Publications

• Article dans une revue

The effect of oxidation on physical properties of porous silicon layers for optical applications

Parastesh Pirasteh, Joël Charrier, Ali Soltani, Severine Haesaert, Lazhar Haji, C. Godon, Nicolas Errien

In order to understand the optical loss mechanisms in porous silicon based waveguides, structural and optical studies have been performed. Scanning and transmission electron microscopic observations of porous silicon layers are obtained before and after an oxidation process at high temperature in…

Applied Surface Science, 2006, Vol.253 (Issue 4), pp.1999-2002. ⟨10.1016/j.apsusc.2006.03.083⟩. ⟨hal-00187580⟩

• Communication dans un congrès

Optimizing Resistances and Capacitances of a Continuous-Time Sigma-Delta Modulator

Laurent de Lamarre, Marie-Minerve Louërat, Andreas Kaiser

The integration capacitor is an important issue when being faced with the power consumption of a ΣΔ analog-to-digital converter. In this paper, we show how the integration capacitance can be derived from signal to noise ratio specifications. In order to decrease the total power consumption of the…

ICECS IEEE International Conference on Electronics Circuits and Systems, Dec 2006, Nice, France. pp.419-422, ⟨10.1109/ICECS.2006.379814⟩. ⟨hal-01338469⟩

• Article dans une revue

Raman Imaging and Kelvin Probe Microscopy for the Examination of the Heterogeneity of Doping in Polycrystalline Boron-Doped Diamond Electrodes

Sabine Szunerits, Michel Mermoux, Alexandre Crisci, Bernadette Marcus, Pierre Bouvier, Didier Delabouglise, Jean-Pierre Petit, Sébastien Janel, Rabah Boukherroub, Lilin Tay

The issue of the heterogeneity of boron doping in microcrystalline diamond films was addressed by four different methods: micro-Raman spectroscopy and Raman imaging, Kelvin probe force microscopy, conducting atomic force microscopy, and scanning electrochemical microscopy. The samples were…

Journal of Physical Chemistry B, 2006, 110 (47), pp. 23888-23897. ⟨10.1021/jp064429⟩. ⟨hal-00333541⟩

• Communication dans un congrès

Oxynitride perovskites LaTiOxNy thin films for microwave applications

Ahmed Ziani, Claire Le Paven-Thivet, Laurent Le Gendre, Didier Fasquelle, Jean-Claude Carru, Franck Tessier, Jacques Pinel

Journées Couches Minces Ferroélectriques JCMF 2006 - Rencontre Franco-Ukrainienne de la Ferroélectricité RFUF MEETING 4, Nov 2006, Amiens, France. ⟨hal-00437679⟩

• Brevet

Circuit intégré guide d'ondes

S. Pruvost, J. Roux

N° de brevet: FR2885735 (A1). 2006. ⟨hal-00372351⟩

• Communication dans un congrès

Comparaison de divers actionneurs piézoélectriques dans un système d'amortissement actif

Sami Tliba, Maï Pham-Thi, Anne-Christine Hladky, Bénédicte Bonomi

Matériaux 2006 - Colloque sur les Matériaux Intelligents, Nov 2006, Dijon, France. pp.1173. ⟨hal-00527361⟩

• Article dans une revue

In silico-guided target identification of a scaffold-focused library: 1,3,5-triazepan-2,6-diones as novel phospholipase A2 inhibitors.

Pascal Muller, Gersande Lena, Eric Boilard, Sofiane Bezzine, Gérard Lambeau, Gilles Guichard, Didier Rognan

A collection of 2150 druggable active sites from the Protein Data Bank was screened by high-throughput docking to identify putative targets for five representative molecules of a combinatorial library sharing a 1,3,5-triazepan-2,6-dione scaffold. Five targets were prioritized for experimental…

Journal of Medicinal Chemistry, 2006, 49 (23), pp.6768-78. ⟨10.1021/jm0606589⟩. ⟨hal-00165335⟩

• Article dans une revue

Imaging and controlling electron transport inside a quantum ring

B. Hackens, F. Martins, T. Ouisse, H. Sellier, S. Bollaert, X. Wallart, A. Cappy, Joël Chevrier, V. Bayot, S. Huant

Traditionally, the understanding of quantum transport, coherent and ballistic, relies on the measurement of macroscopic properties such as the conductance. While powerful when coupled to statistical theories, this approach cannot provide a detailed image of "how electrons behave down there…

Nature Physics, 2006, 2, pp.826. ⟨10.1038/nphys459⟩. ⟨hal-00167167⟩

• Article dans une revue

Fabrication and room-temperature single-charging behavior of self-aligned single-dot memory devices

Tang Xiaohui, Nicolas Reckinger, Vincent Bayot, Christophe Krzeminski, Emmanuel Dubois, Alexandre Villaret, Daniel Bensahel

Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room temperature. In order to realize the final single-electron memory…

IEEE Transactions on Nanotechnology, 2006, 5 (6), p. 649. ⟨10.1109/TNANO.2006.883481⟩. ⟨hal-00623277⟩

• Communication dans un congrès

Méthode d’évaluation des perturbations induites sur un faisceau de câbles automobile en hautes fréquences

Guillaume Andrieu, Lamine Koné, Frédéric Bocquet, Bernard Demoulin, J.P. Parmantier

Numélec 06, Nov 2006, Lille, France. ⟨hal-01245814⟩