Journées Nationales Microondes, JNM 2007, 2007, France. pp.4D14-1-4. ⟨hal-00370305⟩

• Article dans une revue

New flowmetric measurement methods of power dissipated by an ultrasonic generator in aqueus medium

Valérie Mancier, Didier Leclercq

Ultrasonics Sonochemistry, 2007, 14, pp.99-106. ⟨10.1016/j.ultsonch.2006.03.004⟩. ⟨hal-00255844⟩

• Article dans une revue

Application of the FDTD method to determine complex permittivity of dielectric materials at microwave frequencies using a rectangular waveguide

J. Terhzaz, H. Ammor, A. Assir, A. Mamouni

A new measurement technique is presented to determine the complex permittivity of a dielectric material. The dielectric sample is loaded in a short-circuited rectangular waveguide. The reflection coefficient of the waveguide is measured by Network analyzer and calculated as a function of the…

Microwave and Optical Technology Letters, 2007, 49, pp.1964-1968. ⟨10.1002/mop.22611⟩. ⟨hal-00255766⟩

• Article dans une revue

Another approach for partial parallel interference cancellation

M. Moussaoui, M. Zaizouni, Jean-Michel Rouvaen

Wireless Personal Communications, 2007, 42, pp.587-606. ⟨10.1007/s11277-006-9213-8⟩. ⟨hal-00283516⟩

• Article dans une revue

Structural investigation of TbCo2/Fe magnetostrictive thin films by tomographic atom probe and Mössbauer spectrometry

A. Grenier, R. Lardé, E. Cadel, J.M. Le Breton, J. Juraszek, F. Vurpillot, Nicolas Tiercelin, Philippe Pernod, J. Teillet

Journal of Magnetism and Magnetic Materials, 2007, 310, pp.2215-2216. ⟨10.1016/j.jmmm.2006.10.1102⟩. ⟨hal-00285631⟩

• Article dans une revue

Covalent functionalization of silicon nitride surfaces by semicarbazide group

Yannick Coffinier, Rabah Boukherroub, X. Wallart, J.P. Nys, J.O. Durand, D. Stiévenard, B. Grandidier

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2007, 601, pp.5492-5498. ⟨10.1016/j.susc.2007.09.017⟩. ⟨hal-00283127⟩

• Article dans une revue

Selective filtering of confined optical waves in a straight waveguide coupled to a lateral stub

Yan Pennec, Maxime Beaugeois, Bahram Djafari-Rouhani, Abdellatif Akjouj, Jerome O. Vasseur, L. Dobrzynski, Jean-Pierre Vilcot, Mohamed Bouazaoui, J.P. Vigneron

We report numerical simulations, based on a finite difference time domain (FDTD) method, of light propagation in two-dimensional semiconductor micro optical waveguides coupled to one or several lateral stubs. The incident wave which is of transverse magnetic polarization (TM) is either…

Journal of Optics A: Pure and Applied Optics, 2007, 9, pp.S431-S436. ⟨10.1088/1464-4258/9/9/S25⟩. ⟨hal-00285664⟩

• Article dans une revue

In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD

Marie-Antoinette Di Forte-Poisson, Nicolas Sarazin, M. Magis, Maurice Tordjman, Erwan Morvan, Raphaël Aubry, J. Di Persio, Bertrand Grimbert

This paper reports on in situ passivation studies of GaAlN/GaN High electron mobility transistors (HEMT) structures grown by low-pressure metalorganic vapour phase epitaxy (LP-MOVPE) on sapphire and silicon carbide substrates. GaN, GaAlN, AlN and AlN/GaN superlattice (SL) layers have been deposited…

Journal of Crystal Growth, 2007, 298, pp.826-830. ⟨10.1016/j.jcrysgro.2006.10.193⟩. ⟨hal-00285680⟩