Publications

Type of document

Keywords

Author

Of

At

Affichage de 14121 à 14130 sur 16255

Communication dans un congrès

Effect of objects into cavities on the field distribution : experimental analysis

S. Baranowski, L. Kone, B. Demoulin

2004, pp.739-743. ⟨hal-00142336⟩

Communication dans un congrès

Millimeter ultra wide band positioning system

Michael Bocquet, Christophe Loyez, A. Benlarbi-Delai

2004, pp.265-268. ⟨hal-00142284⟩

Communication dans un congrès

Performances of AlGaN/GaN HEMTs in planar technology

M. Werquin, N. Vellas, Y. Guhel, D. Ducatteau, B. Boudart, J.C. Pesant, Z. Bougrioua, Marie Germain, Jean-Claude de Jaeger, Christophe Gaquière

2004, pp.303-306. ⟨hal-00142305⟩

Communication dans un congrès

Fabrication and creep behavior of SiCN(O) nanocomposites

Mohamed Amara, R. Dez, Sylvie Foucaud, D. Bahloul-Hourlier, P. Goursat, Nathalie Herlin-Boime

4th International Symposium on Nitrides, 2004, Belgium. pp.281-285. ⟨hal-00248025⟩

Communication dans un congrès

LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide. Application to HEMT's devices

Marie-Antoinette Di Forte-Poisson, M. Magis, Maurice Tordjman, Raphaël Aubry, Nicolas Sarazin, M. Peschang, Erwan Morvan, Sylvain Laurent Delage, J. Di Persio, Raymond Quéré, B. Grimbert, Virginie Hoel, E. Delos, Damien Ducatteau, Christophe Gaquière

This paper reports on the LP-MOCVD growth optimisation of GaAlN/GaN heterostructures grown on Silicon Carbide substrates for HEMT applications, and on the first device performances obtained with these structures. The critical impact of some growth parameters on the physical properties of the GaAlN/…

The Twelfth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XII), May 2004, Lahina, United States. pp.107-112, ⟨10.1557/PROC-798-Y10.26⟩. ⟨hal-00162796⟩