Publications

• Article dans une revue

Thermo-opto-mechanical properties of AlN nanostructures : a promising material for NEMS applications

G. Guisbiers, L. Buchaillot

Journal of Physics D: Applied Physics, 2008, 41, pp.172001-1-4. ⟨10.1088/0022-3727/41/17/172001⟩. ⟨hal-00357283⟩

• Article dans une revue

Sagittal acoustic waves in finite solid-fluid superlattices: band-gap structure, surface and confined modes, and omnidirectional reflection and selective transmission

Y. El Hassouani, E.H. El Boudouti, Bahram Djafari-Rouhani, H. Aynaou

Using a Green’s function method, we present a comprehensive theoretical analysis of the propagation of sagittal acoustic waves in superlattices (SLs) made of alternating elastic solid and ideal fluid layers. This structure may exhibit very narrow pass bands separated by large stop bands. In…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 78, pp.174306-1-23. ⟨10.1103/PhysRevB.78.174306⟩. ⟨hal-00357386⟩

• Communication dans un congrès

Acoustical properties characterization of a composite made of SU-8 and nanoparticules for BioMEMS application

Julien Carlier, Pierre Campistron, Dorothée Debavelaere-Callens, Caroline Soyer, Bertrand Nongaillard, S. Wang, X. Zhao

The photoresist SU‐8 (often used in microtechnology) has been acoustically characterized at the frequency of 1 GHz thanks to ZnO transducers. This material will be used to achieve acoustical matching between silicon and water at this frequency and a gain of about 5 dB has been obtained using the…

Second ASA-EAA Joint Conference, ACOUSTICS'08, 2008, Paris, France. pp.4979-4983, ⟨10.1121/1.2934923⟩. ⟨hal-00361158⟩

• Communication dans un congrès

Piezoelectric characteristics of metal ferroelectric metal structure on indium tin oxide coated silicon and glass substrate by sputtering

El Hadj Dogheche, L. Kerkache, D. Jenkins, P. Roussel

20th International Symposium on Integrated Ferroelectrics, ISIF 2008, 2008, Singapour, Singapore. ⟨hal-00811724⟩

• Article dans une revue

Integration of PtSi in p-type MOSFETs using a sacrificial low-temperature germanidation process

Nicolas Breil, Emmanuel Dubois, Aomar Halimaoui, Arnaud Pouydebasque, Guilhem Larrieu, Adam Laszcz, J. Ratajcak, Thomas Skotnicki

In this letter, an original selective etching method of Pt with respect to PtSi using a sacrificial low-temperature germanidation process is used for the integration of valence band edge contacts in p-type MOSFET devices. After silicidation annealing, the excess of Pt due to incomplete reaction…

IEEE Electron Device Letters, 2008, 29, pp.152-154. ⟨10.1109/LED.2007.914090⟩. ⟨hal-00356971⟩

• Article dans une revue

Structural and electrical properties of Au and Ti/Au contacts to n-type GaN

L. Dobos, B. Pecz, L. Toth, Z.J. Horvath, Z.E. Horvath, B. Beaumont, Z. Bougrioua

Vacuum, 2008, 82, pp.794-798. ⟨10.1016/j.vacuum.2007.11.005⟩. ⟨hal-00356985⟩

• Article dans une revue

Multilevel modeling of the influence of surface transport peculiarities on growth, shaping, and doping of Si nanowires

A. Efremov, A. Klimovskaya, I. Prokopenko, Y. Moklyak, D. Hourlier

Physica E: Low-dimensional Systems and Nanostructures, 2008, 40, pp.2446-2453. ⟨10.1016/j.physe.2008.01.015⟩. ⟨hal-00356959⟩

• Article dans une revue

Characterization of nanogap chemical reactivity using peptide-capped gold nanoparticles and electrical detection

L. Marcon, D. Stievenard, O. Melnyk

Bioconjugate Chemistry, 2008, 19, pp.802-805. ⟨10.1021/bc8000084⟩. ⟨hal-00357336⟩

• Article dans une revue

Study of the hBN/InP interface by deep level transient and photoluminescence spectroscopies

M. Mattalah, A. Telia, A. Soltani, Jean-Claude de Jaeger, P. Thevenin, A. Bath, B. Akkal, H. Abid

Thin Solid Films, 2008, 516, pp.4122-4127. ⟨10.1016/j.tsf.2007.10.009⟩. ⟨hal-00357796⟩

• Communication dans un congrès

Molecular dynamics simulation of the recrystallization of disordered Si layers

E. Lampin, Christophe Krzeminski

Workshop SiMaDes-II, Atomic scale simulations and experimental studies of disordered systems, 2008, Grenoble, France. ⟨hal-00361542⟩