Publications

• Brevet

Procédé de réglage de l'écartement de deux éléments mécaniques d'une structure micromécanique sensiblement plane et résonateur électromécanique correspondant

A. Kaiser, D. Galayko, D. Collard

N° de brevet: FR2832270 (A1). 2003. ⟨hal-00372464⟩

• Communication dans un congrès

Impulsive noise on indoor power lines: characterization and mitigation of its effect on PLC systems

Virginie Degardin, M. Lienard, Pierre Degauque, A. Zeddam, F. Gauthier

Intensive measurements of impulsive noise have been carried out on indoor power lines. From this approach, various types of transients are classified and a stochastic noise model is deduced from the statistical analysis of their main characteristics. A power line communication, based on an OFDM…

2003 IEEE International Symposium on Electromagnetic Compatibility, 2003. EMC '03., May 2003, Istanbul, Turkey. pp.166-169 Vol.1, ⟨10.1109/ICSMC2.2003.1428221⟩. ⟨hal-03514977⟩

• Communication dans un congrès

Comparaison des performances d'une antenne Vivaldi et d'un réseau de fentes imprimées à 94GHz

B. D. Nguyen, Claire Migliaccio, Christian Pichot, N. Rolland, K. Vanoverschelde, K. Yamamoto, N. Yonemoto, K. Yamada

13èmes Journées Nationales Microondes (JNM 2003), May 2003, Lille, France. pp.77-78. ⟨hal-00984136⟩

• Article dans une revue

AlGaN/GaN HEMTS: material, processing, and characterization

F. Calle, T. Palacios, E. Monroy, J. Grajal, M. Verdu, Zahia Bougrioua, Ingrid Moerman

The growth of AlGaN/GaN high electron mobility transistor (HEMT) structures on sapphire by metal organic vapor phase epitaxy (MOVPE) is described, with special emphasis on procedures to reduce dislocation density. All the processing steps involved in the fabrication of nitride-based HEMTs have been…

Journal of Materials Science: Materials in Electronics, 2003, 14 (5/7), pp.271-277. ⟨10.1023/A:1023951323307⟩. ⟨hal-02906523⟩

• Article dans une revue

Directional photon transfer between two wires

L. Dobrzynski, Abdellatif Akjouj, Bahram Djafari-Rouhani, Jerome O. Vasseur, Mohamed Bouazaoui, Jean-Pierre Vilcot, Arnaud Beaurain, Stefan Mc Murtry

The directional transfer of a single photon from one wire to another, leaving all other neighbor states unaffected, is of great importance. We present a simple coupling structure that makes such transfer possible, for any given photon wavelength and linewidth. We give closed-form expressions for…

Physical Review E , 2003, 67 (5), pp.057603/1-4. ⟨10.1103/PhysRevE.67.057603⟩. ⟨hal-03302158⟩

• Communication dans un congrès

Optoelectronic components and integrated circuits including up and down conversion techniques and hybrid integration technology

Didier Decoster, Samuel Dupont, V. Magnin

Microwave optical links can be considered as basic bricks for some emerging system applications such as optically supplied microwave antennas. Emitters, optical switching matrices, high speed photodetectors and specific components for up or down conversion, are generic devices or functions for…

NATO RTO, Optics Microwave Interactions, TTO-ENP-028, Sep 2002, Budapest (Hungary), Hungary. ⟨hal-00149658⟩

• Article dans une revue

Comparison of fully distributed and periodically loaded nonlinear transmission lines

J.-M. Duchamp, Philippe Ferrari, M. Fernandez, A. Jrad, X. Melique, S. Arscott, D. Lippens, R.G. Harrison

IEEE Transactions on Microwave Theory and Techniques, 2003, 51 (4), pp.1105-1116. ⟨10.1109/TMTT.2003.809621⟩. ⟨hal-02347830⟩

• Article dans une revue

Observation of large photonic band gaps and defect modes in one-dimensional networked waveguides

Jerome O. Vasseur, A Mir, Abdellatif Akjouj, J Vasseur, Bahram Djafari-Rouhani, N Fettouhi, E Boudouti, L. Dobrzynski, J Zemmouri

Journal of Physics: Condensed Matter, 2003, 15 (10), pp.1593-1598. ⟨10.1088/0953-8984/15/10/308⟩. ⟨hal-03302156⟩

• Article dans une revue

Evidence of an impurity band at an n-GaN/sapphire interface

C. Mavroidis, J.J. Harris, R.B. Jackman, Z. Bougrioua, I. Moerman

We report on temperature-dependent differential Hall-effect and resistivity measurements, between 10 and 300 K, on a silicon-doped GaN epitaxial layer grown by metalorganic chemical vapor deposition on a sapphire substrate. Reactive ion etching has been used to enable Hall measurements to be taken…

Diamond and Related Materials, 2003, 12 (3-7), pp.1127-1132. ⟨10.1016/S0925-9635(02)00395-3⟩. ⟨hal-02906520⟩

• Article dans une revue

Statistical Estimation of Fast Varying Channels for Cellular Mobile Telecommunications Systems

Iyad Dayoub, M. Zaizouni, Atika Rivenq, Jean-Michel Rouvaen

The time variant environment in fast channels severely impacts on the performances of classical equal-ization techniques. A method is proposed here to circumvent this problem, particularly in the severe channel with fast behaviour. To improve the Bit Error Rate (BER) at the receiver, a new approach…

Wireless Personal Communications, 2003, 24 (4), pp.527-536. ⟨10.1023/A:1023275221420⟩. ⟨hal-03508978⟩