Publications

• Communication dans un congrès

Electromagnetic actuation based on MEMS technology for tactile display

J. Streque, Abdelkrim Talbi, Philippe Pernod, Vladimir Preobrazhensky

6th International EuroHaptics Conference, EuroHaptics 2008, 2008, Spain. pp.437-446. ⟨hal-00360396⟩

• Communication dans un congrès

High-voltage HBTs compatible with high-speed SiGe BiCMOS technology

B. Geynet, P. Chevalier, S. Chouteau, G. Avenier, T. Schwartzmann, D. Gloria, Gilles Dambrine, Francois Danneville, A. Chantre

8th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2008, 2008, United States. pp.210-213, ⟨10.1109/SMIC.2008.59⟩. ⟨hal-00360406⟩

• Article dans une revue

Evidence of electron-phonon interaction on transport in n- and p-type silicon nanowires

Francois Vaurette, R. Leturcq, J.P. Nys, D. Deresmes, B. Grandidier, D. Stievenard

Applied Physics Letters, 2008, 92, pp.242109-1-3. ⟨10.1063/1.2949072⟩. ⟨hal-00357349⟩

• Article dans une revue

Hysteretic magnetotransport in p-type AlxGa1-xAs heterostructures with In/Zn/Au ohmic contacts

B. Grbic, R. Leturcq, T. Ihn, K. Ensslin, G. Blatter, D. Reuter, A.D. Wieck

The two-terminal magneto-conductance of a hole gas in C-doped AlGaAs/GaAs heterostructures with ohmic contacts consisting of alloyed In/Zn/Au displays a pronounced hysteresis of the conductance around zero magnetic field. The hysteresis disappears above magnetic fields of around 0.5 T and…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77, pp.245307-1-4. ⟨10.1103/PhysRevB.77.245307⟩. ⟨hal-00357350⟩

• Article dans une revue

Electrical characterization and small-signal modeling of InAs/AlSb HEMTs for low-noise and high-frequency applications

M. Malmkvist, E. Lefebvre, M. Borg, L. Desplanque, X. Wallart, Gilles Dambrine, S. Bollaert, J. Grahn

IEEE Transactions on Microwave Theory and Techniques, 2008, 56, pp.2685-2691. ⟨10.1109/TMTT.2008.2006798⟩. ⟨hal-00376223⟩

• Article dans une revue

Time-resolved interference experiments in a solid state environment

S. Gustavsson, R. Leturcq, M. Studer, T. Ihn, K. Ensslin, D.C. Driscoll, A.C. Gossard

Physica E: Low-dimensional Systems and Nanostructures, 2008, 40, pp.1044-1047. ⟨10.1016/j.physe.2007.09.209⟩. ⟨hal-00357782⟩

• Article dans une revue

Investigation on the emission wavelength of GaInNAs/GaAs strained compressive quantum wells on GaAs substrates

Abdelkader Aissat, Said Nacer, Messaoud Bensebti, Jean-Pierre Vilcot

In this paper, we study the effect of the incorporation of nitrogen in strained GaInAs quantum well structures. We evaluate the influence of nitrogen on the conduction band energy by using the band anticrossing model. The incorporation of nitrogen appears to decrease the bandgap energy and increase…

Microelectronics Journal, 2008, 39, pp.63-66. ⟨10.1016/j.mejo.2007.10.014⟩. ⟨hal-00357304⟩

• Article dans une revue

A comparative study of two non-destructive testing methods to assess near-surface mechanical damage in concrete structures

M. Goueygou, O. Abraham, J.F. Lataste

NDT & E International, 2008, 41, pp.448-456. ⟨10.1016/j.ndteint.2008.03.001⟩. ⟨hal-00356657⟩

• Article dans une revue

Electromagnetic compatibility analysis of unstructured mains networks for high-speed data transmission : part 2

S. Battermann, H. Garbe, F. Silva, M. Pous, V. Beauvois, K. Vantomme, J. Catrysse, J. Newbury, Virginie Degardin, M. Liénard, Pierre Degauque, I.D. Flintoft, A.D. Papatsoris, D.W. Welsh, A.C. Marvin

IET Science Measurement & Technology, 2008, 2, pp.154-159. ⟨10.1049/iet-smt:20070056⟩. ⟨hal-00360049⟩

• Article dans une revue

Nonquasi-static large-signal model of GaN FETs through an equivalent voltage approach

Alberto Santarelli, Valeria Di Giacomo, Antonio Raffo, Fabio Filicori, Giorgio Vannini, Raphaël Aubry, Christophe Gaquière

A new empirical nonlinear model of GaN-based electron devices is presented in the article. The model takes into account low-frequency dispersion due to self-heating and charge-trapping phenomena and provides accurate predictions at frequencies where nonquasi-static effects are important. The model…

International Journal of RF and Microwave Computer-Aided Engineering, 2008, 18, pp.507-516. ⟨10.1002/mmce.20326⟩. ⟨hal-00357800⟩