Publications
Affichage de 14021 à 14030 sur 16175
Non-linear modeling of the kink effect in deep sub-micron SOI MOSFET
A. Siligaris, Gilles Dambrine, Francois Danneville
2004, pp.47-50. ⟨hal-00133900⟩
InAlAs-InGaAs double-gate HEMTs on transferred substrate
Nicolas Wichmann, I. Duszynski, X. Wallart, S. Bollaert, A. Cappy
IEEE Electron Device Letters, 2004, 25, pp.354-356. ⟨hal-00133868⟩
Noise in devices and circuits II – Proceedings of SPIE Vol. 5470
Francois Danneville, F. Bonani, J. Deen, M. Levinshtein
SPIE – The International Society for Optical Engineering, Bellingham, WA, USA, 585 p., 2004. ⟨hal-00131720⟩
High indium content pseudomorphic InGaAs layers for high mobility heterostructures on InP(001)
X. Wallart, B. Pinsard, F. Mollot
Proceedings of the 13th International Conference on Molecular Beam Epitaxy, MBE XIII, 2004, Edinburgh, Scotland, United Kingdom. ⟨hal-00142074⟩
Advanced and nanometric MOSFET architecture, multiple gate devices and Pi gates
J. Penaud, F. Fruleux, Emmanuel Dubois, G. Larrieu
MIGAS International Summer School on Advanced Microelectronics, MIGAS'04, 2004, Autrans, France. ⟨hal-00140995⟩
RF and noise properties of SOI MOSFETs, including the influence of a direct tunneling gate current
Francois Danneville, G. Pailloncy, Gilles Dambrine, B. Iniguez
2004, pp.103-110. ⟨hal-00154886⟩
Modélisation grand signal de MOSFETs en hyperfréquences : application à l'étude des non-linéarités des filières SOI
A. Siligaris
2004. ⟨hal-00162763⟩
Hot carrier aging degradation phenomena in GaN based MESFETs
F. Rampazzo, G. Pierobon, D. Pacetta, Christophe Gaquière, D. Theron, B. Boudart, G. Meneghesso, E. Zanoni
Microelectronics Reliability, 2004, 44, pp.1375-1380. ⟨hal-00154890⟩
Multiplicateurs de fréquence et métamatériaux en technologie fin line
T. Decoopman
2004. ⟨hal-00162760⟩
Versatile bondpad report process for non-planar compound semiconductor devices
S. Garidel, Jean-Pierre Vilcot, M. Zaknoune, P. Tilmant
Microelectronic Engineering, 2004, 71, pp.358-362. ⟨hal-00162776⟩