Publications

• Communication dans un congrès

On the efficiency of several active materials used for vibration damping

Anne-Christine Hladky, C. Granger, M. Phamthi

2006, pp.1128-1131. ⟨hal-00147505⟩

• Communication dans un congrès

Design of branch-line coupler in the G-frequency band

Gaëtan Prigent, Eric Rius, Karine Blary, Henri Happy, Sylvie Lepilliet

This paper deals with the design of broadband hybrid coupler in thin film microstrip (TFMS) technology for millimeter-wave applications in the G-band frequency range. The couplers to be designed are realized in BCB-based (benzo-cyclo-butene) technology. Classical 3-dB branch-line coupler is…

European Microwave Conference, Sep 2006, Manchester, United Kingdom. pp.1296-1299, ⟨10.1109/EUMC.2006.281234⟩. ⟨hal-00147508⟩

• Article dans une revue

Characteristics and fluidic properties of porous monoliths prepared by radiation-induced polymerization for Lab-on-a-Chip applications

K. Chuda, J. Jasik, Julien Carlier, P. Tabourier, C. Druon, X. Coqueret

Radiation Physics and Chemistry, 2006, 75, pp.26-33. ⟨hal-00127164⟩

• Communication dans un congrès

Molecular-scale electronics : status and perspectives

D. Vuillaume

2nd International Nanotechnology Conference, NSF-NNI, 2006, Arlington, United States. ⟨hal-00127158⟩

• Article dans une revue

An open design microfabricated nib-like nanoelectrospray emitter tip on a conducting silicon substrate for the application of the ionization voltage

Séverine Gac, Christian Rolando, S. Arscott

Journal of The American Society for Mass Spectrometry, 2006, 17 (1), pp.75-80. ⟨10.1016/j.jasms.2005.09.003⟩. ⟨hal-02347490⟩

• Article dans une revue

Epitaxial orientation of III-nitrides grown on R-plane sapphire by metal-organic-vapor-phase epitaxy

Philippe Vennegues, Zahia Bougrioua

The absolute epitaxial relationships between III-nitride films and R-plane sapphire are investigated using convergent beam electron diffraction. The resulting relationships are found to be[1−100]III-N‖‖[11−20]sapphire and [0001]III-N‖‖[−1101]sapphire, respectively. The O–Al bonds in the sapphire…

Applied Physics Letters, 2006, 89, pp.111915. ⟨10.1063/1.2353810⟩. ⟨hal-02906710⟩

• Communication dans un congrès

Nanostructured self-assembled monolayers of long-chain alkyltrichlorosilanes on Si

S. Desbief, L. Patrone, D. Goguenheim, D. Vuillaume

International Conference on Nano-structures Self-assembling, 2006, Aix-en-Provence, France. ⟨hal-00127135⟩

• Communication dans un congrès

65 nm RFCMOS technologies with bulk and HR SOI substrate for millimeter wave passives and circuits characterized up to 220 GHz

F. Gianesello, D. Gloria, S. Montusclat, C. Raynaud, S. Boret, C. Clement, S. Dambrine, Sylvie Lepilliet, F. Saguin, P. Scheer, P. Benech, J.M. Fournier

2006, 4 pp. ⟨hal-00154919⟩

• Communication dans un congrès

Raman spectroscopy characterization of single Si-nanowires

M. Marczak, C. Jastrzebski, W. Gebricki, M. Zdrojek, Thierry Melin, D. Hourlier

6th International Conference on Materials for Microelectronics and Nanoengineering, MFMN 2006, 2006, Cranfield, United Kingdom. ⟨hal-00243977⟩

• Communication dans un congrès

Sub-picosecond time-domain measurement of heterojunction bipolar transistors and photodiodes

Alexandre Beck, Jean-Francois Lampin, Mohammed Zaknoune, L. Desplanque, Francis Mollot

We demonstrate the time-domain measurement of the dynamic response of heterojunction bipolar transistors (HBT) and uni-travelling carrier photodiodes (UTC-PD) with sub-picosecond resolution. For the HBT, the stimulus is a step applied to the base. For the UTC-PD, we use optical excitation with 150…

Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, IRMMW-THz2006, Sep 2006, Shanghai, China. pp.510, ⟨10.1109/ICIMW.2006.368718⟩. ⟨hal-00243970⟩