Publications

• Article dans une revue

Two-dimensional phononic crystal with tunable narrow pass band: Application to a waveguide with selective frequency

A. Khelif, P. Deymier, Bahram Djafari-Rouhani, Jerome O. Vasseur, L. Dobrzynski

Journal of Applied Physics, 2003, 94 (3), pp.1308-1311. ⟨10.1063/1.1557776⟩. ⟨hal-03302149⟩

• Communication dans un congrès

External Optical Probe for Novel on-line Testing Method of Digital Circuits

Benoit Pannetier, Pierre Lemaitre-Auger, Smail Tedjini, El Hadj Dogheche

An electro-optical (EO) probe dedicated to the on-line testing of electronic systems is presented here. The probe is design to be implanted permanently on an electronic circuit. It is made of PZT material comprises between two electrodes that also act as optical mirrors. The upper mirror is a multi…

27th General Assembly of the International Union of Radio Science, Aug 2003, Maastricht, Netherlands. paper #847, 1-4. ⟨hal-00261725⟩

• Article dans une revue

Measurements and calculations of the sound attenuation by a phononic band gap structure suitable for an insulating partition application

Jerome O. Vasseur, C. Goffaux, F. Maseri, J. Vasseur, Bahram Djafari-Rouhani, Ph. Lambin

Applied Physics Letters, 2003, 83 (2), pp.281-283. ⟨10.1063/1.1592016⟩. ⟨hal-03302159⟩

• Article dans une revue

Carrier mobility versus carrier density in Al x Ga 1 − x N / G a N quantum wells

J.-L. Farvacque, Z. Bougrioua

Experimental measurements show that, in AlxGa1−xN/GaN triangular quantum wells, the free-carrier mobility experiences a strong decrease with increasing carrier density. A theoretical analysis of the various scattering mechanisms that can explain such a behavior is presented. It shows that, even…

Physical Review B, 2003, 68 (3), ⟨10.1103/PhysRevB.68.035335⟩. ⟨hal-02906527⟩

• Article dans une revue

Transmission and dispersion relations of perfect and defect-containing waveguide structures in phononic band gap materials

A. Khelif, Bahram Djafari-Rouhani, Jerome O. Vasseur, P. Deymier

Physical Review B, 2003, 68 (2), ⟨10.1103/PhysRevB.68.024302⟩. ⟨hal-03302151⟩

• Communication dans un congrès

Electro-optical Probe dedicated to the On-line Testing of Electronic Systems

B. Pannetier, Pierre Lemaitre-Auger, S. Tedjini, El Hadj Dogheche, Denis Remiens

Conference on Lasers and Electro-Optics, Jul 2003, Munich, Germany. pp.000-001. ⟨hal-00261722⟩

• Article dans une revue

Improved AlGaN/GaN high electron mobility transistor using AlN interlayers

A. Jimenez, Z. Bougrioua, J. Tirado, A. Braña, E. Calleja, E. Munoz, I. Moerman

This work reports on the effects of AlN interlayers embedded into the GaN semi-insulating buffer of AlGaN/GaN high electron mobility transistors, in comparison with standard heterostructures without AlN interlayers. Detailed optical and structural characterization data are presented, along with…

Applied Physics Letters, 2003, 82 (26), pp.4827-4829. ⟨10.1063/1.1588379⟩. ⟨hal-02906528⟩

• Communication dans un congrès

Volta’s Pile and Carnot’s Cycle

Raffaele Pisano

XXIII SISFA International Congress of the history of physics and Astronomy, 5-7 June, SISFA & Department of Physics, University of Bari, Jun 2003, Bari (Italy), Italy. ⟨hal-04519689⟩

• Pré-publication, Document de travail

Molecular rectifying diodes from self-assembly on silicon

Stéphane Lenfant, Christophe Krzeminski, Christophe Delerue, Guy Allan, Dominique Vuillaume

We demonstrate a molecular rectifying junction made from a sequential self-assembly on silicon. The device structure consists of only one conjugated (p) group and an alkyl spacer chain. We obtain rectification ratios up to 37 and threshold voltages for rectification between -0.3V and -0.9V. We show…

2003. ⟨hal-00000385⟩

• Brevet

Composant monolithique electro-optique multisections

F. Mallecot, C. Chaumont, J. Jacquet, A. Leroy, A. Plais, Joseph Harari, Didier Decoster

N° de brevet: FR2832223 (A1). 2003. ⟨hal-00372467⟩