Publications
Affichage de 14251 à 14260 sur 16064
Protéomique intégrée
S. Arscott, S. Le Gac, C. Druon, P. Tabourier, C. Rolando
Journées Nationales du Réseau Micro et Nano Technologies, 2003, Lille, France. ⟨hal-00146396⟩
Coupling of atom-by-atom calculations of extended defects with B kick-out equations : application to the simulation of boron TED
E. Lampin, Fuccio Cristiano, Y. Lamrani, Bernard Colombeau
European Materials Research Society Spring Meeting, 2003, Strasbourg, France. ⟨hal-00146423⟩
A novel micromachined 2D nanoelectrospray emitter
S. Arscott, S. Le Gac, C. Druon, P. Tabourier, C. Rolando
Electronics Letters, 2003, 39, pp.1702-1703. ⟨hal-00146381⟩
Channel thickness dependence of breakdown dynamic in InP-based lattice-matched HEMTs
A. Sleiman, A. Di Carlo, P. Lugli, G. Meneghesso, E. Zanoni, Jean-Luc Thobel
IEEE Transactions on Electron Devices, 2003, 50, pp.2009-2014. ⟨hal-00146070⟩
Characterization of MIS tunnel junctions by IETS
G. Salace, C. Petit, D. Vuillaume
203rd Meeting of the Electrochemical Society, 2003, Paris, France. ⟨hal-00146170⟩
Low frequency emission by non-linear interaction of phase conjugate ultrasound waves
Y.U. Pylnov, Philippe Pernod, Vladimir Preobrazhensky
Acta Acustica united with Acustica, 2003, 89, pp.942-947. ⟨hal-00146130⟩
Transport électronique dans les systèmes moléculaires auto-assemblés, récents développements en électronique moléculaire
D. Vuillaume
10èmes Journées des Polymères Conducteurs, 2003, Dourdan, France. ⟨hal-00146384⟩
Compensation mechanisms in low-temperature-grown Ga1-xMnxAs investigated by scanning tunneling spectroscopy
Gauthier Mahieu, B. Grandidier, Jean-Philippe Nys, Guy Allan, Didier Stiévenard, Philipp Ebert, Yuji Higo, M. Tanaka
Applied Physics Letters, 2003, 82, pp.712-714. ⟨10.1063/1.1522821⟩. ⟨hal-00146589⟩
Self-consistent tight-binding electronic structure of GaN/AlN pyramidal quantum dots
Vivek Ranjan, Christophe Delerue, Guy Allan, Catherine Priester
American Physical Society March Meeting, 2003, Austin, TX, United States. ⟨hal-00146640⟩
Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon (111) substrate
N. Vellas, Christophe Gaquière, A. Minko, Virginie Hoel, Jean-Claude de Jaeger, Y. Cordier, F. Semond
IEEE Microwave and Wireless Components Letters, 2003, 13, pp.255-257. ⟨hal-00146662⟩