Publications

• Article dans une revue

Evidence of an impurity band at an n-GaN/sapphire interface

C. Mavroidis, J.J. Harris, R.B. Jackman, Z. Bougrioua, I. Moerman

We report on temperature-dependent differential Hall-effect and resistivity measurements, between 10 and 300 K, on a silicon-doped GaN epitaxial layer grown by metalorganic chemical vapor deposition on a sapphire substrate. Reactive ion etching has been used to enable Hall measurements to be taken…

Diamond and Related Materials, 2003, 12 (3-7), pp.1127-1132. ⟨10.1016/S0925-9635(02)00395-3⟩. ⟨hal-02906520⟩

• Article dans une revue

Statistical Estimation of Fast Varying Channels for Cellular Mobile Telecommunications Systems

Iyad Dayoub, M. Zaizouni, Atika Rivenq, Jean-Michel Rouvaen

The time variant environment in fast channels severely impacts on the performances of classical equal-ization techniques. A method is proposed here to circumvent this problem, particularly in the severe channel with fast behaviour. To improve the Bit Error Rate (BER) at the receiver, a new approach…

Wireless Personal Communications, 2003, 24 (4), pp.527-536. ⟨10.1023/A:1023275221420⟩. ⟨hal-03508978⟩

• Article dans une revue

Adsorption behavior of conjugated {C}3-oligomers on Si(100) and HOPG surfaces

Gauthier Mahieu, B. Grandidier, Didier Stiévenard, Christophe Krzeminski, Christophe Delerue, C. Martineau, Jean Roncali

A pi-conjugated {C}3h-oligomer involving three dithienylethylene branches bridged at the meta positions of a central benzenic core has been synthesized and deposited either on the Si(100) surface or on the HOPG surface. On the silicon surface, scanning tunneling microscopy allows the observation of…

Langmuir, 2003, 19 (8), pp.3350-3356. ⟨10.1021/la026907n⟩. ⟨hal-00688536⟩

• Article dans une revue

Dimensionality-dependent self energy corrections and exchange-correlation potential in semiconductor nanostructures

Christophe Delerue, Guy Allan, Michel Lannoo

We study the quasiparticle gap in semiconductor nanostructures versus dimensionality and compare it to the value obtained in the local density approximation. We first develop general arguments based on the GW approach which we then substantiate numerically by a tight binding version of this theory…

Physical Review Letters, 2003, 90, pp.076803/1-4. ⟨10.1103/PhysRevLett.90.076803⟩. ⟨hal-00146609⟩

• Communication dans un congrès

Microelectromechanical variable-bandwidth if frequency filters with tunable electrostatical coupling spring

Dimitri Galayko, Andreas Kaiser, Lionel Buchaillot, Dominique Collard, Chantal Combi

This paper describes the theory, design and test of a novel architecture of highly-selective micromechanical filters employing electrostatically coupled resonators with floating or biased coupling electrodes. This original method avoids the use of mechanical coupling springs thus extending the…

Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE The Sixteenth Annual International Conference on, Jan 2003, Kyoto, Japan. ⟨10.1109/MEMSYS.2003.1189709⟩. ⟨hal-01522205⟩

• Communication dans un congrès

Nonlinear electron transport in InGaAs/InAlaS ballistic devices

Benoit Hackens, L. Gence, Sébastien Faniel, Cédric Gustin, Hervé Boutry, Lukasz Bednarz, Isabelle Huynen, Vincent Bayot, X. Wallart, A. Cappy, Javier Mateos, Tomás González

Trends in NanoTechnology, TNT 2003, Sep 2003, Salamanca, Spain. ⟨hal-00146041⟩

• Communication dans un congrès

Fabrication of nano-ballistic devices using high resolution process

Emmanuelle Pichonat, Jean-Sebastien Galloo, Yannick Roelens, S. Bollaert, X. Wallart, A. Cappy, Javier Mateos, Tomás González, Hervé Boutry, Vincent Bayot, Lukasz Bednarz

Trends in NanoTechnology, TNT 2003, Sep 2003, Salamanca, Spain. ⟨hal-00146012⟩

• Article dans une revue

Lead Zirconate Titanate (PZT) Films Deposited by a Hydrothermal Method

Sébastien Euphrasie, Sylvie Daviero-Minaud, Philippe Pernod

Solid State Sciences, 2003, 5 (11-12), pp.1499-1504. ⟨hal-00258427⟩

• Article dans une revue

Accurate modelling of large angle tilt (LATID) and pure vertical implantations : application to the simulation of n- and p-LDMOS backgates

Evelyne Lampin, Emmanuel Dubois, H. Xu, S. Bardy, F. Murray

The lateral and vertical extensions of the backgate of complementary laterally diffused metal oxide semiconductor (LDMOS) are simulated. The importance of channeling for a large-angle tilt implantation and a purely vertical (0°) implantation are studied with the atomistic simulator Crystal-TRIM.…

IEEE Transactions on Electron Devices, 2003, 50 (5), pp.1401-1404. ⟨10.1109/TED.2003.813464⟩. ⟨hal-00146392⟩

• Article dans une revue

Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs

Yvon Cordier, P. Lorenzini, Jean Michel Chauveau, D. Ferré, Ydir Androussi, J. Di Persio, Dominique Vignaud, Jean-Louis Codron

In this work, we investigate the influence of the growth temperature and the arsenic flux on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs with inverse step based InAlAs buffer layers. We show besides the temperature, how the composition modulations make the arsenic flux a critical…

Journal of Crystal Growth, 2003, 251, pp.822. ⟨10.1016/S0022-0248(02)02316-3⟩. ⟨hal-00018494⟩