Publications

• Communication dans un congrès

Self-assembled molecular rectifying diodes

S. Lenfant, D. Vuillaume, Christophe Krzeminski, C. Delerue

Materials Research Society Spring Meeting, 2003, San Francisco, CA, United States. ⟨hal-00146173⟩

• Communication dans un congrès

Coupling of atom-by-atom calculations of extended defects with B kick-out equations : application to the simulation of boron TED

E. Lampin, Fuccio Cristiano, Y. Lamrani, Bernard Colombeau

European Materials Research Society Spring Meeting, 2003, Strasbourg, France. ⟨hal-00146423⟩

• Communication dans un congrès

Transmission electron microscopy of iridium silicide contacts for advanced MOSFET structures with Schottky source and drain

A. Laszcz, J. Katcki, J. Ratajczak, G. Larrieu, Emmanuel Dubois, X. Wallart

European Materials Research Society Fall Meeting, 2003, Warsaw, Poland. ⟨hal-00146424⟩

• Communication dans un congrès

Polynomial method applied to acoustic waves in inhomogeneous cylinders

L. Elmaimouni, Jean-Etienne Lefebvre, Tadeusz Gryba, V. Zhang

2003, pp.1400-1403. ⟨hal-00145983⟩

• Communication dans un congrès

Impact of down scaling on high frequency noise performance of bulk and SOI MOSFETs

Gilles Dambrine, C. Raynaud, M. Vanmackelberg, Francois Danneville, G. Pailloncy, Sylvie Lepilliet, J.P. Raskin

SPIE Fluctuations and Noise Symposium, Noise in Devices and Circuits, 2003, Sante Fe, NM, United States. ⟨hal-00146001⟩

• Article dans une revue

What are the limiting parameters of deep-submicron MOSFETs for high frequency applications ?

Gilles Dambrine, C. Raynaud, D. Lederer, M. Dehan, O. Rozeaux, M. Vanmackelberg, Francois Danneville, Sylvie Lepilliet, J.P. Raskin

IEEE Electron Device Letters, 2003, 24, pp.189-191. ⟨hal-00145984⟩

• Communication dans un congrès

Self-consistent tight-binding electronic structure of GaN/AlN pyramidal quantum dots

Vivek Ranjan, Christophe Delerue, Guy Allan, Catherine Priester

We have employed a second nearest neighbour sp3 tight-binding scheme to study a pyramidal quantum dot of wurtzite GaN embedded in AlN. The largest QD, we have studied, consists of approximately forty thousand atoms. This corresponds to the actual size reported in the experiments. We have computed…

American Physical Society March Meeting, 2003, Austin, TX, United States. ⟨hal-00146640⟩

• Article dans une revue

Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon (111) substrate

N. Vellas, Christophe Gaquière, A. Minko, Virginie Hoel, Jean-Claude de Jaeger, Y. Cordier, F. Semond

IEEE Microwave and Wireless Components Letters, 2003, 13, pp.255-257. ⟨hal-00146662⟩

• Communication dans un congrès

Experimental and theoretical charge transport studies in self-assembled molecular rectifying diodes on silicon

Christophe Delerue, Stéphane Lenfant, Christophe Krzeminski, Guy Allan, Dominique Vuillaume

French-USA Conference on Molecular-scale Electronics, 2003, Paris, France. ⟨hal-00146177⟩

• Communication dans un congrès

Characterization of MIS tunnel junctions by IETS

G. Salace, C. Petit, D. Vuillaume

203rd Meeting of the Electrochemical Society, 2003, Paris, France. ⟨hal-00146170⟩