Publications

• COMM

LIMMS : France-Japan initiative for collaboration on micro and nano-technologies

V. Senez, H. Toshiyoshi, T. Fujii, D. Collard, H. Fujita

Nanotechnology Conference and Trade Show, NANOTECH 03, 2003, Chiba, Japan. ⟨hal-00146463⟩

• OTHER

Etude de fonctions passives à base de nanostructures photoniques

Arnaud Beaurain

2003. ⟨hal-00146472⟩

• ART

PMNT films for integrated capacitors

E. Fribourg-Blanc, Eric Cattan, Denis Remiens, E. Defaÿ

Solid-State Electronics, 2003, 47, pp.1631-1635. ⟨hal-00146475⟩

• COMM

Nouvel applicateur planaire pour thermothérapie microonde

Julien Carlier, V. Thomy, J.C. Camart, Luc Dubois, J. Pribetich

13èmes Journées Nationales Microondes, JNM 2003, 2003, Lille, France. pp.122-124. ⟨hal-00146067⟩

• OTHER

Imagerie et détection ultrasonores par corrélation

B. El Khaldi

2003. ⟨hal-00162743⟩

• ART

Wave-mechanical calculations of leakage current through stacked dielectrics for nanotransistor Metal-Oxide-Semiconductor design

M. Le Roy, Eric Lheurette, O. Vanbésien, D. Lippens

Journal of Applied Physics, 2003, 93, pp.2966-2971. ⟨hal-00146086⟩

• ART

Formation of Pt-based silicide contacts : kinetics, stochiometry and current drive capabilities

Guilhem Larrieu, Emmanuel Dubois, X. Wallart, Xavier Baie, J. Katcki

A detailed analysis of the formation of Pt2Si and PtSi silicides is proposed, based on x-ray photoelectron spectroscopy ~XPS!, transmission electron microscopy ~TEM!, and electrical characterizations. Published kinetics of the Pt2Si and PtSi transformations under ultrahigh vacuum condition are…

Journal of Applied Physics, 2003, 94 (12), pp.7801-7810. ⟨10.1063/1.1605817⟩. ⟨hal-00146394⟩

• ART

Grazing incidence diffraction anomalous fine structure of self-assembled semiconductor nanostructures

S. Grenier, A. Letoublon, M.G. Proeitti, Hubert Renevier, L. Gonzalez, J.M. Garcia, C. Priester, J. Garcia

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2003, 200, pp.24-33. ⟨hal-00146613⟩

• ART

Accurate modelling of large angle tilt (LATID) and pure vertical implantations : application to the simulation of n- and p-LDMOS backgates

Evelyne Lampin, Emmanuel Dubois, H. Xu, S. Bardy, F. Murray

The lateral and vertical extensions of the backgate of complementary laterally diffused metal oxide semiconductor (LDMOS) are simulated. The importance of channeling for a large-angle tilt implantation and a purely vertical (0°) implantation are studied with the atomistic simulator Crystal-TRIM.…

IEEE Transactions on Electron Devices, 2003, 50 (5), pp.1401-1404. ⟨10.1109/TED.2003.813464⟩. ⟨hal-00146392⟩

• COMM

IEMN : a center of the french network for basic research in Micro@Nano technology

A. Cappy

Trends in NanoTechnology, TNT 2003, 2003, Salamanca, Spain. ⟨hal-00146046⟩