Publications

• Communication dans un congrès

3 bit 90° phase shifter using microfluidic technology

L. Le Cloirec, A. Benlarbi-Delai, Bertrand Bocquet

Addressing systems that require broadband devices for high data rate communication or high resolution radar, we develop the concept of a millimeter phase shifter that combines micro strip or coplanar wave guide and microfluidic facilities. To illustrate this approach we built from a simple…

34th European Microwave Conference, Oct 2004, Amsterdam, Netherlands. pp.1161-1164. ⟨hal-00142282⟩

• Communication dans un congrès

Physical analysis of the breakdown phenomenon between single or double step gate recess HEMTs

M. Elkhou, Michel Rousseau, H. Gerard, Jean-Claude de Jaeger

2004, pp.571-574. ⟨hal-00142307⟩

• Communication dans un congrès

Transposition of a base band UWB impulse radio signal at 60 GHz for high data rate multiple access indoor communication systems

N. Deparis, Christophe Loyez, M. Fryziel, N. Rolland, P. Rolland

2004, pp.253-256. ⟨hal-00142278⟩

• Communication dans un congrès

DC & AC characterization and modeling of N & P SOI MOSFET

C. Pavageau, A. Siligaris, L. Picheta, Francois Danneville, Gilles Dambrine, J. Russat, N. Fel

MEDEA+ T206 SOI Workshop, 2004, Crolles, France. ⟨hal-00133901⟩

• Communication dans un congrès

100nm InAlAS/InGaAs double-gate HEMT using transferred substrate

Nicolas Wichmann, I. Duszynski, S. Bollaert, J. Mateos, X. Wallart, A. Cappy

2004, pp.1023-1026. ⟨hal-00133886⟩

• Communication dans un congrès

Lamb waves in BAW resonators : analysis of spurious resonances and design of resonators in the UHF-VHF range

A. Volatier, G. Caruyer, E. Defay, Bertrand Dubus

148th Acoustical Society of America Meeting, 2004, San Diego, CA, United States. ⟨hal-00133864⟩

• Article dans une revue

Raman characterization of Mg⁺ ion-implanted GaN

B. Boudart, Y. Guhel, J.C. Pesant, P. Dhamelincourt, M.A. Poisson

Mg+ ions were implanted at room temperature in n-type hexagonal GaN for the device isolation purposes. The implantation dose varied from 7.5 × 1012 to 1016 ions cm-2. We performed resonance Raman spectroscopy and DC electrical measurements in order to monitor the structural and electrical changes…

• Article dans une revue

Electrical characterization of Au/n-GaN Schottky diodes.

B. Akkal, Z. Benamara, H. Abid, A. Talbi, Bernard Gruzza

Materials Chemistry and Physics, 2004, pp.31. ⟨hal-00272575⟩

• Communication dans un congrès

On-wafer high frequency noise power measurements under cryogenic conditions : a new de-embedding approach [HEMT example]

S. Delcourt, Gilles Dambrine, Nour Eddine Bourzgui, Sylvie Lepilliet, C. Laporte, J.P. Fraysse, M. Maignan

2004, pp.913-916. ⟨hal-00154887⟩

• Communication dans un congrès

Mesures pulsées haute température en mode DC et RF de HEMTs AlGaN/GaN sur substrat silicium haute résistivité

M. Werquin, D. Ducatteau, N. Vellas, D. Jambon, D. Theron, E. Delos, N. Caillas, Y. Cordier, Jean-Claude de Jaeger, S. Delage, Christophe Gaquière

GDR Grand Gap, 2004, Fréjus, France. ⟨hal-00141965⟩