Publications

• ART

Self assembled monolayers on silicon for molecular electronics

D.K. Aswal, S. Lenfant, David Guérin, J.V. Yakhmi, D. Vuillaume

Analytica Chimica Acta, 2006, 568, pp.84-108. ⟨hal-00127116⟩

• ART

Excitons in boron nitride nanotubes : dimensionality effects

L. Wirtz, A. Marini, A. Rubio

Physical Review Letters, 2006, 96, pp.126104/1-4. ⟨hal-00127833⟩

• ART

Phonon instability in nanocrystalline silicon carbide

F. Cleri, T. Noda

physica status solidi (b), 2006, 243, pp.122-124. ⟨hal-00127852⟩

• ART

Raman spectroscopy of single-wall boron nitride nanotubes

R. Arenal, A.C. Ferrari, S. Reich, L. Wirtz, J.Y. Mevellec, S. Lefrant, A. Rubio, A. Loiseau

Nano Letters, 2006, 6, pp.1812-1816. ⟨hal-00127851⟩

• ART

Electromagnetic wave propagation in quasi-one-dimensional comb-like structures made up of dissipative negative-phase-velocity materials

Gregorio Hernandez-Cocoletzi, L. Dobrzynski, Bahram Djafari-Rouhani, Housni Al-Wahsh, Driss Bria

We study the propagation of electromagnetic waves in infinite lines with grafted finite lines in a frequency regime, where the grafted lines have negative phase velocity. The physical properties of such a structure with negative phase velocity materials have not been investigated before, to the…

Journal of Physics: Condensed Matter, 2006, 18, pp.3683-3690. ⟨10.1088/0953-8984/18/15/014⟩. ⟨hal-00127835⟩

• ART

Langmuir–Blodgett monolayers of InP quantum dots with short chain ligands

K. Lambert, L. Wittebrood, I. Moreels, D. Deresmes, B. Grandidier, Z. Hens

Journal of Colloid and Interface Science, 2006, 15, pp.597. ⟨hal-00127837⟩

• COMM

Homodyne dual six-port network analyzer and associated calibration technique for millimeter wave measurement

Kamel Haddadi, D. Glay, T. Lasri

2006, 4 pp. ⟨hal-00126826⟩

• COMM

Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices ?

F Medjdoub, J.F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, D. Ducatteau, Christophe Gaquière, N. Grandjean, E. Kohn

IEEE International Electron Devices Meeting, IEDM 2006, 2006, United States. pp.673-676, ⟨10.1109/IEDM.2006.346935⟩. ⟨hal-00247419⟩

• ART

Terahertz detection by GaN/AlGaN transistors

Abdelouahad El Fatimy, Stephane Boubanga Tombet, Frederic Teppe, Wojciech Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, Christophe Gaquière, D. Theron, A. Cappy

Detection of subterahertz and terahertz radiation by high electron mobility GaN/AlGaN transistors in the 0.2-2.5 THz frequency range (much higher than the cutoff frequency of the transistors) is reported. Experiments were performed in the temperature range 4-300 K For the lowest temperatures, a…

Electronics Letters, 2006, 42, pp.1342-1344. ⟨10.1049/cl:20062452⟩. ⟨hal-00540638⟩

• ART

Polydimethylsiloxane membranes for millimeter-wave planar ultra flexible antennas

Nicolas Tiercelin, Philippe Coquet, V. Senez, Ronan Sauleau, H. Fujita

Journal of Micromechanics and Microengineering, 2006, 16, pp.2389-2395. ⟨hal-00130875⟩