Publications

Affichage de 13761 à 13770 sur 16059


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2D numerical simulation of acoustic wave phase conjugation in active medium

P. Voinovich, A. Merlen, Vladimir Preobrazhensky, Philippe Pernod

2004, pp.1872-1875. ⟨hal-00162759⟩

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Nanophotonic MMICs for RF signal processing

D. Lauvernier, Malek Zegaoui, Gwenn Ulliac, Patrice Miska, Arnaud Beaurain, Karine Blary, Joseph Harari, Hongwu Li, Vincent Magnin, Didier Decoster, D. Dolphi, Stéphane Formont, Jean Chazelas

Microphotonics Technology Day, 2004, Noordwijk, Netherlands. ⟨hal-00141215⟩

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Low-loss InGaAsP/InP submicron optical waveguides fab ricated by ICP etching

Samuel Dupont, Arnaud Beaurain, Patrice Miska, Malek Zegaoui, Jean-Pierre Vilcot, Hongwu Li, M. Constant, Didier Decoster, Jean Chazelas

The fabrication and characterisation of low-loss InGaAsP/InP optical submicron waveguides made with ICP etching is reported. Their width ranges from 0.2 to 2 µm. For the 0.5 µm width, the propagation losses at =1.55 µm as low as 4.2 dB/mm have been measured.

Electronics Letters, 2004, 40(14), pp.865-866. ⟨10.1049/el:20040502⟩. ⟨hal-00270000⟩

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Hysteretic behavior of the charge injection in single silicon nanoparticles

H. Diesinger, Thierry Melin, D. Deresmes, D. Stievenard, T. Baron

Applied Physics Letters, 2004, 85, pp.3546-3548. ⟨hal-00141252⟩

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Formation of nano-domains in alkyltrichlorosilane self-assembled monolayers deposited on silicon : applications to molecular electronics

S. Desbief, L. Patrone, D. Goguenheim, D. Vuillaume

Ultimate Lithography and Nanodevice Engineering, 2004, Agelonde, France. ⟨hal-00140740⟩

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High-frequency extension of the transmission-line theory for an open line

A. Cozza, F. Canavero, B. Demoulin

12ème Colloque International et Exposition sur la Compatibilité Electromagnétique, CEM'04, 2004, Toulouse, France. pp.165-170. ⟨hal-00509722⟩

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Transition from ballistic to ohmic transport in T-branch junctions at room temperature in GaInAs/AlInAs heterostructures

Jean-Sebastien Galloo, Emmanuelle Pichonat, Yannick Roelens, S. Bollaert, X. Wallart, A. Cappy, Javier Mateos, Tomás González, Hervé Boutry, Vincent Bayot, Lukasz Bednarz, Isabelle Huynen

We have developed technolow based on GaInAs/AIInAs for building ballistic devices working at room temperature. We present processes for ballistic devices (T-Branch Junctions (TBJs), YBranch Junctions (YBJs)). Then we present DC Characterization of TBJs to show the transition from ballistic to ohmic…

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, May 2004, Kagoshima, Japan. pp.378-381, ⟨10.1109/ICIPRM.2004.1442734⟩. ⟨hal-00133896⟩

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Composants balistiques

S. Bollaert

Journées Nationales Microélectronique et Optoélectronique, 2004, La Grande Motte, France. ⟨hal-00133910⟩