Publications

• Article dans une revue

Intrinsic current gain cutoff frequency of 30 GHz with carbon nanotube transistors

A. Le Louarn, F. Kapche, Jean-Marc Bethoux, Henri Happy, Gilles Dambrine, Vincent Derycke, Pascale Chenevier, N. Izard, M. F. Goffman, Jean-Philippe Bourgoin

High frequency capabilities of carbon nanotube field-effect transistors (CNTFETs) are investigated. Structures with a large number of single-walled carbon nanotubes were fabricated using dielecrophoresis to increase the density of nanotubes in the device channel. The authors obtained an intrinsic…

Applied Physics Letters, 2007, 90, pp.233108-1-3. ⟨10.1063/1.2743402⟩. ⟨hal-00255760⟩

• Article dans une revue

In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD

Marie-Antoinette Di Forte-Poisson, Nicolas Sarazin, M. Magis, Maurice Tordjman, Erwan Morvan, Raphaël Aubry, J. Di Persio, Bertrand Grimbert

This paper reports on in situ passivation studies of GaAlN/GaN High electron mobility transistors (HEMT) structures grown by low-pressure metalorganic vapour phase epitaxy (LP-MOVPE) on sapphire and silicon carbide substrates. GaN, GaAlN, AlN and AlN/GaN superlattice (SL) layers have been deposited…

Journal of Crystal Growth, 2007, 298, pp.826-830. ⟨10.1016/j.jcrysgro.2006.10.193⟩. ⟨hal-00285680⟩

• Article dans une revue

Structural investigation of TbCo2/Fe magnetostrictive thin films by tomographic atom probe and Mössbauer spectrometry

A. Grenier, R. Lardé, E. Cadel, J.M. Le Breton, J. Juraszek, F. Vurpillot, Nicolas Tiercelin, Philippe Pernod, J. Teillet

Journal of Magnetism and Magnetic Materials, 2007, 310, pp.2215-2216. ⟨10.1016/j.jmmm.2006.10.1102⟩. ⟨hal-00285631⟩

• Article dans une revue

Selective filtering of confined optical waves in a straight waveguide coupled to a lateral stub

Yan Pennec, Maxime Beaugeois, Bahram Djafari-Rouhani, Abdellatif Akjouj, Jerome O. Vasseur, L. Dobrzynski, Jean-Pierre Vilcot, Mohamed Bouazaoui, J.P. Vigneron

We report numerical simulations, based on a finite difference time domain (FDTD) method, of light propagation in two-dimensional semiconductor micro optical waveguides coupled to one or several lateral stubs. The incident wave which is of transverse magnetic polarization (TM) is either…

Journal of Optics A: Pure and Applied Optics, 2007, 9, pp.S431-S436. ⟨10.1088/1464-4258/9/9/S25⟩. ⟨hal-00285664⟩

• Article dans une revue

Covalent functionalization of silicon nitride surfaces by semicarbazide group

Yannick Coffinier, Rabah Boukherroub, X. Wallart, J.P. Nys, J.O. Durand, D. Stiévenard, B. Grandidier

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2007, 601, pp.5492-5498. ⟨10.1016/j.susc.2007.09.017⟩. ⟨hal-00283127⟩

• Article dans une revue

New flowmetric measurement methods of power dissipated by an ultrasonic generator in aqueus medium

Valérie Mancier, Didier Leclercq

Ultrasonics Sonochemistry, 2007, 14, pp.99-106. ⟨10.1016/j.ultsonch.2006.03.004⟩. ⟨hal-00255844⟩

• Article dans une revue

Characteristics of Al2O3/AllnN/GaN MOSHEMT

F Medjdoub, N. Sarazin, M. Tordjman, M. Magis, M.A. Di Forte-Poisson, M. Knez, E. Delos, Christophe Gaquière, S.L. Delage, E. Kohn

Electronics Letters, 2007, 43, pp.691-692. ⟨10.1049/el:20070425⟩. ⟨hal-00283495⟩

• Article dans une revue

A blind modulation type detector for DPRS standard

Iyad Dayoub, A. Okassa-M'Foubat, R. Mvone, Jean-Michel Rouvaen

Wireless Personal Communications, 2007, 41, pp.225-241. ⟨10.1007/s11277-006-9140-8⟩. ⟨hal-00283515⟩

• Article dans une revue

Growth mechanism of organic nanocrystals on passivated semiconductor surfaces

Francois Vaurette, J.P. Nys, B. Grandidier, C. Priester, D. Stiévenard

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75, pp.235435-1-6. ⟨10.1103/PhysRevB.75.235435⟩. ⟨hal-00283122⟩

• Article dans une revue

Quick planarisation based on hydrogen silsesquioxane (HSQ) for deep etched InP based structures

Malek Zegaoui, Joseph Harari, Nargess Choueib, V. Magnin, Didier Decoster

The ability of HSQ resist films to planarise active deep etched (1.5-2m) InP based structures with electrodes is demonstrated for the first time. Vertically etched III-V semiconductor devices require planarisation of the passivation material for metal interconnections and device integration. A new…

Electronics Letters, 2007, 43 (22), pp.1234-1236. ⟨10.1049/el:20071889⟩. ⟨hal-00283081⟩