Publications

• Communication dans un congrès

Two-photon absorption in InP substrates in the 1.55 µm range

D. Vignaud, Jean-Francois Lampin, F. Mollot

2004, pp.134-137. ⟨hal-00140715⟩

• Article dans une revue

Evolution of the density of states from a two- to a zero-dimensional semiconductor

Zeger Hens, B. Grandidier, D. Deresmes, Guy Allan, Christophe Delerue, Didier Stiévenard, Daniel Vanmaekelbergh

Lead selenide nanocrystals have been electrodeposited on gold(111) with a high degree of control over their dimensions, giving rise to isolated nanocrystals with different edge-to-height aspect ratio. The electron density of states (DOS) of individual nanocrystals as a function of their aspect…

EPL - Europhysics Letters, 2004, 65, pp.809-815. ⟨10.1209/epl/i2003-10130-3⟩. ⟨hal-00141246⟩

• Article dans une revue

A micro-nib nanoelectrospray source for mass spectrometry

S. Arscott, S. Le Gac, C. Druon, P. Tabourier, C. Rolando

Sensors and Actuators B: Chemical, 2004, 98 (2-3), pp.140-147. ⟨hal-00140771⟩

• Communication dans un congrès

Silicon-molecules-metal junctions by nanotransfer printing

C. Merckling, David Guérin, S. Lenfant, D. Vuillaume

French-Japan Workshop on Nanomaterials, 2004, Bordeaux, France. ⟨hal-00140758⟩

• Communication dans un congrès

Plateforme SAW dédiée à la microfluidique discrète pour applications biologiques

A. Renaudin, P. Tabourier, V. Zhang, C. Druon

Actes du 2ème Congrès Français de Microfluidique, 2004, Toulouse, France. ⟨hal-00142067⟩

• Communication dans un congrès

Modelisation et simulation de la technlogie MOS ultimes

E. Lampin, Christophe Krzeminski, T. Alkalin, V. Cuny

GDR Nanoélectronique, 2004, Aussois, France. ⟨hal-00140992⟩

• Article dans une revue

Boundary conditions for realistic simulation of ultra short pseudomorphic high electron mobility transistor on indium phosphide substrates

F Medjdoub, F. Dessenne, Jean-Luc Thobel, M. Zaknoune, D. Theron

This paper deals with the problem of ohmic contacts modeling for Monte Carlo simulation of high electron mobility transistors (HEMT). As it is practically impossible to simulate ohmic contacts, they are replaced by boundary conditions (BC). The simulated behaviour of devices is strongly influenced…

Solid-State Electronics, 2004, 48 (5), pp.683-688. ⟨10.1016/j.sse.2003.09.011⟩. ⟨hal-00133956⟩

• Communication dans un congrès

Reliability of polycrystalline MEMS : prediction of the debugging-time

O. Millet, Pierre Bertrand, Bernard Legrand, D. Collard, L. Buchaillot

International Symposium for Testing and Failure Analysis, ISTFA 2004, 2004, Worcester, MA, United States. ⟨hal-00141030⟩

• Communication dans un congrès

Evaluation of electrical impedance spectra for single biocells in microfluidic devices using combined FEMLAB/ HSPICE simulated models

V. Senez, T. Yamamoto, B. Poussard, T. Fukuba, J.M. Capron, T. Fujii

2004, pp.99-102. ⟨hal-00141012⟩

• Autre publication scientifique

Analyse des propriétés électromagnétiques des écrans cylindriques, application à la caractérisation de l'efficacité de blindage des câbles

Frédéric Broydé

2004. ⟨hal-00142006⟩