Publications

• Communication dans un congrès

Caractérisation de cellules biologiques par BioMEMS THz

A. Treizebre, Bertrand Bocquet

Actes des 10èmes Journées Nationales du Réseau Doctoral en Microélectronique, JNRDM, 2007, Lille, France. ⟨hal-00362684⟩

• Article dans une revue

Two types of modes in finite size one-dimensional coaxial photonic crystals : general rules and experimental evidence

E.H. El Boudouti, Y. El Hassouani, Bahram Djafari-Rouhani, H. Aynaou

We demonstrate analytically and experimentally the existence and behavior of two types of modes in finite size one-dimensional coaxial photonic crystals made of N cells with vanishing magnetic field on both sides. We highlight the existence of N−1 confined modes in each band and one mode by gap…

Physical Review E : Statistical, Nonlinear, and Soft Matter Physics [2001-2015], 2007, 76, pp.026607/1-9. ⟨10.1103/PhysRevE.76.026607⟩. ⟨hal-00283161⟩

• Chapitre d'ouvrage

Techniques de mesure en compatibilité électromagnétique

L. Kone

Compatibilité électromagnétique : des concepts de base aux applications, Hermès-Lavoisier, volume 2, chapitre 2, 107-216, 2007. ⟨hal-00362389⟩

• Article dans une revue

Another approach for partial parallel interference cancellation

M. Moussaoui, M. Zaizouni, Jean-Michel Rouvaen

Wireless Personal Communications, 2007, 42, pp.587-606. ⟨10.1007/s11277-006-9213-8⟩. ⟨hal-00283516⟩

• Article dans une revue

Application of the FDTD method to determine complex permittivity of dielectric materials at microwave frequencies using a rectangular waveguide

J. Terhzaz, H. Ammor, A. Assir, A. Mamouni

A new measurement technique is presented to determine the complex permittivity of a dielectric material. The dielectric sample is loaded in a short-circuited rectangular waveguide. The reflection coefficient of the waveguide is measured by Network analyzer and calculated as a function of the…

Microwave and Optical Technology Letters, 2007, 49, pp.1964-1968. ⟨10.1002/mop.22611⟩. ⟨hal-00255766⟩

• Communication dans un congrès

Bragg Grating (BG) structures and slow-light approach for the processing of RF signals over large bandwidths

M. Kaba, F.C. Zhou, A. Lim, Didier Decoster, J.P. Huignard, S. Tonda, D. Dolfi, J. Chazelas

IEEE International Topical Meeting on Microwave Photonics, MWP 2007, 2007, Canada. pp.206-209, ⟨10.1109/MWP.2007.4378174⟩. ⟨hal-00284395⟩

• Article dans une revue

Covalent functionalization of silicon nitride surfaces by semicarbazide group

Yannick Coffinier, Rabah Boukherroub, X. Wallart, J.P. Nys, J.O. Durand, D. Stiévenard, B. Grandidier

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2007, 601, pp.5492-5498. ⟨10.1016/j.susc.2007.09.017⟩. ⟨hal-00283127⟩

• Article dans une revue

Structural investigation of TbCo2/Fe magnetostrictive thin films by tomographic atom probe and Mössbauer spectrometry

A. Grenier, R. Lardé, E. Cadel, J.M. Le Breton, J. Juraszek, F. Vurpillot, Nicolas Tiercelin, Philippe Pernod, J. Teillet

Journal of Magnetism and Magnetic Materials, 2007, 310, pp.2215-2216. ⟨10.1016/j.jmmm.2006.10.1102⟩. ⟨hal-00285631⟩

• Article dans une revue

Selective filtering of confined optical waves in a straight waveguide coupled to a lateral stub

Yan Pennec, Maxime Beaugeois, Bahram Djafari-Rouhani, Abdellatif Akjouj, Jerome O. Vasseur, L. Dobrzynski, Jean-Pierre Vilcot, Mohamed Bouazaoui, J.P. Vigneron

We report numerical simulations, based on a finite difference time domain (FDTD) method, of light propagation in two-dimensional semiconductor micro optical waveguides coupled to one or several lateral stubs. The incident wave which is of transverse magnetic polarization (TM) is either…

Journal of Optics A: Pure and Applied Optics, 2007, 9, pp.S431-S436. ⟨10.1088/1464-4258/9/9/S25⟩. ⟨hal-00285664⟩

• Article dans une revue

In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD

Marie-Antoinette Di Forte-Poisson, Nicolas Sarazin, M. Magis, Maurice Tordjman, Erwan Morvan, Raphaël Aubry, J. Di Persio, Bertrand Grimbert

This paper reports on in situ passivation studies of GaAlN/GaN High electron mobility transistors (HEMT) structures grown by low-pressure metalorganic vapour phase epitaxy (LP-MOVPE) on sapphire and silicon carbide substrates. GaN, GaAlN, AlN and AlN/GaN superlattice (SL) layers have been deposited…

Journal of Crystal Growth, 2007, 298, pp.826-830. ⟨10.1016/j.jcrysgro.2006.10.193⟩. ⟨hal-00285680⟩