Publications

• Article dans une revue

Integrated InP optical switches based on carrier-induced index variation

Hongwu Li, Karine Blary, Samuel Dupont, Jean-Pierre Vilcot, Joseph Harari, Jean Chazelas, Didier Decoster

We present theoretical study, technological realization and characterization of fabricated devices: TIR switches, electro-optical directional coupler switches and DOS switches because of their good linearity, low noise figure and short switching time which make them particularly suitable for…

Proceedings of SPIE, the International Society for Optical Engineering, 2004, 5445, pp.170-175. ⟨10.1117/12.558773⟩. ⟨hal-00141205⟩

• Article dans une revue

Piezoelectric micro-transformer based on PZT unimorph membrane

D. Vasic, Emmanuel Sarraute, F. Costa, P. Sangouard, Eric Cattan

Journal of Micromechanics and Microengineering, 2004, 14, pp.S90-S96. ⟨hal-00141177⟩

• Article dans une revue

Micro-transformateur piézoélectrique intégré sur substrat en silicium

Dejan Vasic, François Costa, Emmanuel Sarraute, Patrick Sangouard, Eric Cattan

Revue Internationale de Génie Electrique, 2004, 7 (3-4), pp.315-332. ⟨hal-00811665⟩

• Ouvrages

Organic field effect transistors : towards molecular scale

G. Horowitz, F. Biscarini, D. Vuillaume

Elsevier, 177 p., 2004. ⟨hal-00133401⟩

• Communication dans un congrès

Input impedance and radiation performance of planar and quasi-planar Fabry-Perot based directive antennas

Ronan Sauleau, Philippe Coquet

27th ESA Antenna Technology Workshop on Innovative Periodic Antennas, Mar 2004, Saint-Jacques de Compostelle, Spain. pp.401-408. ⟨hal-00549294⟩

• Article dans une revue

Measurement of low Schottky barrier heights applied to metallic source/drain metal–oxide–semiconductor field effect transistors (MOSFETs)

Emmanuel Dubois, G. Larrieu

Journal of Applied Physics, 2004, 96, pp.729-737. ⟨hal-00140973⟩

• Autre publication scientifique

Evaluation de la dégradation du béton par ondes ultrasonores

S. Ould Naffa

2004. ⟨hal-00162783⟩

• Article dans une revue

Growth of Be-doped GaInP/GaAs heterostructure bipolar transistor by all solid-source multiwafer production molecular beam epitaxy

A. Wilk, M. Zaknoune, S. Godey, S. Dhellemmes, P. Gérard, C. Chaix, F. Mollot

The rapid setup of the molecular beam epitaxy (MBE) growth process for GaInP/GaAs heterostructure bipolar transistor (HBT) in an all solid-source multiwafer production MBE system is reported. The first 100×100 μm2 large area test structures enable determination of the static gain, which is above…

Journal of Vacuum Science and Technology, 2004, 22 (3), pp.1444-1449. ⟨10.1116/1.1738665⟩. ⟨hal-00162756⟩

• Communication dans un congrès

A computational model for the Si/C/N nanopowder

Mohamed Amara, M. El Ganaoui, D. Hourlier

21st International Congress of Theoretical and Applied Mechanics, ICTAM04, 2004, Warsaw, Poland. ⟨hal-00248023⟩

• Communication dans un congrès

P-τ transfromation as the efficient tool for determination of the velocity dispersion characteristics in complex structures

Bogdan Piwakowski, M. Goueygou, A. Fnine, F. Buyle-Bodin

16th World Conference on Non Destructive Testing, WCNDT 2004, 2004, Canada. pp.1-8. ⟨hal-00248102⟩