Publications

• Communication dans un congrès

Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices ?

F Medjdoub, J.F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, D. Ducatteau, Christophe Gaquière, N. Grandjean, E. Kohn

IEEE International Electron Devices Meeting, IEDM 2006, 2006, United States. pp.673-676, ⟨10.1109/IEDM.2006.346935⟩. ⟨hal-00247419⟩

• Article dans une revue

Terahertz detection by GaN/AlGaN transistors

Abdelouahad El Fatimy, Stephane Boubanga Tombet, Frederic Teppe, Wojciech Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, Christophe Gaquière, D. Theron, A. Cappy

Detection of subterahertz and terahertz radiation by high electron mobility GaN/AlGaN transistors in the 0.2-2.5 THz frequency range (much higher than the cutoff frequency of the transistors) is reported. Experiments were performed in the temperature range 4-300 K For the lowest temperatures, a…

Electronics Letters, 2006, 42, pp.1342-1344. ⟨10.1049/cl:20062452⟩. ⟨hal-00540638⟩

• Article dans une revue

Polydimethylsiloxane membranes for millimeter-wave planar ultra flexible antennas

Nicolas Tiercelin, Philippe Coquet, V. Senez, Ronan Sauleau, H. Fujita

Journal of Micromechanics and Microengineering, 2006, 16, pp.2389-2395. ⟨hal-00130875⟩

• Article dans une revue

Preparation and characterizations of Pb(Zr0.53Ti0.47)O3 thick films on LaNiO3 coated Si by modified metallorganic decomposition process

G.S. Wang, Denis Remiens, Caroline Soyer, El Hadj Dogheche, Eric Cattan

Integrated Ferroelectrics, 2006, 80, pp.11-20. ⟨hal-00138744⟩

• Article dans une revue

Design and fabrication of a p-i-n photodiode with high responsivity and large alignment tolerances for 40-Gb/s applications

Mohand Achouche, Vincent Magnin, Joseph Harari, David Carpentier, Estelle Derouin, Christophe Jany, Didier Decoster

This letter demonstrates an evanescently coupled p-i-n photodiode combined with a multimode diluted waveguide using a simple all 2-in InP processing that includes on-wafer mirrors etching and antireflection coating. A high responsivity of 0.81 A/W at 1.55 mum with less than 0.4-dB polarization…

IEEE Photonics Technology Letters, 2006, 18, pp.556-558. ⟨10.1109/LPT.2005.863990⟩. ⟨hal-00138747⟩

• Article dans une revue

Inclusions detection using Lamb waves in flexible printed circuits

Frédéric Jenot, Mohammadi Ouaftouh, Wei-Jiang Xu, Marc Duquennoy, Mohamed Ourak

Ultrasonics, 2006, 44, pp.1163-1167. ⟨hal-00138721⟩

• Article dans une revue

One-bit correlator receiver and averaging-oversampling effects

B. El Khaldi, Jean-Michel Rouvaen, Atika Rivenq, Yassin El Hillali

Digital Signal Processing, 2006, 16, pp.120-136. ⟨hal-00138725⟩

• Autre publication scientifique

Analyse physique et thermique de transistors à effet de champ de la filière GaN. Optimisation de structures pour l'amplification de puissance hyperfréquence

Brahim Benbakhti

2006. ⟨hal-00138923⟩

• Autre publication scientifique

Conception et réalisation de commutateurs MEMS millimétriques pour antennes intelligentes

A. Boé

2006. ⟨hal-00138924⟩

• Communication dans un congrès

Large optimisation of source/drain architecture in double gate CMOS using combined static and transient analysis

Christophe Krzeminski, Emmanuel Dubois

Materials Research Society Spring Meeting, MRS Spring 2006, Transistor Scaling - Methods, Materials, and Modeling, 2006, Moscone West, San-Franscico, CA, United States. ⟨hal-00138694⟩