Publications

Affichage de 12631 à 12640 sur 16064


  • Communication dans un congrès

Efficient spreading code allocation strategy for a downlink MC-CDMA system in a time varying frequency selective channel

H. El Ghazi, C. Garnier, Y. Delignon

2006, 5 pp. ⟨hal-00154925⟩

  • Article dans une revue

Room-temperature Terahertz Emission from Nanometer Field Effect Transistors

N. Dyakonova, A. El Fatimy, J. Lusakowski, W. Knap, Michel Dyakonov, M.-A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Yannick Roelens, Christophe Gaquière, D. Theron, A. Cappy

Room-temperature generation of terahertz radiation in nanometer gate length InAlAs/InGaAs and AlGaN/GaN high-mobility transistors is reported. A well-defined source-drain voltage threshold for the emission exists, which depends on the gate bias. Spectral analysis of the emitted radiation is…

Applied Physics Letters, 2006, 88 (14), pp.141906. ⟨10.1063/1.2191421⟩. ⟨hal-00264792⟩

  • Communication dans un congrès

High speed single CCD schieren/shadowgraph camera

Y. Deblock, O. Ducloux, L. Derbesse, A. Merlen, Philippe Pernod

Proceedings of the 27th International Congress on High-Speed Photography and Photonics, 27th ICHSPP, 2006, Xian, Shaanxi, China. ⟨hal-00241073⟩

  • Communication dans un congrès

New receiver architecture for localisation system

V.Y. Vu, A. Benlarbi-Delaï

International Symposium on Intelligent Signal Processing and Communication Systems, ISPACS 2006, 2006, Japan. pp.879-882, ⟨10.1109/ISPACS.2006.364782⟩. ⟨hal-00241357⟩

  • Communication dans un congrès

Développement d'un flextenseur piézoélectrique pour l'imagerie sismique

Bertrand Dubus, G. Haw, C. Granger, P. Mosbah, A. Kosecki, Bogdan Piwakowski, P. Meynier

8ème Congrès Français d'Acoustique, CFA2006, 2006, France. pp.159-162. ⟨hal-00240743⟩

  • Article dans une revue

TEM study of PtSi contacts layers for low Schottky barrier MOSFETs

A. Laszcz, J. Katcki, J. Ratajczak, A. Czerwinski, N. Breil, G. Larrieu, Emmanuel Dubois

We report investigations of the silicide formation process in the Pt/Si structure of low Schottky barrier MOSFETs on SOI. The silicide layers are used there as source and drain contacts and the high quality of the silicide/Si interface and the silicide structure are essential for the electrical…

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.274-277. ⟨10.1016/j.nimb.2006.10.033⟩. ⟨hal-00138656⟩

  • Communication dans un congrès

Dynamic response of carbon nanotube field-effect transistors in the GHz range analysed by S-parameters measurements

Jean-Marc Bethoux, Henri Happy, Gilles Dambrine, Vincent Derycke, M. F. Goffman, Jean-Philippe Bourgoin

Materials Research Society Fall Meeting, Symposium Q : Nanowires and Carbon Nanotubes - Science and Applications, Nov 2006, Boston, United States. pp.Q13.2. ⟨hal-00241320⟩

  • Article dans une revue

Mechanical properties measured by nanoindentation of Pb(Zr Ti)03 sol-gel films deposited on Pt and LaNi03 electrodes

Patrick Delobelle, G.S. Wang, E. Fribourg-Blanc, Denis Remiens

Surface and Coatings Technology, 2006, 201, pp. 3155-3162. ⟨hal-00159447⟩