Publications

• Communication dans un congrès

Weak NLOS channel sounding

Michael Bocquet, Christophe Loyez, A. Benlarbi-Delaï

2006, pp.707-710. ⟨hal-00147513⟩

• Article dans une revue

Effective dielectric constant of nanostructured Si layers

Christophe Delerue, Guy Allan

We calculate the dielectric response of single layers of cubic and spherical Si nanocrystals using a self-consistent tight binding approach. We show that the effective dielectric constant is strongly influenced by the nanostructuring, leading to a strong reduction with respect to the bulk…

Applied Physics Letters, 2006, 88, pp.173117-1-3. ⟨10.1063/1.2198814⟩. ⟨hal-00127832⟩

• Article dans une revue

Silicon surface nano-oxidation using scanning probe microscopy

D. Stievenard, Bernard Legrand

Progress in Surface Science, 2006, 81, pp.112-140. ⟨hal-00127846⟩

• Communication dans un congrès

Microfluidic devices for ultra wide band electromagnetic spectroscopy of single cell

Tahsin Akalin, S. Arscott, Bertrand Bocquet, Nour Eddine Bourzgui, Vincent Senez, A. Treizebre, Teruo Fujii, Erwan Lennon, Yasuyuki Sakai, Takahisa Yamamoto

By performing dielectric spectroscopy across a wide spectrum of frequencies (DC-THz), single-cell analysis could be performed without labeling process. That is why we are developing different micro structures, either planar/3D electrodes or transmission lines, and microfluidic devices using BIOMEMS…

International Conference on Microtechnologies in Medicine and Biology, May 2006, Okinawa, Japan. pp.252-255, ⟨10.1109/MMB.2006.251542⟩. ⟨hal-00130878⟩

• Autre publication scientifique

Conception, réalisation et caractérisation des microcanaux pour les applications microfluidiques

M. Gaudet

2006. ⟨hal-00138941⟩

• Article dans une revue

Electroformation of giant liposomes in microfluidic channels

K. Kuribayashi, G. Tresset, P. Coquet, H. Fujita, S. Takeuchi

Measurement Science and Technology, 2006, 17, pp.3121-3126. ⟨10.1088/0957-0233/17/12/S01⟩. ⟨hal-00244016⟩

• Thèse

Utilisation des technologies CMOS SOI 130 nm pour des applications en gamme de fréquences millimétriques, 130 nm SOI CMOS technology for microwaves applications

Christophe Pavageau

La technologie CMOS SOI (« Silicon On Insulator ») a déjà montré son intérêt pour les circuits numériques par rapport à la technologie CMOS sur substrat massif (« bulk »). Avec l'entrée des technologies CMOS dans l'ère des dimensions nanométriques, les transistors atteignent des…, Silicon On Insulator (SOI) CMOS technology has already shown good performances for digital applications compared to bulk CMOS technology. At nanometer-scale, SOI CMOS transistors exhibit very high cut-off frequencies, enabling the design of millimeter-wave integrated circuits and therefore the…

Micro et nanotechnologies/Microélectronique. Université des Sciences et Technologie de Lille - Lille I, 2005. Français. ⟨NNT : ⟩. ⟨tel-00011744v2⟩

• Communication dans un congrès

About the role played by the principles in the physics and mathematics by J.H. Poincaré

Raffaele Pisano

AIF Workshop Science & Teaching, 6th Dec., AIF Latina & GB Grassi Latina, Dec 2005, Latina, Italy. ⟨hal-04518908⟩

• Article dans une revue

Planar excitation of Goubau transmission lines for THz BioMEMS

A. Treizebre, Tahsin Akalin, Bertrand Bocquet

We propose and demonstrate an original planar excitation of a single wire transmission line also known as Goubau-Line (G-Line). The excitation is based on an electromagnetic transition between a coplanar waveguide and the desired G-line in a planar configuration. We present some characteristics for…

IEEE Microwave and Wireless Components Letters, 2005, 15 (12), pp.886-888. ⟨10.1109/LMWC.2005.859976⟩. ⟨hal-00147496⟩

• Article dans une revue

Optimisation of the parameters of an extended defect model applied to non-amorphizing implants

E. Lampin, Fuccio Cristiano, Youness Lamrani, Damien Connétable

In this paper, we present the optimisation of the parameters of a physical model of the kinetics of extended defects and applied the model with the optimised parameters to non-amorphizing implants. The model describes the small clusters, the {113} defects and the dislocation loops. In the first…

Materials Science and Engineering: B, 2005, 124-125, pp.397-400. ⟨10.1016/j.mseb.2005.08.032⟩. ⟨hal-03599806⟩