Publications

• Article dans une revue

Collective excitations in charged nanocrystals and in close-packed arrays of charged nanocrystals

Christophe Delerue, Guy Allan, Yann-Michel Niquet

We present self-consistent tight binding calculations of the dielectric response of charged semiconductor nanocrystals. We predict collective effects such as the oscillation in opposite phase of the additional electron and of the plasma of valence electrons near the resonance. In arrays of charged…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2005, 72, pp.195316-1-6. ⟨10.1103/PhysRevB.72.195316⟩. ⟨hal-00126239⟩

• Communication dans un congrès

Temperature effect on the performance of a traveling wave amplifier in 130 nm SOI technology

M. Si Moussa, C. Pavageau, Francois Danneville, J. Russat, N. Fel, J.P. Raskin, D. Vanhoenacker-Janvier

2005, pp.495-498. ⟨hal-00125319⟩

• Article dans une revue

Three dimensional calculation of propagation losses in photonic crystal waveguides

S. Fasquel, X. Melique, O. Vanbesien, D. Lippens

Optics Communications, 2005, 246, pp.91-96. ⟨hal-00125351⟩

• Communication dans un congrès

Trends and challenge in micro and nanoelectronics device research in Europe

A. Cappy, Nicolas Wichmann, J.S. Galloo, S. Bollaert, Yannick Roelens, J. Mateos, T. Gonzalez, W. Knap

Topical Workshop on Heterostructure Microelectronics, TWHM 2005, 2005, Hyogo, Japan. ⟨hal-00125339⟩

• Communication dans un congrès

Propriétés hyperfréquences et de bruit des filières conventionnelles de transistors MOS à grille sub-100 nm

G. Pailloncy, Gilles Dambrine, Francois Danneville

Actes des 8èmes Journées Nationales du Réseau Doctoral de Microélectronique, 2005, Paris, France. ⟨hal-00126726⟩

• Communication dans un congrès

Performance d'une liaison descendante basée sur le MC-CDMA dans le canal à 60 GHz : comparaison avec l'OFDM-TDMA et le DS-CDMA

H. El Ghazi, C. Garnier, Laurent Clavier, W. Sawaya, Y. Delignon

Actes des 4èmes Journées Franco-Maghrébines des Microondes et leurs Applications, 2005, Rabat, Maroc. ⟨hal-00126739⟩

• Communication dans un congrès

Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hours on-state and off-state hot-electron stress

A. Sozza, C. Dua, E. Morvan, M.A. Poisson, S. Delage, F. Rampazzo, A. Tazzoli, F. Danesin, G. Meneghesso, E. Zanoni, A. Curutchet, N. Malbert, N. Labat, B. Grimbert, Jean-Claude de Jaeger

2005, 4 pp. ⟨hal-00126762⟩

• Article dans une revue

Voltage tuneable terahertz emission from a ballistic nanometer InGaAs/InAlAs transistor

J. Lusakowski, N. Dyakonova, L. Varani, J. Mateos, T. Parenty, A. Cappy, V. Popov, M.S. Shur

Journal of Applied Physics, 2005, 97 (6), pp.064307. ⟨10.1063/1.1861140⟩. ⟨hal-00330467⟩

• Article dans une revue

Reactive ion etching of a 20 nanometers tungsten gate using a SF$_6$/N$_2$ chemistry and hydrogen silsesquioxane hard mask resist

G. Larrieu, Emmanuel Dubois

This article reports on a direct method for patterning a tungsten gate in the decananometric range using high-resolution electron-beam lithography and reactive ion etching (RIE). Electron-beam lithography is based on the use of hydrogen silsesquioxane for its remarkable properties as a negative-…

Journal of Vacuum Science and Technology, 2005, 23 (5), pp.2046-2050. ⟨10.1116/1.2050654⟩. ⟨hal-00125635⟩

• Article dans une revue

Piezoelectric micro-transformer based on SOI structure

Dejan Vasic, Emmanuel Sarraute, François Costa, Patrick Sangouard, Eric Cattan

Sensors and Actuators A: Physical , 2005, 117 (2), pp.317-324. ⟨hal-00920231⟩