Publications

• Article dans une revue

Role of impact ionization in multiple exciton generation in PbSe nanocrystals

Guy Allan, Christophe Delerue

In the impact ionization process, a hot carrier relaxes by generating an exciton. We present tight binding calculations showing that the rate of this process in PbSe nanocrystals has a strong energy dependence and that the relaxation energy increases linearly with the carrier excess energy. The…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 73, pp.205423-1-5. ⟨10.1103/PhysRevB.73.205423⟩. ⟨hal-00127843⟩

• Communication dans un congrès

Silicon nanowires for EWOD actuation and matrix-free mass spectrometry analysis

Yannick Coffinier, N. Verplanck, G. Piret, V. Thomy, C. Druon, P. Tabourier, J.C. Camart, Rabah Boukherroub

Journée C'nano Nord Ouest, 2006, Lille, France. ⟨hal-00127822⟩

• Article dans une revue

Fluidics in a nanogap

M. Brinkmann, R. Blossey, L. Marcon, D. Stiévenard, Y.F. Dufrêne, O. Melnyk

Langmuir, 2006, 22, pp.9784-9788. ⟨hal-00127838⟩

• Communication dans un congrès

Ab-initio calculation of excitonic states in nanotubes

L. Wirtz

Workshop on Advances in the Atomic-Scale Understanding of Nanostructures, 2006, Lille, France. ⟨hal-00127911⟩

• Communication dans un congrès

Etudier des nanostructures découplées du substrat : un paradoxe pour la microscopie à effet tunnel

B. Grandidier

Ecole de Science des Surfaces, 2006, Porquerolles, France. ⟨hal-00127917⟩

• Communication dans un congrès

Réseau organique, atome artificiel et liaison pendante silicium : apport de la spectroscopie STM

B. Grandidier, R. Stiufiuc, Maxime Berthe, C. Delerue, D. Deresmes, J.P. Nys, D. Stievenard, R. Rurrali, N. Lorente

10èmes Journées de la Matière Condensée, JMC10, 2006, Toulouse, France. ⟨hal-00127920⟩

• Article dans une revue

Optimizing mechanical quality factor of cymbal transducer

A. Dogan, A.E. Uzgur, Z.O. Yazici, Anne-Christine Hladky

Ferroelectrics, 2006, 331, pp.65-71. ⟨hal-00126492⟩

• Article dans une revue

Punch-through in short-channel AlGaN/GaN HFETs

M.J. Uren, K.J. Nash, R.S. Balmer, T. Martin, E. Morvan, N. Caillas, S.L. Delage, D. Ducatteau, B. Grimbert, Jean-Claude de Jaeger

IEEE Transactions on Electron Devices, 2006, 53, pp.395-398. ⟨hal-00127940⟩

• Communication dans un congrès

Carbon nanotube field-effect transistor for GHz operation

Jean-Marc Bethoux, Henri Happy, Gilles Dambrine, Jean-Sébastien Borghetti, Vincent Derycke, M. F. Goffman, Jean-Philippe Bourgoin

The paper reports high frequency (HF) performance of carbon nanotube field-effect transistors (CNT-FETs) with S-parameters measurements. The optimized device structure achieves current gain cut-off frequency F T of 1 GHz, with a slope of -20dB/decade, for the first time

European Solid-State Device Research Conference, Sep 2006, Montreux, Switzerland. pp.206-209, ⟨10.1109/ESSDER.2006.307674⟩. ⟨hal-00128189⟩

• Article dans une revue

BCH coding performance evaluation on a land mobile channel based OFDM system

A. Seddiki, A. Djebbari, Jean-Michel Rouvaen, Abdelmalik Taleb-Ahmed

Information Technology Journal, 2006, 5, pp.930-936. ⟨hal-00128167⟩