Publications

• Communication dans un congrès

Terahertz emission and noise spectra in HEMTs

J. Mateos, S. Perez, D. Pardo, T. Gonzalez, J. Lusakowski, N. Dyakonova, W. Knap, S. Bollaert, Yannick Roelens, A. Cappy, J.F. Millithaler, L. Varani

Terahertz emission and noise spectra in HEMTs, L. Reggiani, 2005, Lecce, Italy. pp.423-430, ⟨10.1063/1.2138647⟩. ⟨hal-00154897⟩

• Article dans une revue

CBr4 and Be heavily doped InGaAs grown in a production MBE system

S. Godey, S. Dhellemmes, A. Wilk, M. Zaknoune, F. Mollot

Journal of Crystal Growth, 2005, 278, pp.600-603. ⟨hal-00154907⟩

• Article dans une revue

Evaluation of residual stress profiles using the Barkhausen noise effect to verify high performance aerospace bearings

S. Devaux, Marc Duquennoy, J. Gualandrii, Mohammadi Ouaftouh, Mohamed Ourak

NDT & E International, 2005, 20, pp.9-24. ⟨hal-00140392⟩

• Article dans une revue

Detection of moving objects and flows in liquids by ultrasonic phase

Y. Pyl'Nov, Vladimir Preobrazhensky, Philippe Pernod

Acoustical Physics, 2005, 51, pp.105-109. ⟨hal-00137663⟩

• Article dans une revue

High power and linearity performances of gallium nitride HEMT devices on sapphire substrate

M. Werquin, Christophe Gaquière, Y. Guhel, N. Vellas, D. Theron, B. Boudart, Virginie Hoel, Marie Germain, Jean-Claude de Jaeger, S. Delage

The benefit of high drain-source bias voltages of GaN devices on sapphire substrates for high linearity applications is demonstrated. Whatever the output power densities considered, the corresponding intermodulation ratio is at least 20 dB better than usual PHEMT devices on GaAs substrates for the…

Electronics Letters, 2005, 41 (1), ⟨10.1049/el:20056735⟩. ⟨hal-01646906⟩

• Communication dans un congrès

A metamorphic GaAs HEMT distributed amplifier with 50 GHz bandwidth and low noise for 40 Gbits/s photoreceiver

G. Wolf, H. Happy, S. Demichel, R. Leblanc, F. Blache, R. Lefevre, Gilles Dambrine

2005, pp.27-29. ⟨hal-00125306⟩

• Communication dans un congrès

Low power 23 GHz and 27 GHz distributed cascode amplifiers in a standard 130 nm SOI CMOS process

C. Pavageau, A. Siligaris, L. Picheta, Francois Danneville, M. Si Moussa, J.P. Raskin, D. Vanhoenacker-Janvier, J. Russat, N. Fel

2005, pp.2243-2246. ⟨hal-00125311⟩

• Communication dans un congrès

Investigation of longitudinal velocity fluctuations in MOSFETs by means of ensemble Monte Carlo simulation

R. Rengel, J. Mateos, T. Gonzales, D. Pardo, Gilles Dambrine, Francois Danneville, M.J. Martin

2005, pp.497-502. ⟨hal-00125307⟩

• Article dans une revue

As-P interface-sensitive GaInP/GaAs structures grown in a production MBE system

S. Dhellemmes, S. Godey, A. Wilk, X. Wallart, F. Mollot

Journal of Crystal Growth, 2005, 278, pp.564-568. ⟨hal-00125361⟩

• Communication dans un congrès

Modèles numériques en acoustique non-linéaire – Application aux ultrasons de puissance

Bertrand Dubus, C. Campos-Pozuelo, C. Vanhille

Journée du GDR Ondes - Modèles de propagation en acoustique, 2005, Paris, France. ⟨hal-00125901⟩