Publications

• Communication dans un congrès

Integration and performance of Schottky junction SOI devices

Emmanuel Dubois, G. Larrieu

6th International Workshop on Junction Technology, IWJT-2006, 2006, Shanghai, China. ⟨hal-00138707⟩

• Communication dans un congrès

Performance evaluation of opto-electronic oscillators employing photonic crystal fibers

A.S. Daryoush, H.W. Li, G. Bouwmans, Didier Decoster, J. Chazelas, F. Deborgies

European Microwave Week, Focused Session : Microwave Generation by Optical Techniques, 2006, Manchester, United Kingdom. ⟨hal-00138749⟩

• Article dans une revue

Lamb wave propagation in a plate with a grooved surface with several spatial periodicities

D. Leduc, B. Morvan, Anne-Christine Hladky, P. Pareige, J.L. Izbicki

Ultrasonics, 2006, 44, pp.1359-1363. ⟨hal-00147506⟩

• Article dans une revue

Surface and interface acoustic waves in solid-fluid superlattices: Green's function approach

Y. El Hassouani, E.H. El Boudouti, Bahram Djafari-Rouhani, H. Aynaou, L. Dobrzynski

We study the propagation of acoustic waves associated with the surface of a semi-infinite superlattice (SL) consisting of alternating elastic solid and ideal fluid layers or its interface with a semi-infinite fluid. We present closed-form expressions for localized surface and interface waves…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 74 (14), pp.144306. ⟨10.1103/PhysRevB.74.144306⟩. ⟨hal-00154926⟩

• Communication dans un congrès

Simulation Monte Carlo de lasers à cascade quantique incluant le couplage électron-photon

Jean-Luc Thobel, Olivier Bonno, François Dessenne

Journées couplées GDR-E Térahertz 2897 et GDR Ondes 2451, 2006, Montpellier, France. ⟨hal-00247425⟩

• Article dans une revue

An optimal high contrast e-beam lithography process for the patterning of dense fin networks

F. Fruleux, J. Penaud, Emmanuel Dubois, M. Francois, M. Muller

There are many difficulties to overcome towards the integration of 10 nm CMOS technology. One such major challenge is to keep a tight control of the leakage current of devices while increasing the current drive at a reduced supply voltage. In this context, multi-gated structures, which are used to…

Materials Science and Engineering: C, 2006, 26 (5-7), pp.893-897. ⟨10.1016/j.msec.2005.09.017⟩. ⟨hal-00138653⟩

• Article dans une revue

Fabrication and room-temperature single-charging behavior of self-aligned single-dot memory devices

Xing Tang, N. Reckinger, V. Bayot, Christophe Krzeminski, Emmanuel Dubois, A. Villaret, D.C. Bensahel

Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room temperature. In order to realize the final single-electron memory…

IEEE Transactions on Nanotechnology, 2006, 5 (6), pp.649-656. ⟨10.1109/TNANO.2006.883481⟩. ⟨hal-00138655⟩

• Article dans une revue

Transformation of hydrogen silsesquioxane properties with RIE plasma treatment for advanced multiple-gate MOSFETs

J. Penaud, F. Fruleux, Emmanuel Dubois

Keeping in line with Moore's law requires increasing efforts in the development of alternative electronic devices. Multiple-gate transistors are very promising in order to suppress short-channel effects and to increase the current drive. Nevertheless, the fabrication of such devices represents…

Applied Surface Science, 2006, 253 (1), pp.395-399. ⟨10.1016/j.apsusc.2006.06.021⟩. ⟨hal-00138654⟩

• Article dans une revue

Tunable BST capacitor loss compensation using active circuit

Mahmoud Al Ahmad, Nathalie Rolland, Paul-Alain Rolland

The compensation of the ohmic and the material dielectric losses in a barium strontium titanate (BST) capacitor using an active circuit is reported in this letter. The negative resistance (NR) circuit creates an effective conductance of -|G n | which adds to the positive conductance of the passive…

IEEE Microwave and Wireless Components Letters, 2006, 16, pp.549-551. ⟨hal-00154924⟩

• Article dans une revue

Investigation of traps in AlGaN/GaN HEMTs by current transient spectroscopy

M. Gassoumi, J.M. Bluet, F. Chekir, I. Dermoul, H. Maaref, G. Guillot, A. Minko, Virginie Hoel, Christophe Gaquière

Materials Science and Engineering: C, 2006, 26, pp.SI : 383-386. ⟨hal-00154931⟩