Publications

• Communication dans un congrès

Current instabilities and deep level investigation on AlGaN/GaN HEMT's on silicon and sapphire substrates

N. Sghaier, N. Yacoubi, J.M. Bluet, A. Souifi, G. Guillot, Christophe Gaquière, Jean-Claude de Jaeger

2004, pp.672-675. ⟨hal-00154889⟩

• Communication dans un congrès

Determination by indentation method of sputtered PZT films mechanical parameters for Si-MEMS applications

Patrick Delobelle, Olivier Guillon, E. Fribourg-Blanc, Caroline Soyer, Denis Remiens, Eric Cattan

2004. ⟨hal-00020029⟩

• Communication dans un congrès

Central vision loss : wearable assistive system

Jean-Claude Kastelik, Michel Pommeray, V. Pardessus, C. Gaudefroy, V. Dedès

Conference and Workshop on Assistive Technologies for Vision and Hearing Impairment, CVHI 2004, 2004, Granada, Spain. ⟨hal-00147748⟩

• Communication dans un congrès

Transmission Electron Microscopy analysis of MOSFET structures

A. Laszcz, J. Katcki, J. Ratajczak, Emmanuel Dubois, G. Larrieu, X. Wallart, Xing Tang

School on Materials Science and Electron Microscopy, Emerging Microscopy for Advanced Materials Development-Imaging and Spectroscopy on Atomic Scale, 2004, Berlin, Germany. ⟨hal-00140997⟩

• Article dans une revue

Characterisation of SiO2 transferred GaAs electroabsorption modulator for 850 nm radio over fibre systems based on multimode fibre

C. Lethien, Jean-Pierre Vilcot, Jean-Francois Lampin, D. Vignaud, P. Miska, Didier Decoster, F. Mollot

Electronics Letters, 2004, 40, pp.169-170. ⟨hal-00141173⟩

• Article dans une revue

Localization and delocalization of charges injected in DNA

T. Heim, Thierry Melin, D. Deresmes, D. Vuillaume

Applied Physics Letters, 2004, 85, pp.2637-2639. ⟨hal-00140732⟩

• Article dans une revue

Characterization and fabrication of InGaAsP/InP deep-etched micro-waveguides

Arnaud Beaurain, Samuel Dupont, Hongwu Li, Jean-Pierre Vilcot, Christiane Legrand, Joseph Harari, Monique Constant, Didier Decoster

InGaAsP/InP micro-waveguides are fabricated by a deep (>3 μm) Reactive Ion Etching. The devices losses are measured by the Fabry–Perot technique for guide width contained between 10 μm and 0.5 μm. The measured losses range from 2 dB/mm to 14 dB/mm.

Microwave and Optical Technology Letters, 2004, 40 (3), pp.216-218. ⟨10.1002/mop.11333⟩. ⟨hal-00141171⟩

• Article dans une revue

True Young modulus of Pb(Zr,Ti)O3 films measured by nanoindentation

P. Delobelle, O. Guillon, E. Fribourg-Blanc, Caroline Soyer, Eric Cattan, Denis Remiens

Applied Physics Letters, 2004, 85, pp.5185-5187. ⟨hal-00141178⟩

• Communication dans un congrès

Démultiplexeur nanométriques à plasmons

Maxime Beaugeois, L. Dobrzynski, Abdellatif Akjouj, Bahram Djafari-Rouhani, Jerome O. Vasseur, Mohamed Bouazaoui, Jean-Pierre Vilcot, J.P. Vigneron

9èmes Journées de la Matière Condensée, JMC9, 2004, Nancy, France. ⟨hal-00141208⟩

• Communication dans un congrès

Guides nanophotoniques III-V/polymère

D. Lauvernier, Joseph Harari, Jean-Pierre Vilcot, Didier Decoster

10èmes Journées Nationales Microélectronique Optoélectronique, JNMO 2004, 2004, La Grande Motte, France. ⟨hal-00141204⟩