Publications

• Communication dans un congrès

Micro-electromechanical variable-bandwidth IF frequency filters with tunable electrostatical coupling spring

D. Galayko, A. Kaiser, L. Buchaillot, D. Collard, C. Combi

2003, pp.153-156. ⟨hal-00146404⟩

• Article dans une revue

Conduction band offset in the AlxGayIn1–x–yP/Ga0.52In0.48P system as studied by luminescence spectroscopy

D. Vignaud, F. Mollot

The conducton band offset (CBO) in the AlxGayIn1-x-yP/Ga0.52In0.4 8P heterostructures was measured and analyzed. The methods employed for the measurement included photoluminescence and photoluminescence excitation spectroscopy. The parameters involved in the model solid theory were masured…

Journal of Applied Physics, 2003, 93 (1), pp.384. ⟨10.1063/1.1528309⟩. ⟨hal-00018496⟩

• Article dans une revue

Feedback of MEMS reliability study on the design stage : a step toward reliability aided design (RAD)

L. Buchaillot

Microelectronics Reliability, 2003, 43, pp.1919-1928. ⟨hal-00146437⟩

• Article dans une revue

Strain determination in silicon microstructures by combined TEM/CBED, process simulation and micro-Raman spectroscopy

V. Senez, A. Armigliato, I. de Wolf, G. Carnevale, R. Balboni, S. Frabboni, A. Benedetti

Test structures consisting of shallow trench isolation (STI) structures are fabricated using advanced silicon (Si) technology. Different process parameters and geometrical features are implemented to investigate the residual mechanical stress in the structures. A technology computer aided design…

Journal of Applied Physics, 2003, 94 (9), pp.5574-5583. ⟨10.1063/1.1611287⟩. ⟨hal-00146408⟩

• Article dans une revue

Lead Zirconate Titanate (PZT) Films Deposited by a Hydrothermal Method

Sébastien Euphrasie, Sylvie Daviero-Minaud, Philippe Pernod

Solid State Sciences, 2003, 5 (11-12), pp.1499-1504. ⟨hal-00258427⟩

• Article dans une revue

Wide and narrow-band bandpass coplanar filters in the W-frequency band

Eric Rius, Gaëtan Prigent, H. Happy, Gilles Dambrine, Samuel Boret, A. Cappy

This paper deals with the design of passive coplanar devices in the W-frequency band. As long as coplanar transmission lines are correctly dimensioned, analytical models based on quasi-TEM approximation can be used. Such models are associated with a correct definition of the reference planes at the…

IEEE Transactions on Microwave Theory and Techniques, 2003, 51 (3), pp.784-791. ⟨10.1109/TMTT.2003.808586⟩. ⟨hal-00145985⟩

• Article dans une revue

Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs

Yvon Cordier, P. Lorenzini, Jean Michel Chauveau, D. Ferré, Ydir Androussi, J. Di Persio, Dominique Vignaud, Jean-Louis Codron

In this work, we investigate the influence of the growth temperature and the arsenic flux on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs with inverse step based InAlAs buffer layers. We show besides the temperature, how the composition modulations make the arsenic flux a critical…

Journal of Crystal Growth, 2003, 251, pp.822. ⟨10.1016/S0022-0248(02)02316-3⟩. ⟨hal-00018494⟩

• Article dans une revue

Terahertz frequency generation : electronic and photonic approach

D. Lippens

La Revue de l'électricité et de l'électronique, 2003, 1, pp.25-31. ⟨hal-00162726⟩

• Communication dans un congrès

Low-frequency drain noise in AlGaN/GaN HEMTs on Si substrate

N. Malbert, N. Labat, A. Curutchet, A. Touboul, Christophe Gaquière, A. Minko

2003, pp.342-349. ⟨hal-00162738⟩

• Article dans une revue

Accurate modelling of large angle tilt (LATID) and pure vertical implantations : application to the simulation of n- and p-LDMOS backgates

Evelyne Lampin, Emmanuel Dubois, H. Xu, S. Bardy, F. Murray

The lateral and vertical extensions of the backgate of complementary laterally diffused metal oxide semiconductor (LDMOS) are simulated. The importance of channeling for a large-angle tilt implantation and a purely vertical (0°) implantation are studied with the atomistic simulator Crystal-TRIM.…

IEEE Transactions on Electron Devices, 2003, 50 (5), pp.1401-1404. ⟨10.1109/TED.2003.813464⟩. ⟨hal-00146392⟩