Publications

• Communication dans un congrès

Réalisation de transistors HEMTs AlInAs/GaInAs de 20nm de longueur de grille

I. Duszynski, Nicolas Wichmann, S. Bollaert, X. Wallart, A. Cappy

Actes des 14èmes Journées Nationales Microondes, 2005, Nantes, France. ⟨hal-00126727⟩

• Communication dans un congrès

Technologie, simulation et caractérisation à T=300K de dispositifs balistiques de type GaInAs/AlInAs avec grille de commande

J.S. Galloo, C. Gardes, Z. Teukam, Yannick Roelens, S. Bollaert, X. Wallart, A. Cappy

Actes des 14èmes Journées Nationales Microondes, 2005, Nantes, France. ⟨hal-00126725⟩

• Article dans une revue

Design and optimization of a 1.3/1.55-µm wavelength selective p-i-n photodiode based on multimode diluted waveguide

V. Magnin, L. Giraudet, Joseph Harari, Didier Decoster

IEEE Photonics Technology Letters, 2005, 17, pp.459-461. ⟨hal-00125655⟩

• Article dans une revue

Non-linear piezoelectric properties of the thin Pb(ZrxTi1−x)O3 (PZT) films deposited on the Si-substrate

Jaroslav Nosek, Miroslav Sulc, Lidmila Burianová, Caroline Soyer, Eric Cattan, Denis Remiens

In this paper some non-linear piezoelectric properties are investigated in lead zirconate-titanate Pb(ZrxTi1−x)O3 (PZT) thin films, sputtered on the Si/SiO2/Ti/Pt substrates. The thin PZT films were optimised by technology conditions (sputtering (ZrxTi1−x) composition, PZT film thickness, buffer…

Journal of the European Ceramic Society, 2005, 25 (12), pp.2257-2261. ⟨10.1016/j.jeurceramsoc.2005.03.041⟩. ⟨hal-00138430⟩

• Article dans une revue

Acoustic channel drop tunneling in a phononic crystal

Yan Pennec, Bahram Djafari-Rouhani, Jerome O. Vasseur, Hocine Larabi, Abdelkrim Khelif, Abdelkrim Choujaa, Sarah Benchabane, Vincent Laude

We study both theoretically and experimentally the possibility of resonant tunneling of acoustic waves between two parallel guides created in a phononic crystal composed of steel cylinders in water. In the absolute bandgap of the phononic crystal, ranging from 250 to 325 kHz, a full transmission…

Applied Physics Letters, 2005, 87 (26), pp.261912. ⟨10.1063/1.2158019⟩. ⟨hal-00072921⟩

• Communication dans un congrès

High frequency low noise potentialities of down to 65nm technology nodes MOSFETs

Gilles Dambrine, Daniel Gloria, Patrick Scheerer, Christine Raynaud, Francois Danneville, Sylvie Lepilliet, Alexandre Siligaris, Guillaume Pailloncy, Baudouin Martineau, Emmanuel Bouhana, Raphael Valentin

65 nm n-MOSFETs show state-of-the-art cut-off frequency with f t = 210 GHz and microwave low noise and high gain properties (NF min = 0.8 dB and G ass = 17.3 dB at 12 GHz). As compared with the previous nodes, the high frequency properties of these MOSFETs continue to be in agreement with the…

European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005, Oct 2005, Paris, France. pp.97-100. ⟨hal-00125303⟩

• Article dans une revue

Molecular interactions of PTCDA on Si(100)

T. Soubiron, Francois Vaurette, J.P. Nys, B. Grandidier, X. Wallart, D. Stievenard

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2005, 581, pp.178-188. ⟨hal-00126421⟩

• Article dans une revue

Electrodeposited nanocrystalline PbSe quantum wells : synthesis, electrical and optical properties

Zeger Hens, Ernst Stefan Kooij, Guy Allan, B. Grandidier, Daniel Vanmaekelbergh

The synthesis of PbSe nanocrystals by electrodeposition on Au(111) is discussed and it is shown that the characteristics of nucleation and growth determine the electrical and optical properties of the nanocrystals. Electrodeposition of PbSe on gold occurs by a two-dimensional nucleation and growth…

Nanotechnology, 2005, 16, pp.339-343. ⟨10.1088/0957-4484/16/4/001⟩. ⟨hal-00126418⟩

• Communication dans un congrès

HEMTs for millimeter and sub-millimeter waves applications

S. Bollaert, A. Cappy, Gilles Dambrine, I. Duszynski, Yannick Roelens, A. Shchepetov, X. Wallart, A. Wieszt

GDR THz, 2005, Montpellier, France. ⟨hal-00125314⟩

• Communication dans un congrès

Ballistic nanodevices for high frequency applications

S. Bollaert

International Conference on Materials for Advanced Technologies, ICMAT 2005, 2005, Singapore, Singapore. ⟨hal-00125313⟩