Publications

• Article dans une revue

Low-temperature-grown GaAs : modeling of transient reflectivity experiments

V. Ortiz, J. Nagle, Jean-Francois Lampin, Emmanuel Peronne, Antigoni Alexandrou

Journal of Applied Physics, 2007, 102, pp.043515-1-9. ⟨10.1063/1.2763971⟩. ⟨hal-00283048⟩

• Article dans une revue

Characteristics of Al2O3/AllnN/GaN MOSHEMT

F Medjdoub, N. Sarazin, M. Tordjman, M. Magis, M.A. Di Forte-Poisson, M. Knez, E. Delos, Christophe Gaquière, S.L. Delage, E. Kohn

Electronics Letters, 2007, 43, pp.691-692. ⟨10.1049/el:20070425⟩. ⟨hal-00283495⟩

• Article dans une revue

A blind modulation type detector for DPRS standard

Iyad Dayoub, A. Okassa-M'Foubat, R. Mvone, Jean-Michel Rouvaen

Wireless Personal Communications, 2007, 41, pp.225-241. ⟨10.1007/s11277-006-9140-8⟩. ⟨hal-00283515⟩

• Article dans une revue

Multiple description wavelet-based image coding using correlating transforms

K. Khelil, R.E.H. Bekka, A. Djebari, Jean-Michel Rouvaen

AEU. International Journal of Electronics and Communications, 2007, 61, pp.411-417. ⟨10.1016/j.aeue.2006.07.003⟩. ⟨hal-00283518⟩

• Article dans une revue

Piezoelectric evaluation of ion beam etched Pb(Zr,Ti)O3 thin films by piezoresponse force microscopy

C. Legrand, A. da Costa, R. Desfeux, Caroline Soyer, Denis Remiens

Applied Surface Science, 2007, 253, pp.4942-4946. ⟨10.1016/j.apsusc.2006.10.076⟩. ⟨hal-00283057⟩

• Article dans une revue

Growth mechanism of organic nanocrystals on passivated semiconductor surfaces

Francois Vaurette, J.P. Nys, B. Grandidier, C. Priester, D. Stiévenard

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75, pp.235435-1-6. ⟨10.1103/PhysRevB.75.235435⟩. ⟨hal-00283122⟩

• Article dans une revue

Quick planarisation based on hydrogen silsesquioxane (HSQ) for deep etched InP based structures

Malek Zegaoui, Joseph Harari, Nargess Choueib, V. Magnin, Didier Decoster

The ability of HSQ resist films to planarise active deep etched (1.5-2m) InP based structures with electrodes is demonstrated for the first time. Vertically etched III-V semiconductor devices require planarisation of the passivation material for metal interconnections and device integration. A new…

Electronics Letters, 2007, 43 (22), pp.1234-1236. ⟨10.1049/el:20071889⟩. ⟨hal-00283081⟩

• Article dans une revue

Multi-coaxial cylindrical inclusions in locally resonant phononic crystals

H. Larabi, Yan Pennec, Bahram Djafari-Rouhani, Jerome O. Vasseur

Physical Review E : Statistical, Nonlinear, and Soft Matter Physics [2001-2015], 2007, 75, pp.066601/1-8. ⟨10.1103/PhysRevE.75.066601⟩. ⟨hal-00283160⟩

• Article dans une revue

Composition and size-dependent extinction coefficient of colloidal PbSe quantum dots

Iwan Moreels, Karel Lambert, David de Muynck, Frank Vanhaecke, Dirk Poelman, José C Martins, Guy Allan, Zeger Hens

Inductively coupled plasma mass spectrometry (ICP-MS) was combined with UV–vis−NIR spectrophotometry and transmission electron microscopy to determine the nanocrystal composition and molar extinction coefficient ϵ of colloidal PbSe quantum dot (Q-PbSe) suspensions. The ICP-MS results show a…

Chemistry of Materials, 2007, 19, pp.6101-6106. ⟨10.1021/cm071410q⟩. ⟨hal-00283128⟩

• Article dans une revue

Uncovering forbidden optical transitions in PbSe nanocrystals

Jeffrey J. Peterson, Huang Libai, Christophe Delerue, Guy Allan, Todd D. Krauss

The 1Sh,e−1Pe,h exciton transition energy of PbSe nanocrystals was determined via two-photon photoluminescence excitation spectroscopy and was found to be in good agreement with predictions from a tight-binding calculation. The two-photon excitation peak occurs at energies very close to a strong…

Nano Letters, 2007, 7, pp.3827-3831. ⟨10.1021/nl072487g⟩. ⟨hal-00283185⟩