Publications

• Article dans une revue

Transient modeling of Lamb waves generated in viscoelastic materials by surface bonded piezoelectric transducers

Laurent Duquenne, Emmanuel Moulin, Jamal Assaad, Sébastien Grondel

In order to help optimize health monitoring systems based on Lamb wave propagation, a hybrid finite element–normal mode expansion modeling technique has been developed. This technique allows one to predict the Lamb waves generated in a structure as a function of the transducer parameters (size,…

Journal of the Acoustical Society of America, 2004, 116, pp.133-141. ⟨10.1121/1.1760109⟩. ⟨hal-00142008⟩

• Article dans une revue

Noise modeling in fully depleted SOI MOSFETs

G. Pailloncy, B. Iniguez, Gilles Dambrine, J.P. Raskin, Francois Danneville

Solid-State Electronics, 2004, 48, pp.813-825. ⟨hal-00133880⟩

• Communication dans un congrès

Design of silicon-pTMDS bio-MEMS with millimeter and sub-millimeter waves transducers

Vianney Mille, Nour Eddine Bourzgui, F Medjdoub, Bertrand Bocquet

Biosensors allow investigating complex media with many applications in biology, environment and food processing. But new constraints in terms of sensitivity, real-time measurement and life time lead to new designs. Microfluidic and microsystems technologies can bring interesting solutions. We…

34th European Microwave Conference, EuMC 2004, Oct 2004, Amsterdam, Netherlands. pp.1/169-172. ⟨hal-00248088⟩

• Article dans une revue

Hysteretic behavior of the charge injection in single silicon nanoparticles

H. Diesinger, Thierry Melin, D. Deresmes, D. Stievenard, T. Baron

Applied Physics Letters, 2004, 85, pp.3546-3548. ⟨hal-00141252⟩

• Communication dans un congrès

Formation of nano-domains in alkyltrichlorosilane self-assembled monolayers deposited on silicon : applications to molecular electronics

S. Desbief, L. Patrone, D. Goguenheim, D. Vuillaume

Ultimate Lithography and Nanodevice Engineering, 2004, Agelonde, France. ⟨hal-00140740⟩

• Autre publication scientifique

Elaboration et caractérisation de transistors MOS Schottky en régime nanométrique

G. Larrieu

2004. ⟨hal-00140974⟩

• Article dans une revue

Systematic structural characterization of the high-temperature behavior of nearly stoichiometric silicon oxycarbide glasses

H. Brequel, J. Parmentier, S. Walter, R. Badheka, G. Trimmel, Sylvie Masse, J. Latournerie, P. Dempsey, C. Turquat, A. Desmartin-Chomel, L. Neindre-Prum, U. Jayasooriya, D. Bahloul-Hourlier, J. Kleebe, G. Soraru, S. Enzo, F. Babonneau

Chemistry of Materials, 2004, 16, pp.2585-2598. ⟨10.1021/cm049847a⟩. ⟨hal-00248020⟩

• Chapitre d'ouvrage

Application of PZT-film-Si-substrate structures for various types of position sensitive pyroelectric detectors of radiation

S. Bravina, Eric Cattan, N. Morozovsky, Denis Remiens

Pandalai S.G. Recent Research Developments in Applied Physics, Vol. 7, Part I, Research Signpost, Kerala, India, pp.177-196, 2004. ⟨hal-00139043⟩

• Communication dans un congrès

On-wafer high frequency noise power measurements under cryogenic conditions : a new de-embedding approach [HEMT example]

S. Delcourt, Gilles Dambrine, Nour Eddine Bourzgui, Sylvie Lepilliet, C. Laporte, J.P. Fraysse, M. Maignan

2004, pp.913-916. ⟨hal-00154887⟩

• Article dans une revue

Growth of Be-doped GaInP/GaAs heterostructure bipolar transistor by all solid-source multiwafer production molecular beam epitaxy

A. Wilk, M. Zaknoune, S. Godey, S. Dhellemmes, P. Gérard, C. Chaix, F. Mollot

The rapid setup of the molecular beam epitaxy (MBE) growth process for GaInP/GaAs heterostructure bipolar transistor (HBT) in an all solid-source multiwafer production MBE system is reported. The first 100×100 μm2 large area test structures enable determination of the static gain, which is above…

Journal of Vacuum Science and Technology, 2004, 22 (3), pp.1444-1449. ⟨10.1116/1.1738665⟩. ⟨hal-00162756⟩