Publications

Affichage de 13931 à 13940 sur 16175


  • Communication dans un congrès

Conception, réalisation et caractérisation d'un système de télécommunication par faisceau hertzien à la fréquence de 7.1 GHz

P. Delemotte, Jean-François Legier, Gilles Dambrine, H. Happy

8èmes Journées Pédagogiques du CNFM, 2004, Saint Malo, France. ⟨hal-00133904⟩

  • Communication dans un congrès

Noise and large-signal characterization of a thin-film MHEMT feedback amplifier in multilayer MCM-D technology

R. Vandersmissen, D. Schreurs, Gilles Dambrine, G. Carchon, G. Borghs

2004, 8.14, 4p. ⟨hal-00133914⟩

  • Article dans une revue

Radiometric sensor for temperature control of food processing

V. Thomy, Luc Dubois, C. Vanoverschelde, J.P. Sozanski, J. Pribetich

IEEE Sensors Journal, 2004, 4, pp.772-778. ⟨hal-00133930⟩

  • Communication dans un congrès

Imagerie à 35 GHz de défauts au sein de matériaux diélectriques

M. Maazi, D. Glay, T. Lasri

2004, pp.Session 10. ⟨hal-00142051⟩

  • Communication dans un congrès

Near-field levitation generated by ultrasonic vibrations : theoretical analysis and experiments

Anne-Christine Hladky, C. Granger, G. Haw, Bertrand Dubus

2004, pp.623-624. ⟨hal-00142046⟩

  • Communication dans un congrès

Photonic band gap materials

D. Lippens

28th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE'04, 2004, Smolenice, Slovakia. ⟨hal-00133957⟩

  • Communication dans un congrès

As–P interface-sensitive GaInP/GaAs structures grown in a production MBE system

S. Dhellemmes, S. Godey, A. Wilk, X. Wallart, F. Mollot

Proceedings of the 13th International Conference on Molecular Beam Epitaxy, MBE XIII, 2004, Edinburgh, Scotland, United Kingdom. ⟨hal-00142073⟩

  • Communication dans un congrès

Transmission Electron Microscopy analysis of MOSFET structures

A. Laszcz, J. Katcki, J. Ratajczak, Emmanuel Dubois, G. Larrieu, X. Wallart, Xing Tang

School on Materials Science and Electron Microscopy, Emerging Microscopy for Advanced Materials Development-Imaging and Spectroscopy on Atomic Scale, 2004, Berlin, Germany. ⟨hal-00140997⟩

  • Article dans une revue

Impact of downscaling on high-frequency noise performance of bulk and SOI MOSFETs

G. Pailloncy, C. Raynaud, M. Vanmackelberg, Francois Danneville, Sylvie Lepilliet, J.P. Raskin, Gilles Dambrine

IEEE Transactions on Electron Devices, 2004, 51, pp.1605-1612. ⟨hal-00133871⟩

  • Communication dans un congrès

Ballistic GaInAs/AlInAs devices technology and characterization at room temperature

J.S. Galloo, Yannick Roelens, S. Bollaert, Emmanuelle Pichonat, X. Wallart, A. Cappy, Javier Mateos, Tomás González

We have developed technology based on GaInAs/AlInAs for building ballistic devices working at room temperature. We first present here processes for passive and active devices (T-branch junctions (TBJs), Y-branch junctions (YBJs) and TBJs with Schottky gates. Then, we present DC characterization of…

4th IEEE Conference on Nanotechnology, Aug 2004, Munich, Germany. pp.98-100, ⟨10.1109/NANO.2004.1392262⟩. ⟨hal-00133881⟩