Publications

• Article dans une revue

Transport limitations and Schottky barrier height in titanium silicide nanowires grown on the Si(111) surface

T. Soubiron, R. Stiufiuc, L. Patout, D. Deresmes, B. Grandidier, D. Stievenard, J. Köble, M. Maier

Applied Physics Letters, 2007, 90 (10), pp.102112-1-3. ⟨10.1063/1.2711378⟩. ⟨hal-01790106⟩

• Brevet

Microelectromechanical device packaging with an anchored cap and its manufacture

Clément Charbuillet, Laurent Gosset

Unknown Region, Patent n° : WO2007022978 (A1) 2007-03-01. 2007, N° de priorité : EP20050291789 20050826 - N° de demande : WO2006EP08307 20060824. ⟨hal-05839027⟩

• Communication dans un congrès

Représentation modale et analyse statistique du champ électrique dans les CRBM

S. Baranowski, Dominique Lecointe, Michel Cauterman, Bernard Demoulin

Colloque International TELECOM'2007 et 5es Journées Franco-Marocaines des Micro-ondes et leurs Applications (JFMMA), Mar 2007, Fès, Maroc. pp.cd-rom. ⟨hal-00280537⟩

• Article dans une revue

SOI-based nanoelectrospray emitter tips for mass spectrometry: a coupled MEMS and microfluidic design

Bernard Legrand, Alison Ashcroft, Lionel Buchaillot, S. Arscott

Journal of Micromechanics and Microengineering, 2007, 17 (3), pp.509-514. ⟨10.1088/0960-1317/17/3/013⟩. ⟨hal-02347438⟩

• Communication dans un congrès

Combining Internal Probing with Artificial Neural Networks for Optimal RFIC Testing

S. Ellouz, P. Gamand, C. Kelma, B. Vandewiele, Bruno Allard

In order to reduce production costs of RF devices, it is important to remove bad circuits very early in the production flow. It is all the more true for dies designed to be integrated in complex systems. Thus highly efficient RF wafer testing is mandatory for those applications to prevent the loss…

ITC '06, Oct 2006, Santa Clara, CA, United States. pp.1 - 9, ⟨10.1109/TEST.2006.297705⟩. ⟨hal-00369455⟩

• Article dans une revue

Inhibition of interface pollution in AlGaN/GaN HEMT structures regrown on semi-insulating GaN templates

M. Azize, Z. Bougrioua, P. Gibart

AlGaN/GaN high-electron mobility transistors (HEMTs) structures regrown by metalorganic vapour phase epitaxy (MOVPE) on semi-insulating (SI) GaN templates, after exposure to air, results in the presence of parasitic conducting channels at regrowth interface. Air contamination of the SI GaN…

Journal of Crystal Growth, 2007, 299 (1), pp.103-108. ⟨10.1016/j.jcrysgro.2006.10.250⟩. ⟨hal-02906690⟩

• Article dans une revue

Low-Operating-Voltage Organic Transistors Made of Bifunctional Self-Assembled Monolayers

M. Mottaghi, P. Lang, F. Rodriguez, Anna Rumyantseva, Abderrahim Yassar, G. Horowitz, S. Lenfant, D. Tondelier, D. Vuillaume

Self-assembled monolayers (SAMs) are molecular assemblies that spontaneously form on an appropriate substrate dipped into a solution of an active surfactant in an organic solvent. Organic field-effect transistors are described, built on an SAM made of bifunctional molecules comprising a short alkyl…

Advanced Functional Materials, 2007, 17 (4), pp.597-604. ⟨10.1002/adfm.200600179⟩. ⟨hal-00826656⟩

• Article dans une revue

Critical temperatures of 70%Pb(Mg1∕3Nb2∕3)O3–30%PbTiO3 thin films investigated by dielectric, ferroelectric, and structural measurements

X.J. Meng, Denis Remiens, Mickael Detalle, B. Dkhil, Jl. Sun, Jh. Chu

The authors have investigated the temperature dependence of the ferroelectric, dielectric, and structural properties of 70%Pb(Mg1∕3Nb2∕3)O3–30%PbTiO3 thin films. Two critical temperatures were evidenced. The first one occurring around 410K corresponds to the bulk paraelectric-ferroelectric phase…

Applied Physics Letters, 2007, 90 (13), pp.132904. ⟨10.1063/1.2716312⟩. ⟨hal-00176457⟩

• Article dans une revue

Integrated terahertz TEM horn antenna

Emilien Peytavit, Jean-Francois Lampin, Tahsin Akalin, L. Desplanque

A terahertz transverse electromagnetic horn antenna (THz-TEMHA) monolithically integrated on a gallium arsenide substrate has been studied by means of subpicosecond pulses generated and measured on a 50 Ω coplanar waveguide. The measured reflection coefficient is below −10 dB from 100 GHz to about…

Electronics Letters, 2007, 43 (2), pp.73-75. ⟨10.1049/el:20073679⟩. ⟨hal-00255785⟩

• Communication dans un congrès

High-speed SiGe BiCMOS technologies : 120-nm status and end-of-roadmap challenges

P. Chevalier, B. Barbalat, M. Laurens, B. Vandelle, L. Rubaldo, B. Geynet, S.P. Voinigescu, T.O. Dickson, N. Zerounian, S. Chouteau, D. Dutartre, A. Monroy, F. Aniel, Gilles Dambrine, A. Chantre

7th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2007, 2007, United States. pp.18-23, ⟨10.1109/SMIC.2007.322759⟩. ⟨hal-00284032⟩